Abstract: A manufacturing method of a thin film transistor (TFT) having low serial impedance is described. The method uses a back-side exposure and uses the active area as a hard mask; therefore, photomask usage may be reduced. On the other hand, a Si—Ge layer is used to react with the conductive layer deposited thereon after for forming a Ge-salicide layer. The method may reduce the required temperature of forming a Ge-salicide layer and the serial impedance.

Abstract: A dual-band FR4 chip antenna is disclosed. The present invention forms a meandering radiating metal line on a low-cost FR4 chip base, thereby achieving a dual-band operation. The present invention comprises: an FR4 chip base made of an FR4 material; a meandering radiating metal line; and a connecting point, wherein the meandering radiating metal line is formed on at least two surfaces of the FR4 chip base, and the connecting point is used for connecting the meandering radiating metal line to a signal transmission line. The present invention can cover two ISM (Industrial-Scientific-Medical) bands, such as those around 2450 MHz and 5800 MHz. The FR4 chip antenna in the present invention is not only easy to be integrated with microwave circuits, but also sturdy and cheap, and is further suitable for using the surface-mounting technology (SMT) to perform a mass production. In addition, the present invention has two separate wide bandwidths, and is suitable for dual-band operation.

Abstract: A color LCD panel in which a plurality of OLED are formed on the upper surface of the lower panel of the color LCD panel to be the back light source of the color LCD panel is disclosed in the invention. Each individual OLED corresponds to a pixel of the LCD panel in order to be the independent self-emitting light source of the pixel. Each OLED is always on and ready to emit one of the three primary colors, red, green, or blue. Thus, every pixel of the color LCD panel has its independent self-emitting light source. Therefore, the back light module and color filter in conventional color LCD panels are not needed.

Abstract: An organic backlight device for liquid crystal display application is provided. The organic backlight device has organic light emitting layers, which are arranged in such as linear arrangement and controlled by a driving circuit, to emit light at least three different bandwidths by turns, for example, in red, green and blue bandwidths. By emitting light with a high frequency by turns, persistence of color vision is produced to a viewer. A thin and light backlight source with high brightness and uniformity is therefore obtained.

Abstract: A polysilicon thin film transistor with a self-aligned LDD structure has a polysilicon layer formed on a transparent insulating substrate. The polysilicon layer consists of a channel region, an LDD structure on two sides of the channel region, and a source/drain region on two sides of the LDD structure. A gate insulating layer is formed on the polysilicon layer, a first metal layer is patterned on the gate insulating layer to cover the channel region, and a second metal layer is patterned on the first metal layer to cover the channel region.

Abstract: A method for manufacturing thin film transistor panels in order to obviate the lowstability of conventional laser annealing processes, and the resultant low quality of the produced polycrystal silicon thin film. According to the method of the invention, form a transparent insulator on the front surface of a silicon substrate. Form a thin film transistor structure and transparent electrode on the upper surface of the transparent insulator. Bond a transparent substrate onto the front surface of the silicon substrate. After that, remove a portion of the silicon substrate by polishing or etching the back of the silicon substrate to obtained a transparent thin film transistor panel. The transparent electrode can also be formed on the bottom surface of the transparent insulator. Also, the transparent substrate can be bonded onto the back of the silicon substrate. Then reduce the thickness of the silicon substrate to generate a crystal silicon thin film.

Abstract: A method for forming a thin film transistor (TFT) is disclosed. The invention uses metal electroless plating or chemical displacement processes to form metal clusters adjacent the sidewall of amorphous silicon active region pattern so as to crystallize the amorphous silicon amid the subsequently performed metal induced lateral crystallization (MILC) process. The amorphous silicon is crystallized to form polysilicon having parallel grains. Since the amorphous silicon will crystallize with a specific angle which is measured between the grain orientation and the side wall of the amorphous silicon, a tilt channel connecting the source and drain region of the TFT is utilized to upgrade the electron mobility across the tilt channel, wherein the grain orientation of polysilicon in the tilt channel perpendicular to a gate electrode which is subsequently formed above the tilt channel.

Abstract: A full-color LED display includes red, green and blue LED elements. A first substrate is used to form red and green LED elements which are then covered by a first passivation layer. A second substrate is bonded to the passviation layer and polished as a thin substrate layer. A blue LED element is fabricated on the thin substrate layer. The three LED elements are then covered by a second passivation layer to construct a full-color LED device. A full-color, high resolution and high brightness LED display is formed by a plurality of full-color LED devices arranged in rows and columns in a matrix form.

Abstract: Disclosed is a surface treatment agent for aqueous ink receiving media such as ink jet recording paper, printing sheets, coating materials and so on. The surface treatment agent according to the invention comprises a water-based resin and a carboxylic acid-containing hydrophilic sulfopolyester which provides superior adhesion and water resistance. With the superior adhesion properties, the surface treatment agent can be directly coated on substrates without the inconvenience of primer coating. The surface treatment agent of the invention is suitable for aqueous ink jet printing, coating, or recording media, particularly those of ink jet printers and ink jet plotters.

Abstract: An antenna includes a substrate, a microstrip patch or a slot, a feed line connected to the microstrip patch or slot, and a diffraction grating modulator mounted on the substrate and formed with a spatial periodic structure. The microstrip patch or slot radiates and receives electromagnetic waves when a signal between the substrate and the microstrip patch or slot satisfies resonance conditions. The diffraction grating modulator diffracts the electromagnetic waves in a predetermined manner so as to improve antenna gain and side lobe bandwidth and modulate directionality of the antenna.

Abstract: Print enhancement circuitry to enhance the printed image produced by a laser beam printer is interposed between the character generator circuits and the laser drive circuits to modify the laser drive signals provided by the character generator circuits. Bit data representing successive lines of the bit map for a desired image are stored in a first-in first-out (FIFO) buffer. The bit pattern sample window having a central cell (bit) and a selected (arbitrary) number of neighboring bits is compared to a number of matching bit patterns or templates, each of which is associated with an error element or cell. When a logic matching network detects a match, a modification signal associated with a unique compensation cell (bit) is generated. The sample window central bit is then replaced (modified) with the unique compensation bit required by the matching template.