Abstract: An air intake amount measurement device 200 includes an intake distributor 3 distributing intake air CYL to cylinders 11, 12, 13, and 14, a temperature detector 202 detecting a temperature Ti of the intake air CYL, a pressure detector 201 for detecting a pressure Pi of intake air CL, and a computing unit 100 that computes an air intake amount mfcyl of the intake air CYL on the basis of the temperature Ti transmitted from the temperature detector 202 and the pressure Pi transmitted from the pressure detector 201. The temperature detector 202 detects the temperature Ti of the intake air CYL at a region W spanning, out of an inside of the intake distributor 3, a first branch portion 31 and a second branch portion 32.

Abstract: A ruthenium-based sputtering target having a cast structure, in which a sputter surface of the sputtering target includes at least two or more types of regions, and crystal surfaces in the regions are different from each other, each of the crystal surfaces being specified by a main peak of X-ray diffraction. An object of the present disclosure is to provide a Ru-based sputtering target having no void, having high purity and a low degree of structural anisotropy, and capable of forming a Ru-based film having low particle properties, high film thickness uniformity, and high surface uniformity, and a method for manufacturing the same. According to the present disclosure, there is provided a ruthenium-based sputtering target having a cast structure, in which a sputter surface of the sputtering target includes at least two or more types of regions, and crystal surfaces in the regions are different from each other, each of the crystal surfaces being specified by a main peak of X-ray diffraction.

Abstract: A sputtering target is a sputtering target including aluminum and either a rare earth element or a titanium group element or both a rare earth element and a titanium group element, and the sputtering target has a chlorine content of 100 ppm or less.

Abstract: A bearing device includes a piston arranged in a cylinder of a rotor, and a half bearing mounted on the piston to support a roller. The piston includes a recessed holding surface, and holding side surfaces on both axial sides thereof. Each holding side surface includes a ridge portion having an arc-shaped or elliptic-arc-shaped profile protruding toward a radially inner side of the piston. The half bearing includes a partially cylindrical portion, and protruding portions at a circumferential center thereof. Each protruding portion has a protruding portion end face which includes a central recessed surface, and two support recessed surfaces located on both circumferential sides thereof, that have an arc shape or an elliptic arc shape to correspond to the profile of the ridge portion, so that only the two support recessed surfaces are in contact with the ridge portion.

Abstract: A bearing device includes a piston arranged in a cylinder of a rotor, and a half bearing mounted on the piston to support a roller. The piston includes a recessed holding surface, and holding side surfaces on both axial sides thereof. Each holding side surface includes a ridge portion having an arc-shaped or elliptic-arc-shaped profile protruding toward a radially inner side of the piston. The half bearing includes a partially cylindrical portion, and protruding portions protruding from axial end faces thereof. Each protruding portion has a protruding portion end face which includes a central recessed surface, and two support recessed surfaces located on both circumferential sides thereof, that have an arc shape or an elliptic arc shape to correspond to the profile of the ridge portion, so that only the two support recessed surfaces are in contact with the ridge portion.

Abstract: A sliding member includes a back-metal layer and a sliding layer on the back-metal layer, and the sliding layer has a sliding surface. The sliding layer includes a synthetic resin and fibrous particles dispersed in the synthetic resin. A volume ratio of the fibrous particles in the sliding layer is 1 to 15%, and the fibrous particles are made of semi-graphite having a nano indenter hardness of 1000 to 5000 MPa. An average aspect ratio of the fibrous particles is not less than 5, where an aspect ratio is defined as a ratio of a major axis to a minor axis of the fibrous particle viewed from the sliding surface. An average grain size of the fibrous particles in cross-sectional view perpendicular to the sliding surface is 5 to 50 ?m.

Abstract: A projector is included in a display system having a plurality of projectors. The projector includes: an image input unit having an input image inputted thereto; a projection unit displaying the input image; an estimation unit estimating an arrangement of the plurality of projectors, based on a resolution of the input image and a resolution of an image displayed by the projection unit; and a display control unit causing the projection unit to display an image showing an arrangement of the plurality of projectors, based on a result of estimation by the estimation unit.

Abstract: A sliding member includes a back-metal layer and a sliding layer on the back-metal layer, and the sliding layer has a sliding surface. The sliding layer includes a synthetic resin and fibrous particles dispersed in the synthetic resin. A volume ratio of the fibrous particles in the sliding layer is 1 to 15%, and the fibrous particles are made of semi-graphite having a nano indenter hardness of 1000 to 5000 MPa. An average aspect ratio of the fibrous particles is not less than 5, where an aspect ratio is defined as a ratio of a major axis to a minor axis of the fibrous particle viewed from the sliding surface. An average grain size of the fibrous particles in cross-sectional view perpendicular to the sliding surface is 5 to 50 ?m.

Abstract: A semiconductor device includes: a semiconductor substrate; a plurality of first pad electrodes provided above the semiconductor substrate; a plurality of first wires electrically connected to the plurality of first pad electrodes respectively; a first electrode commonly connected to the plurality of first wires; a second pad electrode provided above the semiconductor substrate; and a first resistance portion and a first protective element that are connected in series between the first electrode and the second pad electrode.

