Abstract: The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.

Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.

Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology. The display substrate includes a base substrate and a thin film transistor array. The thin film transistor array includes a plurality of thin film transistors. A first electrode in each thin film transistor includes a first portion and a second portion having a height difference therebetween, and a height of the second portion is greater than a height of the first portion in a direction perpendicular to the base substrate.

Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.

Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.

Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.

Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.

Abstract: A flexible display panel and a film-like structure are provided according to the present disclosure. The flexible display panel includes a flexible display structure and a film-like structure arranged on at least one side of the flexible display structure. The film-like structure includes: a first flexible layer, a second flexible layer, a filler sealed between the first flexible layer and the second flexible layer, and a heater configured to heat the filler. A hardness of the filler varies with a temperature of the filler.

Abstract: A thin film transistor (TFT), a manufacturing method, an array substrate, a display panel, and a device is disclosed. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.

Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and supplying a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.

Abstract: A display panel includes a substrate; a conductive layer disposed on the substrate; a gate insulating layer disposed on the conductive layer; a gate layer disposed on the gate insulating layer, wherein the gate layer has a thickness larger than a thickness of the conductive layer; a groove extending toward the substrate and punching through the gate layer, orthographic projections of the groove and the conductive layer on the substrate overlapping, and gate layers separated on two sides of the groove being connected to the conductive layer; an interlayer dielectric layer disposed on a side of the gate layer away from the substrate and covering the conductive layer and filling the groove; and an auxiliary electrode layer disposed on the interlayer dielectric layer, wherein the orthographic projections of the auxiliary electrode layer and the gate layer on substrate do not overlap, and the orthographic projections of the auxiliary electrode layer and the groove on the substrate overlap.

Abstract: Provided is a thin film transistor, including: a conductive light shielding layer; a metal oxide layer arranged on the light shielding layer; a buffer layer, an active layer, a gate insulating layer, a gate electrode, and an interlayer insulating layer arranged in sequence on the metal oxide layer, the interlayer insulating layer and the buffer layer comprising a first via hole and a second via hole for exposing the active layer, and a third via hole for exposing the metal oxide layer, in which a portion of the metal oxide layer exposed through the third via hole is a conductive portion, and other portions are insulative; and a source electrode and a drain electrode arranged on the interlayer insulating layer, in which the source electrode is connected to the active layer through the first via hole, and the drain electrode is connected to the active layer through the second via hole and connected to the conductive portion through the third via hole.

Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.

Abstract: The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.

Abstract: A flexible display panel and a film-like structure are provided according to the present disclosure. The flexible display panel includes a flexible display structure and a film-like structure arranged on at least one side of the flexible display structure. The film-like structure includes: a first flexible layer, a second flexible layer, a filler sealed between the first flexible layer and the second flexible layer, and a heater configured to heat the filler. A hardness of the filler varies with a temperature of the filler.

Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.

Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.

Abstract: A fabrication method for fabricating a thin-film transistor includes: forming a light shielding layer on a substrate; forming a buffer layer covering the light shielding layer, and forming a semiconductor material layer stacked on a surface of the buffer layer away from the substrate; forming a through hole penetrating through the buffer layer and the semiconductor material layer; patterning the semiconductor material layer to form an active layer covering a partial region of the buffer layer; forming a gate insulator layer on a surface of the active layer away from the substrate and a gate stacked on a surface of the gate insulator layer away from the substrate; forming a source and a drain on the surface of the buffer layer away from the substrate; and forming a dielectric layer covering the gate, the source, the drain, and the buffer layer, and being recessed into the through hole to form a groove.

Abstract: The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.

Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and suppling a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.