Abstract: In certain aspects, the invention provides crystalline forms of olaparib (4-[(3-[(4-cyclopropylcarbonyl)piperazin-4-yl]carbonyl)-4-fluorophenyl]methyl(2H)phthalazin-1-one). In related aspects, the invention provides processes for preparing the crystalline forms of olaparib. The processes include: forming a solution comprising crude olaparib and an organic solvent; adding an anti-solvent to the solution to form a slurry comprising a precipitate; isolating the precipitate; and drying the precipitate to obtain a crystalline form I of olaparib or a crystalline form II of olaparib.

Abstract: The disclosure provides a coating composition, a film made of the coating composition, and method for preparing the coating composition. The coating composition includes a product prepared from cross-linking a (a) polysilsesquioxane with a (b) compound with the structure represented by Formula (I): wherein R is independently a hydroxyl group, or C1-8 alkoxy group, R1 is a C3-12 epoxy group, C3-12 acrylate group, C3-12 alkylacryloxy group, C3-12 aminoalkyl group, C3-12 isocyanate-alkyl group, C3-12 alkylcarboxylic acid group, C3-12 alkyl halide group, C3-12 mercaptoalkyl group, C3-12 alkyl group, or C3-12 alkenyl group, and R2 is a hydroxyl group, C1-8 alkyl group, or C1-8 alkoxy group.

Abstract: A method for forming an inorganic passivation material is provided. The method includes mixing about 5 to 80 parts by weight of trialkoxysilane, about 10 to 80 parts by weight of tetraalkoxysilane, and about 1 to 30 parts by weight of catalyst to perform a reaction at pH of about 0.05 to 4 to form an inorganic resin material. The inorganic resin material is modified by phosphate ester to form an inorganic passivation material, wherein phosphate ester is about 0.1-10 parts by weight based on 100 parts by weight of the inorganic resin material. An inorganic passivation material and a passivation protective film produced therefrom are also provided.

Abstract: In certain aspects, the invention provides crystalline forms of olaparib (4-[(3-[(4-cyclopropylcarbonyl)piperazin-4-yl]carbonyl)-4-fluorophenyl]methyl(2H)phthalazin-1-one). In related aspects, the invention provides processes for preparing the crystalline forms of olaparib. The processes include: forming a solution comprising crude olaparib and an organic solvent; adding an anti-solvent to the solution to form a slurry comprising a precipitate; isolating the precipitate; and drying the precipitate to obtain a crystalline form I of olaparib or a crystalline form II of olaparib.

Abstract: A heat shielding material is provided. The heat shielding material includes a sheet material and a dark pigment layer covering the sheet material. The dark pigment layer includes a crosslinking structure formed of siloxane functional groups and dark pigments dispersing in the crosslinking structure. A heat shielding composition and a heat shielding structure employing the same are also provided.

Abstract: A heat shielding material is provided. The heat shielding material includes a sheet material and a pigment layer covering the sheet material. The pigment layer includes a crosslinking structure formed of siloxane functional groups and pigments dispersed in the crosslinking structure. A heat shielding composition and a heat shielding structure employing the same are also provided.

Abstract: A method for forming an inorganic passivation material is provided. The method includes mixing about 5 to 80 parts by weight of trialkoxysilane, about 10 to 80 parts by weight of tetraalkoxysilane, and about 1 to 30 parts by weight of catalyst to perform a reaction at pH of about 0.05 to 4 to form an inorganic resin material. The inorganic resin material is modified by phosphate ester to form an inorganic passivation material, wherein phosphate ester is about 0.1-10 parts by weight based on 100 parts by weight of the inorganic resin material. An inorganic passivation material and a passivation protective film produced therefrom are also provided.

Abstract: The disclosure provides a coating composition, a film made of the coating composition, and method for preparing the coating composition. The coating composition includes a product prepared from cross-linking a (a) polysilsesquioxane with a (b) compound with the structure represented by Formula (I): wherein R is independently a hydroxyl group, or C1-8 alkoxy group, R1 is a C3-12 epoxy group, C3-12 acrylate group, C3-12 alkylacryloxy group, C3-12 aminoalkyl group, C3-12 isocyanate-alkyl group, C3-12 alkylcarboxylic acid group, C3-12 alkyl halide group, C3-12 mercaptoalkyl group, C3-12 alkyl group, or C3-12 alkenyl group, and R2 is a hydroxyl group, C1-8 alkyl group, or C1-8 alkoxy group.

Abstract: The present disclosure provides a method for forming an inorganic polymer material, including mixing 10 to 80 parts by weight of tetraalkoxysilane and 10 to 80 parts by weight of trialkoxysilane to form a mixture; and performing a reaction at pH of 0 to 4 by adding 5 to 30 parts by weight of a catalyst to the mixture to form an inorganic polymer material.

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

Abstract: A low stain and low mist adhesion coating. Micro- or nano-particles are treated with a hydrophobic agent and an additive to form larger microstructure with the hydrophobic agent and the additive bonded thereto forming a low stain and low mist adhesion coating material. A low stain and low mist adhesion coating formed from the material has a contact angle of at least 130°. In addition, the low stain and low mist adhesion coating has less than 60% mist adhesion area.

Abstract: A method for forming self-cleaning coating comprising hydrophobically-modified particles. Micro- or nano-particles are treated with a hydrophobic agent and an additive to form larger particles with the hydrophobic agent and the additive bonded thereto. A binder or crosslinker is attached to the larger particles by forming chemical bonds with at least one of the additive, the hydrophobic agent, and the particles, thus forming a coating material capable of forming self-cleaning coating.

Abstract: A method for forming a coating material capable of forming a hydrophobic, microstructured surface. The method comprises treating micro or nano-particles particles with a hydrophobic agent and an additive to form larger particles with the hydrophobic agent bonded thereto. The invention also comprises the coating material thus formed.

Abstract: This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), and the sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for Gate, in order to increase initial voltage, lower the surface states and decrease surface leakage current, which makes the MHEMT work in a range of high current density and high input power.

Abstract: A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

Abstract: This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), and the sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for Gate, in order to increase initial voltage, lower the surface states and decrease surface leakage current, which makes the MHEMT work in a range of high current density and high input power.

Abstract: A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.