Abstract: Semiconductor structures and methods of forming the same are provided. A method according to the present disclosure includes forming a stack of epitaxial layers over a substrate, forming a first fin-like structure and a second fin-like structure from the stack, forming an isolation feature between the first fin-like structure and the second fin-like structure, forming a cladding layer over the first fin-like structure and the second fin-like structure, conformally depositing a first dielectric layer over the cladding layer, depositing a second dielectric layer over the first dielectric layer, planarizing the first dielectric layer and the second dielectric layer until the cladding layer are exposed, performing an etch process to etch the second dielectric layer to form a helmet recess, performing a trimming process to trim the first dielectric layer to widen the helmet recess, and depositing a helmet feature in the widened helmet recess.

Abstract: An image processing system includes a memory, a data slicer and an image processor. The data slicer divides each of current image data and adjacent image data into a first portion and a second portion to be stored into the memory. The image processor reads from the memory the first portion and the second portion of the current image data and the first portion of the adjacent image data for image processing.

Abstract: An image processing system includes a memory, a data slicer and an image processor. The data slicer divides each of current image data and adjacent image data into a first portion and a second portion to be stored into the memory. The image processor reads from the memory the first portion and the second portion of the current image data and the first portion of the adjacent image data for image processing.