Abstract: An example assembly comprises: a main housing; an electric motor disposed in the main housing and comprising a stator fixedly positioned in the main housing, and a rotor positioned within the stator; a hydraulic pump positioned in the main housing and at least partially within the rotor, wherein the hydraulic pump is configured to receive fluid from an inlet port and provide fluid flow to an outlet port, wherein the hydraulic pump comprises a pump shaft rotatably coupled to the rotor of the electric motor; a controller housing coupled to the main housing; and a motor controller comprising one or more circuit boards disposed within the controller housing and configured to generate electric current to drive the electric motor.

Abstract: An example crescent seal assembly comprises: an outer crescent of a gear pump; an inner crescent of the gear pump mating with the outer crescent such that an exterior peripheral surface of the inner crescent interfaces with an interior peripheral surface of the outer crescent, forming: (i) a spring cavity, (ii) a first check valve cavity, and (iii) a second check valve cavity therebetween; a spring disposed in the at least one spring cavity; a first check pin disposed in the first check valve cavity; and a second check pin disposed in the second check valve cavity.

Abstract: An example assembly comprises: a pump cover; a thrust plate configured to interface with the pump cover at a first side of the thrust plate and interface with gears of a gear pump at a second side of the thrust plate; and a seal disposed within a seal cavity formed at an interface between the thrust plate and the pump cover, wherein the seal defines multiple partitions at the interface between the thrust plate and the pump cover and seals each partition of the multiple partitions from other partitions.

Abstract: An example crescent seal assembly comprises: an outer crescent of a gear pump; an inner crescent of the gear pump mating with the outer crescent such that an exterior peripheral surface of the inner crescent interfaces with an interior peripheral surface of the outer crescent, forming: (i) a spring cavity, (ii) a first check valve cavity, and (iii) a second check valve cavity therebetween; a spring disposed in the at least one spring cavity; a first check pin disposed in the first check valve cavity; and a second check pin disposed in the second check valve cavity.

Abstract: An example assembly comprises: a main housing; an electric motor disposed in the main housing and comprising a stator fixedly positioned in the main housing, and a rotor positioned within the stator; a hydraulic pump positioned in the main housing and at least partially within the rotor, wherein the hydraulic pump is configured to receive fluid from an inlet port and provide fluid flow to an outlet port, wherein the hydraulic pump comprises a pump shaft rotatably coupled to the rotor of the electric motor; a controller housing coupled to the main housing; and a motor controller comprising one or more circuit boards disposed within the controller housing and configured to generate electric current to drive the electric motor.

Abstract: The present invention provides a fluid dispensing system and method wherein, after dispensing a fluid, a scavenging pump is used to remove (i.e., scavenge) residual fluid from the dispensing hose without encountering the drawbacks of the prior art. Another advantage is that the scavenging pump can be utilized for priming a main fluid supply used to supply fuel to the dispensing hose.

Abstract: A method of forming an implanted pocket region, to reduce short channel effects (SCE), for narrow channel length, NMOS devices, has been developed. After forming an initial indium pocket region, with an initial indium profile, in the area of a P type semiconductor to be used to accommodate an N type source/drain region, a low temperature anneal procedure is used to activate indium ions in the initial indium pocket region, and to create a final indium pocket region, featuring a final indium profile. The final indium profile remains unchanged after experiencing subsequent high temperature procedures, such as a post-heavily doped, source/drain anneal. The narrow channel length NMOS devices, fabricated using the low temperature anneal procedure described in this invention, resulted in a reduced Vt roll-off phenomena, when compared to counterpart, narrow channel length NMOS, formed without the benefit of the low temperature anneal procedure.

Abstract: An apparatus and a method for oxidizing silicon substrates by either a wet oxidation or a dry oxidation process in the same oxidation chamber are provided. In the apparatus, an additional conduit is provided for evacuating any residual water vapor trapped in a conduit section between an external torch and the oxidation chamber such that residual water vapor does not flow into the oxidation chamber and cause problems for a dry oxidation process subsequently conducted. The present invention novel apparatus therefore allows thin silicon oxide films such as those used in gate oxides to be formed with high quality in the same oxidation chamber. The present invention novel apparatus further allows high quality tri-layered silicon oxide films to be formed in a dry-wet-dry oxidation process for achieving satisfactory deposition rates and high quality oxide films on the substrate.