Patents by Inventor Yu Shao
Yu Shao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11996351Abstract: Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.Type: GrantFiled: June 15, 2022Date of Patent: May 28, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-Tsung Hsiao, Jen Yu Wang, Chung-Jung Wu, Tung-Liang Shao, Chih-Hang Tung
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Patent number: 11996894Abstract: The present disclosure provides a modulation method, apparatus, and system for imaging scanning signal synchronization. The method includes: transmitting control signals, wherein the control signals include a galvanometer driving signal, a laser scanning signal, and a camera exposure signal, the galvanometer driving signal and the camera exposure signal have a same period, and the laser scanning signal enables laser to be emitted for N times within time for enabling positive oscillation of a galvanometer in one period of the galvanometer driving signal; measuring an actual signal waveform of the galvanometer, and obtaining a noise-reduced waveform by filtering and de-noising the actual signal waveform; performing a waveform comparison detection on the noise-reduced waveform and a corresponding control waveform for the galvanometer driving signal to obtain a waveform deviation; and adjusting the control signals based on the waveform deviation and transmitting the adjusted control signals.Type: GrantFiled: January 26, 2022Date of Patent: May 28, 2024Assignee: MECH-MIND ROBOTICS TECHNOLOGIES LTD.Inventors: Ting Wang, Yu Guo, Xiangru Wang, Youshuang Ding, Tianlan Shao
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Publication number: 20240170615Abstract: A flip-chip light-emitting device includes a transparent substrate, an epitaxial structure, a transparent dielectric layer, a plurality of first contact electrodes, multiple second contact electrodes, a metallic reflection layer, a first insulating layer, and an electrode pad region. The epitaxial structure is formed on the transparent substrate, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first and second contact electrodes are embedded in the transparent dielectric layer, and respectively connected to the first and second type semiconductor layers. The second and first contact electrodes are arranged in an array. The second contact electrodes are disposed in a region perpendicularly below the first pad and are distributed along a circular ring that is concentric with one of the first contact electrodes. A light emitting module includes a circuit board, and the flip-chip light emitting device is mounted on the circuit board.Type: ApplicationFiled: November 1, 2023Publication date: May 23, 2024Inventors: Zhiwei WU, Yanyun WANG, Weiping XIONG, Di GAO, Huan-Shao KUO, Yu-Ren PENG
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Publication number: 20240160660Abstract: A data classification method, for classifying unlabeled images into an inlier data set or an outlier data set, include following steps. The unlabeled images are obtained. An assigned inlier image is selected among the unlabeled images. A similarity matrix is computed and the similarity matrix includes first similarity scores of the unlabeled images relative to the assigned inlier image. Each of the unlabeled images is classified into an inlier data set or an outlier data set according to the similarity matrix, so as to generate inlier-outlier predictions of the unlabeled images.Type: ApplicationFiled: November 7, 2023Publication date: May 16, 2024Inventors: Chen-Han TSAI, Yu-Shao PENG
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Publication number: 20240161293Abstract: A multi-label classification method for generating labels annotated on medical images. An initial dataset including medical images and partial input labels is obtained. The partial input labels annotate a labeled part of abnormal features on the medical images. A first multi-label classification model is trained with the initial dataset. Difficulty levels of the medical images in the initial dataset are estimated based on predictions generated by the first multi-label classification model. The initial dataset is divided based on the difficulty levels of the medical images into different subsets. A second multi-label classification model is trained based on subsets with gradually increasing difficulty levels during different curriculum learning rounds. Predicted labels annotated on the medical images are generated about each of the abnormal features based on the second multi-label classification model.Type: ApplicationFiled: November 16, 2023Publication date: May 16, 2024Inventors: Zhe-Ting LIAO, Yu-Shao PENG
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Publication number: 20240162372Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface opposite to the first surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially disposed in such order in a direction from the first surface to the second surface. The active layer includes well layers and barrier layers that are alternately stacked. The active layer has an upper surface that is adjacent to the second semiconductor layer, and a lower surface that is opposite to the upper surface. The first semiconductor layer is doped with an n-type dopant, which has a first concentration of 5E17/cm3 at a first point in the first semiconductor layer. The first point of the first semiconductor layer and the lower surface of the active layer have a first distance therebetween. The first distance ranges from 150 nm to 500 nm.Type: ApplicationFiled: November 9, 2023Publication date: May 16, 2024Inventors: Weihuan LI, Jinghua CHEN, Huan-Shao KUO, Yu-Ren PENG, Dongpo CHEN, Chia-Hung CHANG
