Patents by Inventor Yu Wen Cheng
Yu Wen Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210089084Abstract: A portable electronic device includes a host, a sliding base, a base plate, a display and a sliding rotating element. The sliding base is disposed on the host and has at least one guiding portion and at least one sliding slot connected to the guiding portion. The base plate is disposed on the sliding base. The display is pivoted on the base plate. The sliding rotating element is fixed to the base plate and is rotatably and slidably connected to the sliding base, and the display and the base plate are configured to rotate or slide on the sliding base along with the sliding rotating element.Type: ApplicationFiled: September 7, 2020Publication date: March 25, 2021Applicant: COMPAL ELECTRONICS, INC.Inventors: Yan-Yu Chen, Chien-Feng Chan, Ming-Cheng Tsou, Yu-Wen Cheng, Chun-Wen Wang, Wang-Hung Yeh
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Publication number: 20200356141Abstract: An electronic device including a first body, a supporting member, a second body, and an input assembly is provided. The first body is provided with a front end and a rear end opposite to each other. One terminal end of the supporting member is pivotally connected to the rear end of the first body. The second body is pivotally connected to the other terminal end of the supporting member. The input assembly is rotatably connected to the second body and is suitable for being carried by the first body. When a lower edge of the second body is located at the front end of the first body, the input assembly protrudes out from the front end of the first body.Type: ApplicationFiled: May 7, 2020Publication date: November 12, 2020Applicant: COMPAL ELECTRONICS, INC.Inventors: Yan-Yu Chen, Wang-Hung Yeh, Yu-Wen Cheng, Chun-Wen Wang
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Publication number: 20200152763Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.Type: ApplicationFiled: January 13, 2020Publication date: May 14, 2020Inventors: Yu-Wen Cheng, Cheng-Tung Lin, Chih-Wei Chang, Hong-Mao Lee, Ming-Hsing Tsai, Sheng-Hsuan Lin, Wei-Jung Lin, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Wei-Yip Loh, Ya-Yi Cheng
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Publication number: 20200111739Abstract: A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.Type: ApplicationFiled: December 9, 2019Publication date: April 9, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Wen CHENG, Wei-Yip LOH, Yu-Hsiang LIAO, Sheng-Hsuan LIN, Hong-Mao LEE, Chun-I TSAI, Ken-Yu CHANG, Wei-Jung LIN, Chih-Wei CHANG, Ming-Hsing TSAI
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Patent number: 10535748Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.Type: GrantFiled: March 1, 2018Date of Patent: January 14, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Wen Cheng, Cheng-Tung Lin, Chih-Wei Chang, Hong-Mao Lee, Ming-Hsing Tsai, Sheng-Hsuan Lin, Wei-Jung Lin, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Wei-Yip Loh, Ya-Yi Cheng
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Patent number: 10504834Abstract: A semiconductor device and method of forming the same that includes forming a dielectric layer over a substrate and patterning a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate. The method can also include forming a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate. Subsequently, a conductive layer can be formed to cover the side portions and the bottom portion of the contact region and the conductive layer can be annealed to form a silicide region in the substrate beneath the bottom portion of the contact region, and the conductive layer can then be selectively removed on the side portions of the contact region.Type: GrantFiled: March 1, 2018Date of Patent: December 10, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Wen Cheng, Wei-Yip Loh, Yu-Hsiang Liao, Sheng-Hsuan Lin, Hong-Mao Lee, Chun-I Tsai, Ken-Yu Chang, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 10437292Abstract: Provided is a protection cover, applicable to an electronic device. The protection cover includes a cover body and at least one sensing module. The cover body has a view window, wherein the cover body is suitable for covering a display surface of the electronic device and exposing a part of the display surface via the view window. The at least one sensing module is provided on the cover body and aligns with the view window, wherein the at least one sensing module is suitable for sensing at least one object in the view window to generate a touch signal, and transmitting the touch signal to the electronic device.Type: GrantFiled: May 23, 2018Date of Patent: October 8, 2019Assignee: COMPAL ELECTRONICS, INC.Inventors: Shu-Hsien Chu, Yu-Wen Cheng, Ming-Chung Liu
