Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Abstract: A display device includes a panel, a conductive layer, a first color filter array and a second color filter array. The panel has a display surface and multiple sub-pixel regions where the multiple sub-pixel regions and the conductive layer are on this display surface. The first color filter array including multiple first color filter elements is disposed on the conductive layer while the second color filter array including multiple second color filter elements is disposed on the first color filter array. One first overlaid region and one second overlaid region are defined by the orthogonal projections of the color filter elements within one of the sub-pixel regions. In one sub-pixel region, a section of the first overlaid region does not overlap a section of the second overlaid region.

Abstract: An electronic device able to be operated with a first state and a second state includes a substrate and electronic units. In a top view, the substrate has a first area in the first state and a second area in the second state, and the second area is greater than the first area. The electronic units are disposed on the substrate. The number of the electronic units being in a mode of ON in the second state is greater than that in the first state. The electronic device has a PPA_1 that is defined as a number of the electronic units being in the mode of ON per unit area of the substrate while in the first state, and a PPA_2 that is defined as a number of the electronic units being in the mode of ON per unit area of the substrate while in the second state, 1.5×PPA_1?PPA_2?0.5×PPA_1.

Abstract: Disclosed are a material analysis method based on the crystal structure database, a system, a computer-readable storage medium and an application. The material analysis method includes comparing experimental pattern information obtained from examination of a to-be-tested sample with theoretical pattern information calculated from material structure data in the crystal structure database, and obtaining crystallographic information and phase composition of the to-be-tested sample through intelligent analysis. The crystallographic information include space group, unit cell parameter, and specific coordinates of atoms in unit cell. The crystal structure database has material structure data obtained by experimental measurement and/or theoretical prediction, including chemical formula, space group, unit cell parameter and specific coordinates of atoms in unit cell.

Abstract: A semiconductor device is provided. The semiconductor device includes a carrier, an electronic component, an adapter, a first metal wire and a second metal wire. The electronic component is disposed on the carrier. The adapter is disposed on the carrier. The first metal wire connects the electronic component and the adapter. The second metal wire connects the adapter and the carrier.

Abstract: A touch sensing apparatus includes a panel with touch detection function and a touch detection circuitry. The touch detection circuitry is coupled to the panel, and is configured to detect a touch operation on the panel, record an error event of the touch sensing apparatus, and write the error event into an external storage medium via a data transmission interface thereof.

Abstract: A package comprises a substrate including a first surface, and an upper conductive layer arranged on the first surface, a first light-emitting unit arranged on the upper conductive layer, and comprises a first semiconductor layer, a first substrate, a first light-emitting surface and a first side wall, a second light-emitting unit, which is arranged on the upper conductive layer, and comprises a second light-emitting surface and a second side wall, a light-transmitting layer arranged on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit, a light-absorbing layer, which is arranged between the substrate and the light-transmitting layer in a continuous configuration of separating the first light-emitting unit and the second light-emitting unit from each other, and a reflective wall arranged on the first side wall, wherein a height of the reflective wall is lower than that of the light-absorbing layer.

Abstract: An optoelectronic device includes a photonic component. The photonic component includes an active side, a second side different from the active side, and an optical channel extending from the active side to the second side of the photonic component. The optical channel includes a non-gaseous material configured to transmit light.