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Publication number: 20240153157Abstract: An image processing method and an electronic device are disclosed, and relate to the field of image processing technologies. The image processing method includes: displaying a first interface, and determining, on the first interface, a first file selected by a user; displaying a second interface, and displaying a generated lookup table on the second interface; determining, on the second interface, a target lookup table selected by the user from the lookup table, and performing color adjustment on the first file by using the target lookup table; and displaying a color-adjusted first file. In the image processing method, an image can be processed according to a user requirement, and difficulty of image processing is reduced.Type: ApplicationFiled: April 29, 2022Publication date: May 9, 2024Inventors: Bin XIAO, Yu WANG, Tao SHAO, Congchao ZHU
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Publication number: 20240154068Abstract: A light-emitting device includes: an epitaxial structure that has a first surface and a second surface; a first metal electrode that is disposed on the first surface, and that includes a main electrode and extending electrodes; current transmission blocks that are disposed on the second surface, and each having an electrode-facing sidewall and a non-electrode-facing sidewall; and a current blocking layer that is disposed in spaces among the current transmission blocks.Type: ApplicationFiled: October 23, 2023Publication date: May 9, 2024Inventors: Yuehua JIA, Weihuan LI, Huan-Shao KUO, Yu-Ren PENG, Duxiang WANG
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Publication number: 20240145441Abstract: The light-emitting device includes a substrate, a light-emitting chip unit formed on the substrate and including multiple chips, an isolation groove extending in a first direction and separating two adjacent ones of the chips, and a bridging structure. The isolation groove is defined by a bottom and two sidewalls and has a first groove section and a second groove section arranged in the first direction. The first groove section has a width in a width direction perpendicular to the first direction that is greater than a width of the second groove section in the width direction. At the first groove section, one of the sidewalls has a curved portion. The bridging structure is formed on the bottom and the sidewalls, covers the curved portion, and electrically connects the two adjacent ones of the chips.Type: ApplicationFiled: January 5, 2024Publication date: May 2, 2024Inventors: Weiping XIONG, Zhiwei WU, Di GAO, Huan-Shao KUO, Yu-Ren PENG
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Publication number: 20240136471Abstract: A light-emitting device includes an epitaxial structure having a first surface and a second surface that is opposite to the first surface. The epitaxial structure includes, along a first direction from the first surface to the surface, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer including a capping layer. The capping layer includes at least Ni number of sub-layers arranged in the first direction, where N1?2. Each of the sub-layers of the capping layer contains a material represented by Aly1Ga1-y1InP, where 0<y1?1. The capping layer has an Al content which increases and then remains constant along the first direction. A light-emitting apparatus includes the light-emitting device is also provided.Type: ApplicationFiled: October 19, 2023Publication date: April 25, 2024Inventors: Weihuan LI, JInghua CHEN, Yu-Ren PENG, Huan-Shao KUO, Chia-Hung CHANG
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Publication number: 20240136251Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.Type: ApplicationFiled: January 4, 2024Publication date: April 25, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Jung Wu, Chih-Hang Tung, Tung-Liang Shao, Sheng-Tsung Hsiao, Jen-Yu Wang
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Publication number: 20240122162Abstract: A watering system for use in an animal house having at least one watering pipe and a plurality of nipple drinkers spaced along the watering pipe. The watering pipe has a pipe body that encloses a flow channel through which pressurized water is carried to each of the plurality of nipple drinkers. The pipe body has a flat nipple-facing surface. Each of the plurality of nipple drinkers has a nipple body having a pipe-facing surface that is brought adjacent the nipple-facing surface of the pipe body such that a nipple inlet extends into the flow channel, and wherein the nipple body has a fastener mechanism that detachably holds the nipple drinker against the nipple-facing surface such that each nipple drinker is detachably attached to the watering pipe 108 along the nipple-facing surface.Type: ApplicationFiled: April 6, 2023Publication date: April 18, 2024Inventors: Yu Shao, Guoqiang Yu
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Publication number: 20240120376Abstract: Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first active region extending lengthwise along a first direction and having a first width along a second direction perpendicular to the first direction, a second active region extending lengthwise along the first direction and having a second width along the second direction, and an epitaxial feature sandwiched between the first active region and the second active region along the first direction. The first width is greater than the second width.Type: ApplicationFiled: January 26, 2023Publication date: April 11, 2024Inventors: Po Shao Lin, Jiun-Ming Kuo, Yuan-Ching Peng, You-Ting Lin, Yu Mei Jian
