Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.

Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.

Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.

Abstract: A method for separating amorphous iron oxides is provided. The method includes steps of sampling, filtering, dissolving and separating, analyzing the solution containing amorphous radioactive iron oxides and analyzing granules containing crystalline radioactive iron oxides. Characteristics of the radioactive iron oxides during various periods are acquired to solve the radiation buildup problem. Parameters for improving water quality and chemistry performance indicator are thus provided. Crystalline deposits are separated while the dissolving rate of radioactive iron oxides reaches more than 90%. The present invention does not use complex utilities, is easy to use and has a low operation cost for fast analysis.

Abstract: Pipelines are used for charging and discharging power in a redox flow battery (RFB). Inner tube made of ion-exchange material is inserted into each of the pipelines. Conductive sleeves are installed on inside and outside the inner tube. Anode electrolyte and cathode electrolyte flow into corresponding ones of the pipelines of the inner tube. Thereby, wires connected with the conductive sleeves are extended out to be used as electrodes. On charging power, the anode electrolyte and the cathode electrolyte flow forwardly; yet, on discharging power, the anode electrolyte and the cathode electrolyte flow backwardly. Thus, the present invention uses pipelines to add or supplement function of charging/discharging power. Even when the RFB is damaged or failed, power is still charged/discharged for effectively improving or ensuring efficiency of the battery.

Abstract: Pipelines are used for charging and discharging power in a redox flow battery (RFB). Inner tube made of ion-exchange material is inserted into each of the pipelines. Conductive sleeves are put on inside and outside the inner tube. Anode and cathode electrolytes flow into corresponding ones of the pipelines of the inner tube. Thereby, wires connected with the conductive sleeves are extended out to be used as electrodes. On charging power, the solutions flow forwardly; yet, on discharging power, backwardly. Thus, the present invention uses pipelines to add or supplement function of charging/discharging power. Even when the RFB is damaged or failed, power is still charged/discharged for effectively improving or ensuring efficiency of the battery.