Abstract: A linker peptide for constructing a fusion protein. The linker peptide comprises a flexible peptide and a rigid peptide. The flexible peptide consists of one or more flexible units. The rigid peptide consists of one or more rigid units. The flexible unit comprises two or more amino acid residues selected from Gly, Ser, Ala, and Thr. The rigid unit comprises a human chorionic gonadotropin ?-subunit carboxy-terminal peptide (CTP) bearing a plurality of glycosylation sites. The linker peptide can more effectively eliminate mutual steric hindrance of two fusion molecules, decreasing a reduction/loss of polymerization or activity resulting from improper folding of an active protein or a conformational change. On the other hand, the negatively charged, highly sialylated CTP can resist renal clearance, further prolonging a half-life of a fused molecule and enhancing bioavailability of a fused protein.

Abstract: A graph data processing method includes: acquiring target graph data to be processed; compiling statistics on the target graph data according to a first preset rule, so as to divide the target graph data into a plurality of graph data blocks and determine a boundary value and weight of each of the plurality of graph data blocks; and storing the boundary value and weight of each of the plurality of graph data blocks in a corresponding memory according to a second preset rule, so as to schedule the target graph data during a graph calculation process by use of the boundary values and the weights.

Abstract: The present disclosure relates to a lateral sleeve pipe drill and a operating method, belong to the field of surgical instrument technologies, and solves the problems that a bone passage cannot be effectively corrected and is liable to be corrected excessively, and correction is time-consuming and damages important functional bone tissue morphology. The lateral sleeve pipe drill is of a hollow cylindrical shape and includes a first end and a second end. An outer wall of the first end is provided with a correction portion for correcting the bone passage. The first end is arranged in a human body and is of a particular shape adapted to different surgical methods, a surgical approach direction, and a human body internal structure.

Abstract: A field programmable gate array (FPGA) dynamic reconfiguration method, apparatus, device and readable storage medium are provided.

Abstract: A plasma scalpel head for spinal percutaneous puncture and an operation method of the plasma scalpel head for spinal percutaneous puncture are provided. The plasma scalpel head for spinal percutaneous puncture includes a needle core. The needle core includes a main ablation electrode and a needle core body. The main ablation electrode is arranged at an ablation end of the plasma scalpel head. The needle core body is externally provided with a first insulating layer. The first insulating layer is externally provided with a reflow electrode layer. A part of the first insulating layer that is not covered with the reflow electrode layer forms a main ablation electrode protection insulating ring. The reflow electrode layer is provided thereon with a second insulating layer, and a part of the reflow electrode layer that is not covered with the second insulating layer forms a reflow electrode.

Abstract: An ultrasound-induced positioning type puncture assembly and a sleeve type small needle knife are provided. The small needle knife includes a cutting assembly and a puncture assembly. The puncture assembly includes a puncture needle core and a puncture sleeve; an annular groove facing an ultrasound equipment probe is formed in an outer wall of the puncture sleeve along a circumferential direction; and a cross section of the annular groove is of lug-shaped.

Abstract: A field programmable gate array (FPGA) dynamic reconfiguration method, apparatus, device and readable storage medium are provided.

Abstract: A germanium single-crystal wafer comprises silicon with an atomic concentration of from 3×1014 atoms/cc to 10×1013 atoms/cc, boron with an atomic concentration of from 1×1016 atoms/cc to 10×1018 atoms/cc, and gallium with an atomic concentration of from 1×1016 atoms/cc to 10×1019 atoms/cc. Further provided are a method for preparing the germanium single-crystal wafer, a method for preparing a germanium single-crystal ingot, and the use of the germanium single-crystal wafer for increasing the open-circuit voltage of a solar cell. The germanium single-crystal wafer has an improved electrical property in that it has a smaller difference in resistivity and carrier concentration.

Abstract: A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

Abstract: An injection device, which comprises a nozzle and which is used for an underground coal gasification process; the nozzle and the injection device are used for continuously injecting a high-concentration oxidant into an underground coal layer during the underground coal gasification process, in which case the high-concentration oxidant may be used safely and steadily to obtain a high-quality and stable product gas, while a retraction cycle and/or a retraction distance of a retraction method in the existing technology may be greatly shortened, thus achieving the continuous and steady operation of the underground coal gasification process. Also disclosed is a method for operating the injection device.

Abstract: A monocrystalline germanium wafer that increases the open-circuit voltage of multijunction solar cells, a method for preparing the monocrystalline germanium wafer and a method for preparing an ingot from which the monocrystalline germanium wafer is prepared. The monocrystalline germanium wafer that increases the open-circuit voltage of the bottom cell of multijunction solar cells is prepared by adjusting the amounts of the co-dopants silicon and gallium in the monocrystalline germanium wafer, the ratio of silicon to gallium in the preparation of the monocrystalline germanium.