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Publication number: 20190273147Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.Type: ApplicationFiled: March 1, 2018Publication date: September 5, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Wen CHENG, Cheng-Tung LIN, Chih-Wei CHANG, Hong-Mao LEE, Ming-Hsing TSAI, Sheng-Hsuan LIN, Wei-Jung LIN, Yan-Ming TSAI, Yu-Shiuan WANG, Hung-Hsu CHEN, Wei-Yip LOH, Ya-Yi CHENG
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Publication number: 20190273042Abstract: A semiconductor device and method of forming the same that includes forming a dielectric layer over a substrate and patterning a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate. The method can also include forming a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate. Subsequently, a conductive layer can be formed to cover the side portions and the bottom portion of the contact region and the conductive layer can be annealed to form a silicide region in the substrate beneath the bottom portion of the contact region, and the conductive layer can then be selectively removed on the side portions of the contact region.Type: ApplicationFiled: March 1, 2018Publication date: September 5, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Wen Cheng, Wei-Yip Loh, Yu-Hsiang Liao, Sheng-Hsuan Lin, Hong-Mao Lee, Chun-I Tsai, Ken-Yu Chang, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
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Publication number: 20190273023Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.Type: ApplicationFiled: March 1, 2018Publication date: September 5, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Yip LOH, Chih-Wei CHANG, Hong-Mao LEE, Chun-Hsien HUANG, Yu-Ming HUANG, Yan-Ming TSAI, Yu-Shiuan WANG, Hung-Hsu CHEN, Yu-Kai CHEN, Yu-Wen CHENG
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Patent number: 10332789Abstract: The present disclosure relates generally to techniques for forming a continuous adhesion layer for a contact plug. A method includes forming an opening through a dielectric layer to an active area on a substrate. The method includes performing a first plasma treatment along a sidewall of the opening. The method includes performing an atomic layer deposition (ALD) process to form a metal nitride layer along the sidewall of the opening. The ALD process includes a plurality of cycles. Each cycle includes flowing a precursor to form a metal monolayer along the sidewall and performing a second plasma treatment to treat the metal monolayer with nitrogen. The method includes depositing a conductive material on the metal nitride layer in the opening to form a conductive feature.Type: GrantFiled: February 2, 2018Date of Patent: June 25, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tien-Pei Chou, Ken-Yu Chang, Chun-Chieh Wang, Yueh-Ching Pai, Yu-Ting Lin, Yu-Wen Cheng
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Publication number: 20190172457Abstract: A notebook computer including a foldable body, a display unit, a touch pad, a keyboard, a first control unit, a wake-up unit, and a voice-assistant system, a second control unit electrically connected to the first control unit, the wake-up unit, and the voice-assistant system is provided. The first control unit is electrically connected to the display unit, the touch pad, and the keyboard. When the foldable body is in a folded and closed state, the display unit, the touch pad, and the keyboard are inactivated, the notebook computer is in a first mode. In the first mode, a user drives the wake-up unit to generate a wake-up signal being transmitted to the second control unit to activate the first control unit and the voice-assistant system. The notebook computer is transformed to a second mode, wherein the display unit, the touch pad, and the keyboard are still inactivated or sleeping.Type: ApplicationFiled: November 29, 2018Publication date: June 6, 2019Applicant: COMPAL ELECTRONICS, INC.Inventors: Yu-Wen Cheng, Wang-Hung Yeh, Hsin-Chieh Fang, Shu-Hsien Chu, Chun-Wen Wang
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Publication number: 20190164822Abstract: The present disclosure relates generally to techniques for forming a continuous adhesion layer for a contact plug. A method includes forming an opening through a dielectric layer to an active area on a substrate. The method includes performing a first plasma treatment along a sidewall of the opening. The method includes performing an atomic layer deposition (ALD) process to form a metal nitride layer along the sidewall of the opening. The ALD process includes a plurality of cycles. Each cycle includes flowing a precursor to form a metal monolayer along the sidewall and performing a second plasma treatment to treat the metal monolayer with nitrogen. The method includes depositing a conductive material on the metal nitride layer in the opening to form a conductive feature.Type: ApplicationFiled: February 2, 2018Publication date: May 30, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tien-Pei CHOU, Ken-Yu CHANG, Chun-Chieh WANG, Yueh-Ching PAI, Yu-Ting LIN, Yu-Wen CHENG
