Abstract: A light-emitting device includes: an epitaxial structure having a first surface and a second surface opposite to the first surface, and including a first type semiconductor layered unit that includes a first type window layer and a first type ohmic contact layer disposed at one side of the first type window layer; an active layer; and a second type semiconductor layered unit. The first type window layer is disposed between the first type ohmic contact layer and the active layer. The first type ohmic contact layer contains a material represented by Alx1Gay1InP, where 0?x1?1, 0?y1?1. The first type window layer contains a material represented by Alx2Gay2InP, where 0<x2?1, 0?y2?1. The first type ohmic contact layer has an Al content lower than an Al content of the first type window layer. A light-emitting apparatus that includes a light-emitting device according to the disclosure is also disclosed.

Abstract: A gas sensing device for detecting a to-be-detected substance in a respiratory gas exhaled by a user includes a housing permitting entrance of the respiratory gas, and a sensing module disposed in the housing. The sensing module includes a light chamber permitting the respiratory gas to pass therethrough, a light source unit emitting light into the light chamber, first and second light sensing units outputting respectively first and second detected signals indicating first and second detected intensities respectively of first and second portions of the light whose wavelengths fall within first and second wavelength ranges, respectively, and a processing unit electrically connected to the first and second light sensing units and determining, based on the first and second detected signals, that the to-be-detected substance exists in the respiratory gas when a difference occurs in each of the first and second detected intensities over time.

Abstract: A flip-chip light-emitting device includes a transparent substrate, an epitaxial structure, a transparent dielectric layer, a plurality of first contact electrodes, multiple second contact electrodes, a metallic reflection layer, a first insulating layer, and an electrode pad region. The epitaxial structure is formed on the transparent substrate, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first and second contact electrodes are embedded in the transparent dielectric layer, and respectively connected to the first and second type semiconductor layers. The second and first contact electrodes are arranged in an array. The second contact electrodes are disposed in a region perpendicularly below the first pad and are distributed along a circular ring that is concentric with one of the first contact electrodes. A light emitting module includes a circuit board, and the flip-chip light emitting device is mounted on the circuit board.

Abstract: Embodiments described herein provide for an RIS-aided determination of the location of mobile device that enables the signal reflected by the RIS to be identified through channel estimation. More specifically, an Orthogonal Cover Code (OCC)-based approach may be taken where the RIS is configured to use different weights to reflect different reference signals, enabling a receiving device to identify the reflected signal. This can be utilized on signals used for positioning of the mobile device. Additionally or alternatively, this can be used for positioning of the RIS.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes well layers and barrier layers that are alternately stacked. The active layer has an upper surface that is adjacent to the second semiconductor layer, and a lower surface that is opposite to the upper surface. The first semiconductor layer is doped with an n-type dopant, which has a first concentration of 5E17/cm3 at a first point in the first semiconductor layer. The first point of the first semiconductor layer and the lower surface of the active layer have a first distance therebetween. The first distance ranges from 150 nm to 500 nm.

Abstract: A light-emitting device includes: an epitaxial structure that has a first surface and a second surface; a first metal electrode that is disposed on the first surface, and that includes a main electrode and extending electrodes; current transmission blocks that are disposed on the second surface, and each having an electrode-facing sidewall and a non-electrode-facing sidewall; and a current blocking layer that is disposed in spaces among the current transmission blocks.

Abstract: A floating point pre-alignment structure for computing-in-memory applications includes a time domain exponent computing block and an input mantissa pre-align block. The time domain exponent computing block is configured to compute a plurality of original input exponents and a plurality of original weight exponents to generate a plurality of flags. Each of the flags is determined by adding one of the original input exponents and one of the original weight exponents. The input mantissa pre-align block is configured to receive a plurality of original input mantissas and shift the original input mantissas according to the flags to generate a plurality of weighted input mantissas, and sparsity of the weighted input mantissas is greater than sparsity of the original input mantissas. Each of the flags has a negative correlation with a sum of the one of the original input exponents and the one of the original weight exponents.

