Abstract: In a method of manufacturing a semiconductor device, a sacrificial gate structure is formed over a substrate. The sacrificial gate structure includes a sacrificial gate electrode. A first dielectric layer is formed over the sacrificial gate structure. A second dielectric layer is formed over the first dielectric layer. The second and first dielectric layers are planarized and recessed, and an upper portion of the sacrificial gate structure is exposed while a lower portion of the sacrificial gate structure is embedded in the first dielectric layer. A third dielectric layer is formed over the exposed sacrificial gate structure and over the first dielectric layer. A fourth dielectric layer is formed over the third dielectric layer. The fourth and third dielectric layers are planarized, and the sacrificial gate electrode is exposed and part of the third dielectric layer remains on the recessed first dielectric layer. The sacrificial gate electrode is removed.

Abstract: In an embodiment, a device includes: a first integrated circuit die having a first contact region and a first non-contact region; an encapsulant contacting sides of the first integrated circuit die; a dielectric layer contacting the encapsulant and the first integrated circuit die, the dielectric layer having a first portion over the first contact region, a second portion over the first non-contact region, and a third portion over a portion of the encapsulant; and a metallization pattern including: a first conductive via extending through the first portion of the dielectric layer to contact the first integrated circuit die; and a conductive line extending along the second portion and third portion of the dielectric layer, the conductive line having a straight portion along the second portion of the dielectric layer and a first meandering portion along the third portion of the dielectric layer.

Abstract: A switching control circuit for use in controlling a resonant flyback power converter generates a first driving signal and a second driving signal. The first driving signal is configured to turn on the first transistor to generate a first current to magnetize a transformer and charge a resonant capacitor. The transformer and charge a resonant capacitor are connected in series. The second driving signal is configured to turn on the second transistor to generate a second current to discharge the resonant capacitor. During a power-on period of the resonant flyback power converter, the second driving signal includes a plurality of short-pulses configured to turn on the second transistor for discharging the resonant capacitor. A pulse-width of the short-pulses of the second driving signal is short to an extent that the second current does not exceed a current limit threshold.

Abstract: A method includes forming first and second semiconductor fins and a gate structure over a substrate; forming a first and second source/drain epitaxy structures over the first and second semiconductor fins; forming an interlayer dielectric (ILD) layer over the first and second source/drain epitaxy structures; etching the gate structure and the ILD layer to form a trench; performing a first surface treatment to modify surfaces of a top portion and a bottom portion of the trench to NH-terminated; performing a second surface treatment to modify the surfaces of the top portion of the trench to N-terminated, while leaving the surfaces of the bottom portion of the trench being NH-terminated; and depositing a first dielectric layer in the trench, wherein the first dielectric layer has a higher deposition rate on the surfaces of the bottom portion of the trench than on the surfaces of the bottom portion of the trench.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. The second driving signal includes a resonant pulse having a resonant pulse width and a ZVS pulse during the DCM operation. The resonant pulse is configured to demagnetize the transformer. The resonant pulse has a first minimum resonant period for a first level of the output load and a second minimum resonant period for a second level of the output load. The first level is higher than the second level and the second minimum resonant period is shorter than the first minimum resonant period.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. During a DCM (discontinuous conduction mode) operation, the second driving signal includes a resonant pulse for demagnetizing the transformer and a ZVS (zero voltage switching) pulse for achieving ZVS of the first transistor. The resonant pulse is skipped when the output voltage is lower than a low-voltage threshold.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A method for tamper protection in cryptographic calculations is provided. A cryptographic calculation includes a plurality of normal rounds and a plurality of redundant rounds. The method includes obtaining a first variable x and a second variable y using a random number generator; dividing the normal rounds into a first normal section and a second normal section, and dividing the redundant rounds into a first redundant section and a second redundant section according to the first variable x and the second variable y; executing the first normal section and the first redundant section in sequence using a clock signal; in response to completion of the first redundant section and a first calculation result of the first normal section and a second calculation result of the first redundant section being the same, executing the second normal section and the second redundant section in sequence to complete the cryptographic calculation.

