Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: An interactive exercise apparatus for guiding a user to perform an exercise includes a display device and a detecting device. The display device is configured to display video imagery which shows an instructor image and at least one motion check image. The motion check image corresponds to a predetermined one of a plurality of body parts of the user, which has a motion guide track and a motion achievement evaluation. The detecting device is configured to detect displacement of the body parts. The motion guide track is displayed on a predetermined position of the video imagery with a predetermined track pattern, corresponding to a movement path of the predetermined body part when the user follows movements demonstrated by the instructor image to perform the exercise. The motion achievement evaluation indicates a matching degree determined according to the displacement of the predetermined body part detected by the detecting device.

Abstract: A semiconductor device and a method of fabricating a semiconductor device are provided herein. The semiconductor device includes a substrate; a fin structure arranged on the substrate and including a ridge portion and a bottom portion between the ridge portion and the substrate, wherein the ridge portion comprises a channel region and a fin region between the channel region and the bottom portion, a critical dimension of the bottom portion in a cross-fin direction is gradually increased toward the substrate to twice or more of a critical dimension of the channel region in the cross-fin direction; a metal gate structure disposed on the fin structure extending the cross-fin direction; and an epitaxy region disposed beside the metal gate structure in a lengthwise direction of the fin structure and connected to the fin structure.

Abstract: A device includes a substrate, a first fin, a second fin, a first isolation structure, a second isolation structure, and a gate structure. The first fin extends from a p-type region of the substrate. The second fin extends from an n-type region of the substrate. The first isolation structure is over the p-type region and adjacent to the first fin. The first isolation structure has a bottom surface and opposite first and second sidewalls connected to the bottom surface, a first round corner is between the bottom surface and the first sidewall of the first isolation structure, and the first sidewall is substantially parallel to the second sidewall. The second isolation structure is over the n-type region and adjacent to the first fin. The first isolation structure is deeper than the second isolation structure. The gate structure is over the first isolation structure and covering the first fin.

Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.

Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.

Abstract: An automatic test method for reliability and functionality of electronic device is provided to deploy a robotic arm to perform reliability test on a tested component. In the meantime, the test host can directly access the generic log files generated by the tested electronic device without the need of using a third-party test utility on the tested electronic device. Analysis is carried out by the test host using the log files to determine whether each test round generates functional result to the tested component so that data of the functionality can be collected.

Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.

Abstract: An apparatus for cleaning a glass sheet is provided. The apparatus includes a brushing device including a head and a plurality of bristles, each bristle having a first end attached to the head and a second end opposing the first end. The second ends contact an edge of the glass sheet during cleaning of the glass sheet. Methods for cleaning glass sheets are also provided.

Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.

Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.