Abstract: Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO2 film having an interface control function on the lower electrode layer; forming a ZrO2-based film on the first TiO2 film; performing an annealing process for crystallizing ZrO2 in the ZrO2-based film, after forming the ZrO2-based film; forming a second TiO2 film which serves as a capacity film on the ZrO2-based film; and forming an upper electrode layer on the second TiO2 film.

Abstract: In discharging a source gas from a first process gas nozzle, rectifying members including a coolant flow passage provided in a concertinaing manner therein are arranged both sides of the first process gas nozzle. Then, a coolant at a temperature higher than a liquefaction temperature of the source gas and lower than a thermal decomposition temperature of the source gas is flown through the coolant flow passage, by which the first process gas nozzle is cooled through the rectifying member.

Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Abstract: Provided is a substrate processing apparatus which includes: first and second vacuum transfer chambers which are partitioned from each other; processing chambers configured to perform a vacuum processing onto substrates; a load lock chamber installed to be sandwiched between the first and second vacuum transfer chambers, and including partition valves installed between the load lock chamber and a normal pressure atmosphere, and between the load lock chamber and each of the first and second vacuum transfer chambers; and substrate mounting tables inside the load lock chamber and configured to move between an upper position at which the substrates are transferred between the load lock chamber and the normal pressure atmosphere, and a lower position at which the substrates are transferred between the load lock chamber and the first or second vacuum transfer chamber.

Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.

Abstract: Provided is a plasma processing apparatus, which includes a table unit installed within a processing vessel and configured to place a substrate thereon, a purge gas supply unit configured to supply a process gas into the processing vessel, a plasma generating unit configured to turn the process gas to plasma, a magnetic field forming mechanism installed at a lateral side of the table unit and configured to form magnetic fields in a processing atmosphere in order to move electrons existing in the plasma of the process gas along a surface of the substrate; and an exhaust mechanism configured to exhaust gas from the interior of the processing vessel. The magnetic fields are opened at at-least one point in a peripheral edge portion of the substrate such that a loop of magnetic flux lines surrounding the peripheral edge portion of the substrate is not formed.

Abstract: Provided is a gas supply apparatus which includes a raw material gas supply system for supplying a raw material gas into a processing container, a tank to store a liquid raw material, a main heating unit for heating the bottom and sides of the tank, a ceiling heating unit for heating a ceiling portion of the tank, a main temperature measurement unit for measuring a temperature of a region of the main heating unit, a ceiling temperature measurement unit for measuring a temperature of the ceiling heating unit, a liquid phase temperature measurement unit for measuring a temperature of the liquid raw material, a vapor phase temperature measurement unit for measuring a temperature of a vapor phase portion in the upper part of the tank, a level measurement unit for measuring a liquid level of the liquid raw material, and a temperature control unit for controlling the heating units.

Abstract: To provide a method for producing a filtration filter that can simplify the process for providing clean water or freshwater. By etching silicon substrate 1 using masking film formed on a surface of substrate 1 and having numerous openings to expose portions of the surface, numerous circular holes 2 with an approximate diameter of 100 nm are formed in substrate 1. Diameter (D1) at minimum-diameter portions 4 near the openings of circular holes 2 to be reduced by silica film 3 is adjusted to be 1 nm˜100 nm by depositing silica film 3 on the inner surfaces of circular holes 2.

Abstract: A raw material supplying device includes a raw material supplying pipe including a vertically extending rising pipe. The device further includes a first raw material discharging pipe which is provided to branch from the lower end of the rising pipe. The device further includes a cleaning fluid supplying pipe configured to supply one of purge gas and cleaning solution in order to extrude and discharge liquid raw material in the raw material supplying pipe to the first raw material discharging pipe. The device further includes a first raw material supplying valve and a first raw material discharging valve which are respectively provided in the side of the repository and the first raw material discharging pipe other than a connection portion of the raw material supplying pipe with the first raw material discharging pipe. The device further includes a cleaning fluid supplying valve provided in the cleaning fluid supplying pipe.

Abstract: A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the processing space and a slit-like exhaust port on the opposite side of the processing space from the nozzle housing area; a lid for closing the bottom opening of the processing container structure; a support structure for supporting the objects and which can be inserted into and withdrawn from the processing container structure; a gas introduction means including a gas nozzle housed in the nozzle housing area; an exhaust means including a plurality of exhaust systems for exhausting the atmosphere in the processing container structure; a heating means for heating the objects; and a control means for controlling the gas introduction means, the exhaust means and the heating means.