Abstract: A projector is included in a display system having a plurality of projectors. The projector includes: an image input unit having an input image inputted thereto; a projection unit displaying the input image; an estimation unit estimating an arrangement of the plurality of projectors, based on a resolution of the input image and a resolution of an image displayed by the projection unit; and a display control unit causing the projection unit to display an image showing an arrangement of the plurality of projectors, based on a result of estimation by the estimation unit.

Abstract: A semiconductor device includes: a semiconductor substrate; a plurality of first pad electrodes provided above the semiconductor substrate; a plurality of first wires electrically connected to the plurality of first pad electrodes respectively; a first electrode commonly connected to the plurality of first wires; a second pad electrode provided above the semiconductor substrate; and a first resistance portion and a first protective element that are connected in series between the first electrode and the second pad electrode.

Abstract: A silicon carbide semiconductor device includes: a main cell region; a sense cell region; a MOSFET arranged in each of the main cell region and the sense cell region and disposed in a semiconductor substrate having a high impurity concentration layer and a drift layer; an element isolation layer arranged between the main cell region and the sense cell region, and surrounding the sense cell region; and a plurality of electric field relaxation layers arranged between the main cell region and the sense cell region. The MOSFET includes: a base region; a source region; a plurality of deep layers; a trench gate structure; a source electrode; and a drain electrode. The deep layers and the electric field relaxation layers are arranged in a stripe pattern at a predetermined interval.

Abstract: A silicon carbide semiconductor device includes: a main cell region; a sense cell region; a MOSFET arranged in each of the main cell region and the sense cell region and disposed in a semiconductor substrate having a high impurity concentration layer and a drift layer; an element isolation layer arranged between the main cell region and the sense cell region, and surrounding the sense cell region; and a plurality of electric field relaxation layers arranged between the main cell region and the sense cell region. The MOSFET includes: a base region; a source region; a plurality of deep layers; a trench gate structure; a source electrode; and a drain electrode. The deep layers and the electric field relaxation layers are arranged in a stripe pattern at a predetermined interval.

Abstract: Method of producing a target having a small average crystal grain size of gold or platinum and having a uniform crystal grain size in an in-plane direction of a target surface and a thickness direction of the target in order to further stabilize film deposition characteristics during sputtering.

Abstract: Method of producing a target having a small average crystal grain size of gold or platinum and having a uniform crystal grain size in an in-plane direction of a target surface and a thickness direction of the target in order to further stabilize film deposition characteristics during sputtering.

Abstract: A non-volatile semiconductor memory device includes a memory cell configured to allow electrical writing and erasing, a bit line configured to transmit a potential corresponding to data stored in the memory cell in a column direction, a sense amplifier circuit configured to detect a potential of the bit line, and a bit line coupling circuit coupled between the bit line and the sense amplifier circuit. The bit line coupling circuit includes a first bit line coupling transistor in an outer layout area of the bit line coupling circuit and a second bit line coupling transistor in an inner layout area of the bit line coupling circuit. The first bit line coupling transistor has a longer distance in a channel length direction or in a channel width direction between an impurity diffused layer coupled to the bit line and an element isolation area than the second bit line coupling transistor.

Abstract: A non-volatile semiconductor memory device includes a memory cell configured to allow electrical writing and erasing, a bit line configured to transmit a potential corresponding to data stored in the memory cell in a column direction, a sense amplifier circuit configured to detect a potential of the bit line, and a bit line coupling circuit coupled between the bit line and the sense amplifier circuit. The bit line coupling circuit includes a first bit line coupling transistor in an outer layout area of the bit line coupling circuit and a second bit line coupling transistor in an inner layout area of the bit line coupling circuit. The first bit line coupling transistor has a longer distance in a channel length direction or in a channel width direction between an impurity diffused layer coupled to the bit line and an element isolation area than the second bit line coupling transistor.

Abstract: A fixing apparatus, applied to a diffuser plate of a backlight unit (BLU), includes a fixing groove and a positioning piece. The fixing groove is formed at the frame and symmetrically related to one end of a centrosymmetric line of a diffuser plate. A first pair of edges are set at two sides of the centrosymmetric line. A third edge connects the first pair of edges cutting across the centrosymmetric line. The positioning piece is located within the fixing groove. The positioning piece is separated from the first pair of edges of the fixing groove at a first distance, and separated from the third edge of the fixing groove at a second distance, wherein the first distance is smaller than the second distance.

Abstract: In a video game device which performs a video game wherein a game character or unit moves through a plurality of paths including a plurality of branch points according to an instruction of a player, a first movement control unit displays branch-direction indications enabling the player to select one of a plurality of first branch directions at a branch point on a path in the video game, so that a selected one of the plurality of first branch directions is received from the player. A second movement control unit displays preceding-branch-direction indications enabling the player to select, in advance, one of a plurality of second branch directions at a branch point on a following path in the selected first branch direction, so that a selected one of the plurality of second branch directions is received from the player.

Abstract: An image generating device for forming a behind object prepared with polygon data as a part of the background of a virtual three-dimensional space and generating images of the movement of a character object prepared with polygon data in this virtual three-dimensional space. A visual field seen from a viewpoint is operated, and behind objects OTa, OTb, and OTc positioned within this visual field and observable from the viewpoint are specified. Moreover, judged is whether it is the specific condition wherein the character object OTch is within the visual field and positioned in the space closer to the viewpoint side than the specified behind object. The character object OTch is incorporated as the object of display only when it is judged as being this specific condition.