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Patent number: 10241546Abstract: A portable electronic device includes a first body and a second body. The second body includes a processing unit, and a first touch panel, a second touch panel, a keyboard and at least one detecting module electrically connected to the processing unit, respectively. The keyboard is slidably disposed above the second touch panel, and the detecting module is adapted to detect a position of the keyboard. When the keyboard is located at a first position, the keyboard module covers the second touch panel, and the detecting module transmits a first signal to the processing unit so that the first touch panel is turned on. When the keyboard is located at a second position, the keyboard exposes the second touch panel, and the detecting module transmits a second signal to the processing unit so that the first touch panel is turned off. A touch panel controlling method of the portable electronic device is further provided.Type: GrantFiled: June 1, 2016Date of Patent: March 26, 2019Assignee: COMPAL ELECTRONICS, INC.Inventors: Ming-Shun Lu, Ming-Chung Liu, Hsin-Chieh Fang, Yu-Wen Cheng, Yu-Ning Chang
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Publication number: 20180341294Abstract: Provided is a protection cover, applicable to an electronic device. The protection cover includes a cover body and at least one sensing module. The cover body has a view window, wherein the cover body is suitable for covering a display surface of the electronic device and exposing a part of the display surface via the view window. The at least one sensing module is provided on the cover body and aligns with the view window, wherein the at least one sensing module is suitable for sensing at least one object in the view window to generate a touch signal, and transmitting the touch signal to the electronic device.Type: ApplicationFiled: May 23, 2018Publication date: November 29, 2018Applicant: COMPAL ELECTRONICS, INC.Inventors: Shu-Hsien Chu, Yu-Wen Cheng, Ming-Chung Liu
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Patent number: 9921610Abstract: A portable electronic device includes first body and second body pivoted to the first body. The first body includes casing, supporter, first magnetic component and torsion component. The casing includes accommodating trench and first trench. First lateral of the supporter is pivoted to the casing via the torsion component, and second lateral of the supporter includes notch. When the supporter is located in the accommodating trench and the first magnetic component extends into the notch, the supporter is positioned inside the accommodating trench by the first magnetic component, and the torsion component stores elastic potential energy. When the second body rotates close to the first body, the first magnetic component exits the notch due to magnetic repulsive force of second magnetic component of the second body, and the torsion component releases the elastic potential energy so that the second lateral of the supporter rotates out to support the second body.Type: GrantFiled: September 22, 2016Date of Patent: March 20, 2018Assignee: COMPAL ELECTRONICS, INC.Inventors: Ming-Shun Lu, Ming-Chung Liu, Kun-Hsin Liu, Yun Bai, Yu-Wen Cheng
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Patent number: D787503Type: GrantFiled: February 22, 2016Date of Patent: May 23, 2017Assignee: COMPAL ELECTRONICS, INC.Inventors: Yun Bai, Ming-Chung Liu, Wang-Hung Yeh, Yu-Wen Cheng, Yu-Ning Chang, Hsin-Chieh Fang
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Patent number: D812617Type: GrantFiled: January 19, 2017Date of Patent: March 13, 2018Assignee: COMPAL ELECTRONICS, INC.Inventors: Yun Bai, Wang-Hung Yeh, Ming-Chung Liu, Yu-Wen Cheng, Hsin-Chieh Fang, Yu-Ning Chang
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Patent number: D912659Type: GrantFiled: January 25, 2018Date of Patent: March 9, 2021Assignee: COMPAL ELECTRONICS, INC.Inventors: Yu-Wen Cheng, Tzu-Chien Lai
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Patent number: D912660Type: GrantFiled: January 25, 2018Date of Patent: March 9, 2021Assignee: COMPAL ELECTRONICS, INC.Inventors: Yu-Wen Cheng, Tzu-Chien Lai