Patents by Inventor Yuanwen Jiang

Yuanwen Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DIRECTLY PHOTO-PATTERNABLE, STRETCHABLE, ELECTRICALLY CONDUCTIVE POLYMER
    Publication number: 20200401042
    Abstract: One or more embodiments relate to an electrically conductive polymer with a crosslinkable additive. The electrically conductive polymer is a directly photopatternable Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) PEDOT:PSS film with cross-linked network made of a plurality of monomers. The directly photopatternable PEDOT:PSS film PEDOT as such has a better conductivity and stretchability compared to its other counterparts. The directly photopatternable PEDOT:PSS film can further be supplemented with poly(ethylene glycol) diacrylate (PEGDA) which can help with the removal of PSS. Advantageously, the PEGDA supplemented PEDOT:PSS film can exhibit a larger charge storage capacity.
    Type: Application
    Filed: May 5, 2020
    Publication date: December 24, 2020
    Applicant: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
    Inventors: Zhenan Bao, Yuanwen Jiang
  • Methods and Systems for Modulating Cellular Activation
    Publication number: 20200390803
    Abstract: This disclosure relates to methods for modulating activity of a cell capable of being activated by light and treating diseases with such methods. The disclosure also provides systems suitable for use in such methods, particularly systems having silicon nanostructures.
    Type: Application
    Filed: February 19, 2019
    Publication date: December 17, 2020
    Inventors: Bozhi Tian, Francisco Bezanilla, Erin Adams, Ramya Parameswaran, Yuanwen Jiang, João L. Carvalho-de-Souza, Kelliann C. Koehler, Michael G. Burke
  • Amorphous, porous silicon materials and related methods
    Patent number: 10663450
    Abstract: Provided herein are Si-based materials, methods of making the Si-based materials, and methods for using the Si-based materials. In embodiments, a silicon-based material comprises an aggregate of particles, the particles comprising an ordered array of nanostructures, the nanostructures comprising amorphous silicon, wherein at least some pairs of adjacent nanostructures are connected by one or more bridges comprising amorphous silicon, the one or more bridges extending from the surface of one nanostructure of the pair to the surface of the other nanostructure in the pair.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: May 26, 2020
    Assignee: The University of Chicago
    Inventors: Bozhi Tian, Francisco Bezanilla, Yuanwen Jiang, João L. Carvalho-de-Souza
  • AMORPHOUS, POROUS SILICON MATERIALS AND RELATED METHODS
    Publication number: 20170363607
    Abstract: Provided herein are Si-based materials, methods of making the Si-based materials, and methods for using the Si-based materials. In embodiments, a silicon-based material comprises an aggregate of particles, the particles comprising an ordered array of nanostructures, the nanostructures comprising amorphous silicon, wherein at least some pairs of adjacent nanostructures are connected by one or more bridges comprising amorphous silicon, the one or more bridges extending from the surface of one nanostructure of the pair to the surface of the other nanostructure in the pair.
    Type: Application
    Filed: June 14, 2017
    Publication date: December 21, 2017
    Inventors: Bozhi Tian, Francisco Bezanilla, Yuanwen Jiang, João L. Carvalho-de-Souza