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Patent number: 11955405Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.Type: GrantFiled: January 17, 2022Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Jen Yu Wang, Chung-Jung Wu, Sheng-Tsung Hsiao, Tung-Liang Shao, Chih-Hang Tung, Chen-Hua Yu
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Patent number: 11942556Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.Type: GrantFiled: April 8, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Ru Lin, Shu-Han Chen, Yi-Shao Li, Chun-Heng Chen, Chi On Chui
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Publication number: 20240096884Abstract: A method of making a semiconductor device includes forming a first polysilicon structure over a first portion of a substrate. The method further includes forming a first spacer on a sidewall of the first polysilicon structure, wherein the first spacer has a concave corner region between an upper portion and a lower portion. The method further includes forming a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, and a difference between the first thickness and the second thickness is at most 10% of the second thickness.Type: ApplicationFiled: November 28, 2023Publication date: March 21, 2024Inventors: Yu-Shao CHENG, Chui-Ya PENG, Kung-Wei LEE, Shin-Yeu TSAI
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Patent number: 11915666Abstract: A display device, a display driving integrated circuit (DDIC), and an operation method are provided. The display device includes a display panel, a first DDIC, and a second DDIC. The first DDIC generates a display synchronization signal, and drives a first display area of a display panel according to the display synchronization signal. The second DDIC is coupled to the first DDIC to receive the display synchronization signal. The second DDIC performs a frequency tracking operation on an internal clock signal of the second DDIC by selectively using the display synchronization signal. The second DDIC drives a second display area of the display panel according to the internal clock signal and the display synchronization signal.Type: GrantFiled: May 18, 2022Date of Patent: February 27, 2024Assignee: Novatek Microelectronics Corp.Inventors: Jung-Hsuan Sung, Kai-Wen Shao, Chien-Yu Chen
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Patent number: 11855086Abstract: A semiconductor device includes a substrate, a first polysilicon structure over a first portion of the substrate, and a first spacer on a sidewall of the first polysilicon structure. The first spacer has a concave corner region between an upper portion and a lower portion. The semiconductor device includes a second polysilicon structure over a second portion of the substrate. The semiconductor device includes a second spacer on a sidewall of the second polysilicon structure. The semiconductor device further includes a protective layer covering an entirety of the first spacer and the first polysilicon structure, wherein the protective layer has a first thickness over the concave corner region and a second thickness over the first polysilicon structure, a difference between the first thickness and the second thickness is at most 10% of the second thickness, and the protective layer exposes a top-most portion of a sidewall of the second spacer.Type: GrantFiled: March 18, 2021Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Shao Cheng, Chui-Ya Peng, Kung-Wei Lee, Shin-Yeu Tsai
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Publication number: 20230383986Abstract: A ventilation shutter has a frame forming the mounting structure for a plurality of louvers that are pivotably mounted so as to move between an open condition to allow ventilation air through the shutter and a shut condition. The ventilation shutter includes at least one connecting rod extending transverse the louvers and a plurality of cranks, where each of the louvers has at least one crank connecting the louver to the connecting rod such that pivoting movement of the louvers between the shut condition and the open condition is synchronized with up and down movement of the connecting rod. A permanent magnet couple interacts with the connecting rod and the frame to provide an active magnetic force that holds the louvers in the shut condition. An electromagnet couple interacts with the connecting rod and the frame to provide an active magnetic force that holds the louvers in the open condition.Type: ApplicationFiled: May 24, 2023Publication date: November 30, 2023Inventors: Rock Zhou, Yu Shao
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Patent number: 11823602Abstract: A layout arrangement of a driver integrated circuit includes multiple output pads, a plurality of switching circuits, and multiple data channel circuits. The output pads include a first output pad and a second output pad and are configurable to be coupled to a plurality of data lines. The switching circuits include a first switching circuit. A first selection terminal of the first switching circuit is coupled to the first output pad via a first connecting wire. A second selection terminal of the first switching circuit is coupled to the second output pad via a second connecting wire. The data channel circuits include a first data channel circuit. An output terminal of the first data channel circuit is coupled to a common terminal of the first switching circuit via a third connecting wire. The third connecting wire is longer than the first connecting wire and the second connecting wire.Type: GrantFiled: April 25, 2022Date of Patent: November 21, 2023Assignee: Novatek Microelectronics Corp.Inventors: Hsiu-Hui Yang, Yu-Shao Liu