Abstract: The present disclosure provides a human machine interface panel including a main body and a fixing device. The main body includes a housing and a first contact surface. The fixing device includes a base, a self-tapping screw and a bottom base. The base is detachably connected to the housing and has a mounting hole. The self-tapping screw penetrates through the mounting hole and has an interference fit to the mounting hole. The bottom base is disposed at an end of the self-tapping screw. By disposing a plate between the bottom base and the first contact surface, and tightening the self-tapping screw, the plate is clamped by the bottom base and the first contact surface. Consequently, the human machine interface panel is fixed to the plate.

Abstract: Provided is a nanoparticle or a pharmaceutical composition including the same for treating or remitting a neovascularization or an angiogenesis in eye segments, and the nanoparticle includes a hyaluronic acid and a therapeutic peptide.

Abstract: A display device comprises a cover and a display module. The cover includes a bottom plate and at least one cover limit element. The cover limit element projects inwardly from an inner surface of the bottom of the cover. A space is formed between the bottom plate and the cover limit element. The display module includes a frame with at least one frame limit element disposed at an end of the frame and projecting at a position between the cover limit element and the bottom plate. The frame limit element is configured to be disposed in the space and between the cover limit element and the bottom plate to retain the display module with the cover.

Abstract: A display device comprises a cover and a display module. The cover includes a bottom plate and at least one cover limit element. The cover limit element projects inwardly from an inner surface of the bottom of the cover. A space is formed between the bottom plate and the cover limit element. The display module includes a frame with at least one frame limit element disposed at an end of the frame and projecting at a position between the cover limit element and the bottom plate. The frame limit element is configured to be disposed in the space and between the cover limit element and the bottom plate to retain the display module with the cover.

Abstract: A system and method for automatic SPC chart generation including a storage device and a data acquisition module. The storage device stores a chamber management tree, a recipe window management tree, a parameter configuration table and multiple chart profile records. The data acquisition module, which resides in a memory, acquires multiple process events and parameter values corresponding to the process events and a process parameter, selects a relevant statistical algorithm, calculates a statistical value by applying the statistical algorithm to the parameter values, creates a new chart profile record and a parameter statistics record therein if the chart profile record is absent, and stores the statistical values and measured time in the parameter statistics record.

Abstract: A system and method for automatic SPC chart generation including a storage device and a data acquisition module. The storage device stores a chamber management tree, a recipe window management tree, a parameter configuration table and multiple chart profile records. The data acquisition module, which resides in a memory, acquires multiple process events and parameter values corresponding to the process events and a process parameter, selects a relevant statistical algorithm, calculates a statistical value by applying the statistical algorithm to the parameter values, creates a new chart profile record and a parameter statistics record therein if the chart profile record is absent, and stores the statistical values and measured time in the parameter statistics record.

Abstract: An apparatus and method for detecting mispositioned wafers attributable to transfer shift of the wafer are disclosed. A calibration wafer has a target region comprising a pattern of optically distinguishable features from which is determined the position of the calibration wafer within the chamber subsequent to its transfer therein. Preferably, the features comprise a pattern of colors that can be detected by spectroscopy. A preferred form and manner of providing such color features is by way of dielectric thin film filters.

Abstract: An apparatus and method for detecting in chamber wafer position and process status are disclosed. A chamber includes a processing pedestal and plurality of lift pins. Each lift pin has an associated load cell for measuring the load exerted by the wafer on the lift pins. Mispositioned wafers or broken wafers will result in load measurements outside of expected ranges. Position of the wafer may be determined from the load distribution sensed on the lift pins.

Abstract: An apparatus and method for detecting in chamber wafer position and process status are disclosed. A chamber includes a processing pedestal and plurality of lift pins. Each lift pin has an associated load cell for measuring the load exerted by the wafer on the lift pins. Mispositioned wafers or broken wafers will result in load measurements outside of expected ranges. Position of the wafer may be determined from the load distribution sensed on the lift pins.