Patents by Inventor Yu-tung Yin
Yu-tung Yin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230361213Abstract: Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.Type: ApplicationFiled: June 28, 2023Publication date: November 9, 2023Inventors: Miin-Jang CHEN, Po-Hsien CHENG, Yu-tung YIN
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Publication number: 20230317820Abstract: A semiconductor device includes a plurality of semiconductor layers arranged one above another, and source/drain epitaxial regions on opposite sides of the plurality of semiconductor layers. The semiconductor device further includes a gate structure surrounding each of the plurality of semiconductor layers. The gate structure includes interfacial layers respectively over the plurality of semiconductor layers, a high-k dielectric layer over the interfacial layers, and a gate metal over the high-k dielectric layer. The gate structure further includes gate spacers spacing apart the gate structure from the source/drain epitaxial regions. A top position of the high-k dielectric layer is lower than top positions of the gate spacers.Type: ApplicationFiled: May 26, 2023Publication date: October 5, 2023Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITYInventors: Tung-Ying LEE, Tse-An CHEN, Tzu-Chung WANG, Miin-Jang CHEN, Yu-Tung YIN, Meng-Chien YANG
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Patent number: 11728426Abstract: Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.Type: GrantFiled: July 26, 2021Date of Patent: August 15, 2023Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan UniversityInventors: Miin-Jang Chen, Po-Hsien Cheng, Yu-tung Yin
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Patent number: 11699739Abstract: A semiconductor device includes source and a drain above a substrate and spaced apart along a first direction, and a semiconductor channel extending between the source and the drain. The semiconductor device further includes gate spacers, an interfacial layer, and a metal gate structure. The gate spacers are disposed on the semiconductor channel and spaced apart by a spacer-to-spacer distance along the first direction. The interfacial layer is on the semiconductor channel. The interfacial layer extends a length along the first direction, and the length is less than a minimum of the spacer-to-spacer distance along the first direction. The metal gate structure is over the interfacial layer.Type: GrantFiled: January 27, 2022Date of Patent: July 11, 2023Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITYInventors: Tung-Ying Lee, Tse-An Chen, Tzu-Chung Wang, Miin-Jang Chen, Yu-Tung Yin, Meng-Chien Yang
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Publication number: 20220149177Abstract: A semiconductor device includes source and a drain above a substrate and spaced apart along a first direction, and a semiconductor channel extending between the source and the drain. The semiconductor device further includes gate spacers, an interfacial layer, and a metal gate structure. The gate spacers are disposed on the semiconductor channel and spaced apart by a spacer-to-spacer distance along the first direction. The interfacial layer is on the semiconductor channel. The interfacial layer extends a length along the first direction, and the length is less than a minimum of the spacer-to-spacer distance along the first direction. The metal gate structure is over the interfacial layer.Type: ApplicationFiled: January 27, 2022Publication date: May 12, 2022Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITYInventors: Tung-Ying LEE, Tse-An CHEN, Tzu-Chung WANG, Miin-Jang CHEN, Yu-Tung YIN, Meng-Chien YANG
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Patent number: 11245024Abstract: A method of manufacturing a semiconductor device includes forming a fin structure comprising alternately stacked first semiconductor layers and second semiconductor layers over a substrate. A sacrificial gate structure is formed over the fin structure. Spacers are formed on either side of the sacrificial gate structure. The sacrificial gate structure is removed to form a trench between the spacers. The first semiconductor layers are removed from the trench, while leaving the second semiconductor layers suspended in the trench. A self-assembling monolayer is formed on sidewalls of the spacers in the trench. Interfacial layers are formed encircling the suspended second semiconductor layers, respectively. A high-k dielectric layer is deposited at a faster deposition rate on the interfacial layers than on the self-assembling monolayer. A metal gate structure is formed over the high-k dielectric layer.Type: GrantFiled: April 9, 2020Date of Patent: February 8, 2022Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITYInventors: Tung-Ying Lee, Tse-An Chen, Tzu-Chung Wang, Miin-Jang Chen, Yu-Tung Yin, Meng-Chien Yang
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Publication number: 20210359135Abstract: Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.Type: ApplicationFiled: July 26, 2021Publication date: November 18, 2021Inventors: Miin-Jang CHEN, Po-Hsien CHENG, Yu-tung YIN
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Publication number: 20210320185Abstract: A method of manufacturing a semiconductor device includes forming a fin structure comprising alternately stacked first semiconductor layers and second semiconductor layers over a substrate. A sacrificial gate structure is formed over the fin structure. Spacers are formed on either side of the sacrificial gate structure. The sacrificial gate structure is removed to form a trench between the spacers. The first semiconductor layers are removed from the trench, while leaving the second semiconductor layers suspended in the trench. A self-assembling monolayer is formed on sidewalls of the spacers in the trench. Interfacial layers are formed encircling the suspended second semiconductor layers, respectively. A high-k dielectric layer is deposited at a faster deposition rate on the interfacial layers than on the self-assembling monolayer. A metal gate structure is formed over the high-k dielectric layer.Type: ApplicationFiled: April 9, 2020Publication date: October 14, 2021Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY, NATIONAL TAIWAN NORMAL UNIVERSITYInventors: Tung-Ying LEE, Tse-An CHEN, Tzu-Chung WANG, Miin-Jang CHEN, Yu-Tung YIN, Meng-Chien YANG
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Patent number: 11114564Abstract: Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.Type: GrantFiled: July 16, 2019Date of Patent: September 7, 2021Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Miin-Jang Chen, Po-Hsien Cheng, Yu-tung Yin
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Publication number: 20200066916Abstract: Techniques in accordance with embodiments described herein are directed to a MFM structure that includes a resistance component, an inductance component and a capacitance component. The MFM device is equivalent to a series LC circuit with the resistance component coupled in parallel with the capacitance component. The MFM structure is used as a series LC resonant circuit, band-pass circuit, band-stop circuit, low-pass filter, high-pass filter, oscillators, or negative capacitors.Type: ApplicationFiled: July 16, 2019Publication date: February 27, 2020Inventors: Miin-Jang Chen, Po-Hsien Cheng, Yu-tung Yin