Abstract: A resetting system includes a driver that controls a touchscreen, the driver including a driver communication interface that defines a bus for transferring a transfer signal; and an on-screen display (OSD) device that generates an OSD signal representing a predetermined reset image in response to a predetermined event, the OSD signal superimposing over pixels and graphics data to be rendered on the touchscreen; and a host that transfers the transfer signal to or from the driver, the host including a host communication interface that defines the bus for transferring the transfer signal to or from the driver.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: 0 ? ? ? T ? ? 1 T ? ? 2 ? A ? ( T ) ? dT - ? T ? ? 1 T ? ? 3 ? E ? ( T ) ? dT ? ? < 0.01 wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: A display device includes a first display unit emitting a green light having a first output spectrum corresponding to a highest gray level of the display device and a second display unit emitting a blue light having a second output spectrum corresponding to the highest gray level of the display device. The first output spectrum has a main wave with a first peak. The second output spectrum has a main wave with a second peak and a sub wave with a sub peak. The second peak corresponds to a main wavelength, the sub peak corresponds to a sub wavelength, and the main wavelength is less than the sub wavelength. An intensity of the second peak is greater than an intensity of the sub peak and an intensity of the first peak.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. A data storage structure overlies the first conductive structure. The data storage structure comprises a first dielectric layer on the first conductive structure and a second dielectric layer on the first dielectric layer. The first dielectric layer comprises a dielectric material and a first dopant having a concentration that changes from a top surface of the first dielectric layer in a direction towards the first conductive structure. A second conductive structure overlies the data storage structure.

Abstract: An electronic device includes a first insulating layer, a first conductive portion, a second conductive portion, a transistor, and an electronic unit. The first insulating layer has a first opening penetrating the first insulating layer along a first direction. The first conductive portion is disposed in the first opening. The second conductive portion is electrically connected to the first conductive portion. The transistor is electrically connected to the second conductive portion. The electronic unit is electrically connected to the first conductive portion. In a cross-sectional view of the electronic device, the electronic unit and the second conductive portion are disposed on two opposite sides of the first insulating layer respectively, the first conductive portion has a first length along a second direction perpendicular to the first direction, the second conductive portion has a second length along the second direction, and the first length is different from the second length.

Abstract: A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

Abstract: The present disclosure provides a base assembly of voice coil motor and a voice coil motor. The base assembly includes a base body having a first elastic piece connecting area, a lower elastic piece disposed on the first elastic piece connecting area, and a first terminal disposed in the base body. The first terminal has: a first conductive part disposed in the base body; a first terminal connecting part disposed on one side of the first conductive part and extending toward a direction away from the first conductive part, wherein a part of the first terminal connecting part protrudes from the first elastic piece connecting area and is contacted and connected with the lower elastic piece; and an engaging part disposed on one side of the first terminal connecting part and extending toward a direction away from the first terminal connecting part.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin over a substrate that both extend along a first direction. The method includes forming a dielectric fin extending along the first direction and is disposed between the first and second semiconductor fins. The method includes forming a dummy gate structure extending along a second direction and straddling the first and second semiconductor fins and the dielectric fin. The method includes removing a portion of the dummy gate structure over the dielectric fin to form a trench by performing an etching process that includes a plurality of stages. Each of the plurality of stages includes a combination of anisotropic etching and isotropic etching such that a variation of a distance between respective inner sidewalls of the trench along the second direction is within a threshold.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: The present disclosure provides a method for preparing lithium iron phosphate from ferric hydroxyphosphate, including: purifying ferrous sulfate to form a ferrous sulfate solution, adding hydrogen peroxide, phosphoric acid, an ammonium dihydrogen phosphate solution and ammonia water into the ferrous sulfate solution and then reacting to form a mixed slurry, holding the mixed slurry at a temperature for a period of time, and then washing with water and subjecting to press filtration to form ferric hydroxyphosphate precursors with different iron-phosphorus ratios; then flash drying, sintering at a high temperature, and pulverizing to obtain ferric hydroxyphosphate precursors with different iron-phosphorus ratios and different specific surface areas.

Abstract: A display device includes a flexible display panel having two surfaces opposite to each other, and a heat dissipation sheet disposed on one of the two surfaces of the flexible display panel and being foldable together with the flexible display panel. In a side view, the heat dissipation sheet includes at least one opening.

Abstract: A display device includes a display panel including a rollable portion and a non-rollable portion. The display panel includes a supporting structure including a groove disposed on a first side of the supporting structure, a substrate disposed on a second side of the supporting structure and the first side opposite to the second side, and a circuit board fixed onto a back of the display panel. The non-rollable portion has a first region. A first region of the circuit board is joined to the first region of the non-rollable portion. The non-rollable portion has a first end and a second end. The first end is connected to the rollable portion. The second end is connected to the circuit board.