Abstract: Methods and apparatus for controlling plasma in a process chamber leverage an RF termination filter which provides an RF path to ground. In some embodiments, an apparatus may include a DC filter configured to be electrically connected between a DC power supply and electrodes embedded in an electrostatic chuck where the DC filter is configured to block DC current from the DC power supply from flowing through the DC filter and an RF termination filter configured to be electrically connected between the DC filter and an RF ground of the process chamber where the RF termination filter is configured to adjust an impedance of the electrodes relative to the RF ground.

Abstract: A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

Abstract: A phase change material, a phase change memory cell, and a preparation method thereof. The phase change material comprises elements tantalum, antimony and tellurium, the phase change material having a chemical formula of TaxSbyTez, wherein x, y, and z represent atomic ratios of the elements respectively; and 1?x?25, 0.5?y:z?3, and x+y+z=100. The phase change thin film material TaxSbyTez has a high phase change speed, outstanding thermal stability, strong data retention capability, a long cycle life, and a high yield. Ta5.7Sb37.7Te56.6 has ten-year data retention capability at 165° C.; and applying same in a device cell of a phase change memory achieves an operating speed of 6 ns and endurance of more than 1 million write-erase cycles. The crystal grains of the phase change material TaxSbyTez of the present disclosure are small, and after annealing treatment at 400° C. for 30 minutes, the grain size is still smaller than 30 nm.

Abstract: The present disclosure provides a chassis and an electronic device applying the chassis. The chassis includes: a chassis body; the chassis body is a 2U chassis body or a 4U chassis body; a hard disk module, installed in a front end area of the chassis body; a power supply module, installed at one side of a rear end area of the chassis body; a controller module, installed in a remaining rear end area of the chassis body except the power supply module, parallel with the power supply module, and including a plurality of pluggable functional modules; a middle board, connected with the power supply module, the hard disk module, and the control module, respectively, to realize the electrical connection between the power supply module, the hard disk module, and the control module. The present disclosure can improve the versatility of the chassis modules.

Abstract: The present disclosure provides a dual-backplane structure and electronic device using the same. The dual-backplane structure includes: a first backplane having an opening, and the front side of the first backplane includes at least one connector connected with a connector of the second assembly surface on a main board of a control module; a second backplane disposed on the back of the first backplane, the front side of the second backplane includes a connector connected with a connector of the first assembly surface on a main board of a control module; the back side of the second backplane includes a plurality of hard disk connectors for connecting with the hard disk module. At least one connector on the front side of the second backplane is connected with the connector corresponding to the first assembly surface on the main board through the opening of the first backplane.

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

Abstract: An optical device includes an LED chip, a visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the visible-light luminescent material simultaneously.

Abstract: An optical device includes an LED chip, a light absorber and/or visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared luminescent material and the light absorber and/or visible-light luminescent material in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the light absorber and/or visible-light luminescent material simultaneously.

Abstract: The present invention discloses a red light and near-infrared light-emitting material and a light-emitting device. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, xA2O3.yIn2O3.bR2O3, wherein the element A is Sc and/or Ga; the element R is one or two of Cr, Yb, Nd or Er and necessarily includes Cr; and 0.001?x?1, 0.001?y?1, 0.001?b?0.2, and 0.001?b/(x+y)?0.2. The light-emitting material can be excited by a technically mature blue light source to emit light with a high-intensity wide-spectrum or multiple spectra. Compared with existing materials, the light-emitting material has higher luminescent intensity. The light-emitting device uses an LED chip to combine an infrared light-emitting material and a visible light light-emitting material. In this way, the same LED chip can emit near-infrared light and visible light at the same time, which greatly simplifies the packaging process and reduces the packaging cost.

Abstract: A binding band adjusting device and a head-mounted display device having the binding band adjusting device are provided. The binding band adjusting device includes a support assembly provided with a through hole, a rotating assembly matching the through hole, two side binding bands connected to the rotating assembly, a trigger assembly disposed on the support assembly and used for being triggered by the rotating assembly, and a front-back binding band that can fix with respect to the trigger assembly; when the rotating assembly rotates in different directions with respect to the through hole, the two side binding bands expand and contract with respect to the support assembly; when the rotating assembly moves in the axial direction of the through hole and triggers the trigger assembly, the trigger assembly loosens or clamps the front-back binding band.

