Abstract: A clothes treating apparatus including a housing; a tub inside the housing; a drum configured to be rotated inside the tub; a spin-drying shaft connected to the drum; a motor assembly including a rotor configured to be rotated; a coupler: a first element; and a second element inside the coupler, wherein the coupler is positionable in a first position in which the coupler is coupled to the spin-drying shaft and the rotor, the coupler is positionable in a second position in which the coupler is coupled to the spin-drying shaft and disengaged from the rotor, and with the coupler being positioned in the second position, the first element and the second element are configured to interact to move the second element away from the first element and thereby move the coupler from the second position to the first position.

Abstract: A washing machine includes a tub, a drum, a pulsator, a motor assembly, including a rotor, to supply a driving force, a reduction gear module couplable to the rotor of the motor assembly so that a portion of the reduction gear module is rotatable at an angular velocity less than an angular velocity at which the rotor is rotated, a washing shaft couplable to the pulsator and the portion of the reduction gear module so that the pulsator is rotatable at an angular velocity less than the angular velocity at which the rotor is rotated, a spin-drying shaft couplable to the drum, and a coupler configured to be couplable to the spin-drying shaft and the rotor so that the spin-drying shaft is rotatable at the angular velocity at which the rotor is rotated, where the coupler includes a coupler body having a receiving space to receive the reduction gear module.

Abstract: Provided is a field effect transistor including a gate electrode layer, an oxide semiconductor layer including gallium (Ga) and at least one metal element selected from indium (In) and zinc (Zn), and a dielectric layer between the gate electrode layer and the oxide semiconductor layer, wherein the oxide semiconductor layer includes a sub semiconductor layer in contact with the dielectric layer and a main semiconductor layer spaced apart from the dielectric layer with the sub semiconductor layer therebetween, the sub semiconductor layer has a first Ga content, and the first Ga content of the sub semiconductor layer is greater than contents of other metal elements included in the sub semiconductor layer and decreases as a distance from an interface of the sub semiconductor layer in contact with the dielectric layer increases.

Abstract: A semiconductor device includes a plurality of bit lines arranged on a substrate and extending in a first horizontal direction, a mold insulating layer arranged on the bit lines and including a plurality of openings extending in a second horizontal direction, respectively, a plurality of channel layers respectively arranged on the bit lines and including a first vertical extension portion, in each opening of the mold insulating layer, a plurality of passivation layers respectively arranged on each vertical extension portion, a gate insulating layer arranged to face each vertical extension portion with each passivation layer therebetween, and a plurality of word lines extending in the second horizontal direction on the gate insulating layer and including first word lines respectively arranged on a first sidewall of each opening of the mold insulating layer and second word lines respectively arranged on a second sidewall of each opening of the mold insulating layer.

Abstract: A method of manufacturing a semiconductor device including providing a first precursor on a substrate to adsorb a first element of the first precursor onto a first region of the substrate, providing a second precursor on the substrate to adsorb a second element of the second precursor onto a second region of the substrate, the second region being different from the first region, and providing a reactant including oxygen on the substrate to form an oxide semiconductor layer including the first element of the first precursor, the second element of the second precursor, and the oxygen of the reactant may be provided.

Abstract: A semiconductor memory device includes a bit line, a channel pattern including a horizontal channel portion on the bit line and a vertical channel portion vertically protruding from the horizontal channel portion, a word line on the horizontal channel portion and on a sidewall of the vertical channel portion, and a gate insulating pattern between the word line and the channel pattern. The channel pattern includes an oxide semiconductor and includes first, second, and third channel layers sequentially stacked. The first to third channel layers include a first metal, and the second channel layer further includes a second metal different from the first metal. At least a portion of the first channel layer contacts the bit line.

Abstract: A semiconductor apparatus includes a bit line extending in a first horizontal direction on a substrate; a channel layer on the bit line, the channel layer extending in a vertical direction, including a first oxide semiconductor material that includes indium, and having a first side wall and a second side wall; a word line on the first side wall of the channel layer; a contact forming region on a top surface and an upper portion of the second side wall of the channel layer, the contact forming region including a second oxide semiconductor material that includes indium and having a resistivity lower than a resistivity of the channel layer; a contact layer on the contact forming region; and a capacitor structure on a top surface of the contact layer.

Abstract: A semiconductor device includes: a substrate; a conductive line extending on the substrate in a first horizontal direction; an isolation insulating layer extending on the substrate and the conductive line in a second horizontal direction intersecting with the first horizontal direction, and defining a channel trench extending through the isolation insulating layer from an upper surface of the isolation insulating layer to a lower surface of the isolation insulating layer; a crystalline oxide semiconductor layer extending along at least a portion of an inner side surface of the channel trench and at least a portion of a bottom surface of the channel trench and coming in contact with the conductive line; and a gate electrode extending on the crystalline oxide semiconductor layer inside the channel trench in the second horizontal direction.

Abstract: A semiconductor device includes a channel layer disposed on a substrate and a gate structure formed on or under the channel layer. The channel layer includes a single-layer oxide semiconductor material, the channel layer includes indium (In), gallium (Ga), and oxygen (O), the channel layer includes a first region, a second region, and a third region, the third region contacting the gate structure, a second region between the first region and the third region, the first region is the closer to the substrate than the second region and the third region, each of the first region and the third region has a concentration of Ga higher than a concentration of In, and the second region has a concentration of In higher than a concentration of Ga.

Abstract: Disclosed is a semiconductor device comprising an oxide semiconductor layer on a substrate and including a first part and a pair of second parts that are spaced apart from each other across the first part, a gate electrode on the first part of the oxide semiconductor layer, and a pair of electrodes on corresponding second parts of the oxide semiconductor layer. A first thickness of the first part of the oxide semiconductor layer is less than a second thickness of each second part of the oxide semiconductor layer. A number of oxygen vacancies in the first part of the oxide semiconductor layer is less than a number of oxygen vacancies in each second part of the oxide semiconductor layer.

Abstract: Provided is a mobile terminal including: a main body; a display unit that is arranged to the main body and to which screen information is output; a sensing unit that senses a gesture that is applied to a region outside of the main body; and a controller that performs a function associated with at least one portion of the screen information that is output to the display unit if a predetermined-type gesture is applied to the region outside of the main body.

Abstract: Provided is a mobile terminal including: a main body; a display unit that is arranged to the main body and to which screen information is output; a sensing unit that senses a gesture that is applied to a region outside of the main body; and a controller that performs a function associated with at least one portion of the screen information that is output to the display unit if a predetermined-type gesture is applied to the region outside of the main body.