Abstract: An ignition device for an underground coal gasification process, and an underground coal gasification method for carrying out ignition. The ignition device comprises a conveying device, a cut-off device (7), an ignition detonator (6) and one or more fuel packs (5), sequentially connected. The fuel packs are serially connected with each other. The conveying device is a coiled tubing/conjugation tube (12), or an integrated signal cable (21). The ignition detonator runs through one or more fuel packs and ignites the one or more fuel packs starting from the top of the device in a delayed manner. The cut-off device breaks off after the ignition detonator is started, so that ignition device components comprising the conveying device are at least withdrawn to a safe position. Each fuel pack comprises thermite and is used for igniting an underground coal seam (1) after the fuel pack is ignited.

Abstract: A production well apparatus for underground coal gasification and an underground coal gasification method using same. The production well apparatus comprises a well head apparatus, a sleeve (8), a product pipe (1), a coolant pipe (3), and a monitoring meter system (7). Coolant is injected, during underground coal gasification, to be in contact and mixed with product gas, and the product gas is discharged after cooled, such that the operation is safer and more controllable. Moreover, most of the components of the production well apparatus can be completely or partially recycled and reused after the gasification is completed.

Abstract: An oxidant injection device for an underground coal gasification process includes an oxidant pathway which includes a swivel joint, coiled tubing, and a mechanical shear-off device which are in gas tight connection with each other in that sequence. Attached to the mechanical shear-off device is an oxidant nozzle, wherein the shear-off device is adapted to shear the oxidant nozzle to allow retraction of the coiled tubing when necessary, and wherein the swivel joint causes the surface oxidant source to be in gas tight connection with the coiled tubing reel center shaft, thereby allowing continuous oxidant injection during the process of moving the oxidant nozzle via the movement of the coiled tubing when rotating the coiled tubing reel.

Abstract: An injection device, which comprises a nozzle and which is used for an underground coal gasification process; the nozzle and the injection device are used for continuously injecting a high-concentration oxidant into an underground coal layer during the underground coal gasification process, in which case the high-concentration oxidant may be used safely and steadily to obtain a high-quality and stable product gas, while a retraction cycle and/or a retraction distance of a retraction method in the existing technology may be greatly shortened, thus achieving the continuous and steady operation of the underground coal gasification process. Also disclosed is a method for operating the injection device.

Abstract: A production well apparatus for underground coal gasification and an underground coal gasification method using same. The production well apparatus comprises a well head apparatus, a sleeve (8), a product pipe (1), a coolant pipe (3), and a monitoring meter system (7). Coolant is injected, during underground coal gasification, to be in contact and mixed with product gas, and the product gas is discharged after cooled, such that the operation is safer and more controllable. Moreover, most of the components of the production well apparatus can be completely or partially recycled and reused after the gasification is completed.

Abstract: An ignition device for an underground coal gasification process, and an underground coal gasification method for carrying out ignition by using the same. The ignition device comprises a conveying device, a cut-off device (7), an ignition detonator (6) and one or more fuel packs (5), all of which are sequentially connected. The multiple fuel packs are serially connected with each other. The conveying device is a coiled tubing/conjugation tube (12), or an integrated signal cable (21). The ignition detonator runs through one or more fuel packs and ignites the one or more fuel packs starting from the top of the device in a delayed manner. The cut-off device breaks off after the ignition detonator is started, so that ignition device components comprising the conveying device are at least withdrawn to a safe position. Each fuel pack comprises thermit and is used for igniting an underground coal seam (1) after the fuel pack is ignited.

Abstract: This invention provides an oxidant injection device for an underground coal gasification process. The oxidant injection device includes an oxidant pathway which includes a swivel joint, coiled tubing, and a mechanical shear-off device which are in gas tight connection with each other in that sequence. Attached to the mechanical shear-off device is an oxidant nozzle, wherein the shear-off device is adapted to shear the oxidant nozzle to allow retraction of the coiled tubing when necessary, and wherein the swivel joint causes the surface oxidant source to be in gas tight connection with the coiled tubing reel centre shaft, thereby allowing continuous oxidant injection during the process of moving the oxidant nozzle via the movement of the coiled tubing when rotating the coiled tubing reel.

Abstract: A IIIA-VA group semi-conductor single crystal substrate (2) has one of or both of the following two properties: an oxygen content of 1.6×1016-5.6×1017 atoms/cm3 in a range from the surface to a depth of 10 ?m of the wafer, and an electron mobility of 4,800 cm2/V·s-5,850 cm2/V·s. Further, a method for preparing the semi-conductor single crystal substrate (2) comprises: placing a single crystal substrate (2) to be processed in a container (4); sealing said container (4), and keeping said single crystal substrate (2) to be processed at a temperature in the range of from the crystalline melting point ?240° C. to the crystalline melting point ?30° C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000° C. to 1,200° C. for 5 hours to 20 hours.

Abstract: A method of controlling oxygen concentration in III-V compound semiconductor substrate comprises providing a plurality of III-V crystal substrates in a container, providing a predetermined amount of material in the container. Atoms of the predetermined amount of material having a high chemical reactivity with oxygen atoms. The method further comprises maintaining a predetermined pressure within the container and annealing the plurality of III-V crystal substrates to yield an oxygen concentration in the crystal substrates. The oxygen concentration is associated with the predetermined amount of material.