Abstract: Disclosed are a red light and near-infrared light-emitting material and a preparation method thereof, and a light-emitting device including the light-emitting material. The red light and near-infrared light-emitting material contains a compound represented by a molecular formula, aSc2O3.Ga2O3.bR2O3, wherein the element R includes one or two of Cr, Ni, Fe, Yb, Nd or Er; 0.001?a?0.6; and 0.001?b?0.1. The light-emitting material can be excited by a spectrum having a wide wavelength range (ultraviolet light or purple light or blue light) to emit light with a wide spectrum of 650 nm to 1700 nm or multiple spectra, thus having higher light-emitting intensity.

Abstract: The present disclosure provides a chassis and an electronic device applying the chassis. The chassis includes: a chassis body; the chassis body is a 2U chassis body or a 4U chassis body; a hard disk module, installed in a front end area of the chassis body; a power supply module, installed at one side of a rear end area of the chassis body; a controller module, installed in a remaining rear end area of the chassis body except the power supply module, parallel with the power supply module, and including a plurality of pluggable functional modules; a middle board, connected with the power supply module, the hard disk module, and the control module, respectively, to realize the electrical connection between the power supply module, the hard disk module, and the control module. The present disclosure can improve the versatility of the chassis modules.

Abstract: The present disclosure provides a dual-backplane structure and electronic device using the same. The dual-backplane structure includes: a first backplane having an opening, and the front side of the first backplane includes at least one connector connected with a connector of the second assembly surface on a main board of a control module; a second backplane disposed on the back of the first backplane, the front side of the second backplane includes a connector connected with a connector of the first assembly surface on a main board of a control module; the back side of the second backplane includes a plurality of hard disk connectors for connecting with the hard disk module. At least one connector on the front side of the second backplane is connected with the connector corresponding to the first assembly surface on the main board through the opening of the first backplane.

Abstract: A method for constructing a meshed model and a discrete chromatography of eight primary color HSB color space is provided. By a meshed digital model and a discrete algorithm of color space, the color value and the color distribution in any point, line, surface and space area in the HSB color space can be quickly obtained based on color values of eight primary colors and coordinate values of mesh points in the HSB color space, thereby (i) realizing the full color gamut discrete chromatography of the HSB color space, (ii) realizing the visualization of the full color gamut of the color space, and (iii) improving the work efficiency of color matching.

Abstract: A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

Abstract: A piezoelectric device includes a substrate, a thermal oxide layer on the substrate, a metal or metal oxide adhesion layer on the thermal oxide layer, a lower electrode on the metal oxide adhesion layer, a seed layer on the lower electrode, a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer on the seed layer, and an upper electrode on the PMNPT piezoelectric layer.

Abstract: A deep state space generative model is augmented with intervention prediction. The state space model provides a principled way to capture the interactions among observations, interventions, critical event occurrences, true states, and associated uncertainty. The state space model can include a discrete-time hazard rate model that provides flexible fitting of general survival time distributions. The state space model can output a joint prediction of event risk, observation and intervention trajectories based on patterns in temporal progressions, and correlations between past measurements and interventions.

Abstract: A method for constructing a meshed model and a discrete chromatography of eight primary color HSB color space is provided. By a meshed digital model and a discrete algorithm of color space, the color value and the color distribution in any point, line, surface and space area in the HSB color space can be quickly obtained based on color values of eight primary colors and coordinate values of mesh points in the HSB color space, thereby (i) realizing the full color gamut discrete chromatography of the HSB color space, (ii) realizing the visualization of the full color gamut of the color space, and (iii) improving the work efficiency of color matching.

Abstract: In some aspects, the present disclosure relates to a method for identifying the type of the unit by camera.

Abstract: A device includes a drafting and twisting system. The drafting and twisting system includes a first stage drafting unit, a successive second stage drafting unit and an integrating and twisting unit. The first stage drafting unit includes a combination of back rollers and a middle roller. The second stage drafting unit includes a front roller and the middle roller. Blending proportion and linear densities of the four ingredients are dynamically adjusted by the first stage asynchronous drafting mechanism, and reference linear density is adjusted by the second stage synchronous drafting mechanism. The invention can not only accurately control a linear density change, but also accurately control color change of the yarn. Further, rotation rate of the middle roller is constant, ensuring a reproducibility of patterns and colors of the yarn with changing linear density.