Abstract: Disclosed are systems, apparatuses, processes, and computer-readable media to capture images. A method of processing image data includes determining a first region of interest (ROI) in an image. The first ROI is associated with a first object. The method can include determining one or more image characteristics of the first ROI. The method can further include determining whether to perform an upsampling process on image data in the first ROI based on the one or more image characteristics of the first ROI.

Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

Abstract: The light-emitting device includes a substrate, a light-emitting chip unit formed on the substrate and including multiple chips, an isolation groove extending in a first direction and separating two adjacent ones of the chips, and a bridging structure. The isolation groove is defined by a bottom and two sidewalls and has a first groove section and a second groove section arranged in the first direction. The first groove section has a width in a width direction perpendicular to the first direction that is greater than a width of the second groove section in the width direction. At the first groove section, one of the sidewalls has a curved portion. The bridging structure is formed on the bottom and the sidewalls, covers the curved portion, and electrically connects the two adjacent ones of the chips.

Abstract: A method of wireless communications by a user equipment (UE) includes communicating with a network based on a machine learning model for wireless communication. The method also includes monitoring a status of the machine learning model for wireless communication. The method further includes reporting the status of the machine learning model for wireless communication using a predetermined resource according to a predetermined format. The method also includes falling back to communicating with a fallback procedure, instead of the machine learning model for wireless communication, to maintain wireless communication with the network in response to the status of the machine learning model indicating a model failure.

Abstract: A light-emitting diode LED driver and a LED driving device including the LED driver are provided. The light-emitting diode LED driver includes a decoding circuit that receives a data signal and decodes the data signal to generate display data used to drive LEDs to emit light and display and a recovered clock signal. Further provided is an encoding circuit that encodes the decoded display data by using the recovered clock signal to generate an encoded data signal, where the data signal is encoded in a first encoding format, and the encoded data signal is encoded in a second encoding format.

Abstract: The present application relates to a wafer transfer module in a semiconductor manufacturing machine, relating to semiconductor integrated circuit manufacturing machines, wherein two sets of transmitter/receivers are provide on sidewalls of the wafer transfer module to monitor the travel position of an elevator, two sets of transmitter/receivers are provide on the sidewalls of the wafer transfer module to monitor the position of a transfer arm, a signal received by the receiver is transmitted to a control system such that the control system determines, according to the travel position of the elevator and the transfer arm position, whether the transfer arm can obtain a to-be-transferred wafer, thereby preventing the problem of a wafer scratch caused by an elevator position deviation or a transfer arm position deviation.

Abstract: A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1?2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1?1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.

Abstract: Methods, systems, and devices for wireless communications are described. In some systems, devices use machine learning (ML) models to support wireless communications. For example, a user equipment (UE) may download ML model information from a network to determine an ML model. The network may additionally configure a status reporting procedure, a fallback procedure, or both for the ML model. In some examples, based on a configuration, the UE may transmit a status report to a base station according to a reporting periodicity, a UE-based trigger, a network-based trigger, or some combination thereof. Additionally or alternatively, the UE may determine to fallback from operating using the ML model to operating in a second mode based on a fallback trigger. In some examples, to restore operating using a downloaded ML model, the UE may download an updated ML model or receive iterative updates to a previously downloaded ML model.

Abstract: An object processing method includes: displaying a first operation interface in response to triggering a first operation control of a first stage of a target object, the first operation interface including at least one first operation item; displaying a content input interface in response to completing an operation for the at least one first operation item, the content input interface including at least one input item; in response to completion of content input for the at least one input item, determining a second target value and generating a second operation control corresponding to a second stage of the target object; displaying a second operation interface in response to triggering the second operation control, the second operation interface including at least one second operation item; and updating the state of the target object to a completed state in response to completing an operation for the second operation item.

Abstract: A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.

Abstract: A configuration for reporting OOD samples for neural network optimization. The apparatus receives, from a base station, a configuration to report an OOD dataset for a machine learning model. The apparatus detects an occurrence of one or more OOD events. The apparatus reports the OOD dataset comprising the one or more OOD events based on the configuration to report OOD dataset. The apparatus receives, from the base station, an update to the machine learning model. The OOD dataset may comprise raw data related to the one or more OOD events, or may comprise extracted latent data corresponding to features of raw data related to the one or more OOD events.

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.