Abstract: A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.

Abstract: The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto.

Abstract: The present invention is directed to an MTJ memory element including a magnetic free layer structure which comprises one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic

Abstract: A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths <50 nm when PMA is greater than the FL self-demag field. Effective bias field is rather insensitive to sensor aspect ratio which makes tall stripe and narrow width sensors a viable approach for high RA TMR configurations. Sensor sidewalls may extend into the seed layer or bottom shield.

Abstract: MRAM devices that are switched by unipolar electron flow are described. Embodiments use arrays of cells that include a diode or transistor with a pMTJ. The switching between the high and low resistance states of the pMTJ is achieved by electron flow in the same direction, i.e. a unipolar flow. Embodiments of the invention include methods of operating unipolar MRAM devices that include a read step after a write step to verify the operation. Embodiments also include methods of operating unipolar MRAM devices that include an iterative stepped-voltage write process that includes a plurality of write-read steps that begin with a selected voltage for the write pulse for the first iteration and gradually increase the voltage for the write pulse for the next iteration until a successful read operation occurs.

Abstract: Methods to provide customized skin care by using specimen dispensing device to dispense specimens from removable dispensers for the purpose of treating skin of a user are presented. Methods to utilize the embedded memory and electrical interface of the dispensing device and dispensers to produce customizable skin care products that give better skin treatment results are also presented. The invention may also be applied to health care and personal care needs.

Abstract: The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers.

Abstract: An electronic skin treatment device with an integrated specimen dispenser is disclosed, with which specimen dispense can be concurrently applied to target skin area while ultrasonic vibrations, mechanical massaging motions, galvanic stimulations, or light illuminations are used and as such a customizable, easier and better skin beautification can be achieved.

Abstract: Techniques provided herein use aggregate endpoints in a virtual overlay network. In general, aggregate endpoints operate as a single receiving entity for certain packets/frames sent between different physical proximities of the virtual overlay network.

Abstract: In one embodiment, a period between periodic transmissions of protocol data units (PDUs) used to form or maintain a link aggregation group is initially set to a fixed value. When a stress condition is detected, the period between periodic transmissions of PDUs is increased from the initial value. When the stress condition is determined to have eased, the period between periodic transmissions of PDUs is reduced back toward the fixed value.

Abstract: The current invention relates to the method to achieve artificial vision with using MEMS based mirror array to directly project image upon the retina of a human eye. Further, it relates to the method to detect the real-time focal length change of the eye lens and modify the MEMS based mirror array angular position configurations to change image projected upon the retina to achieve re-focusable artificial vision.

Abstract: The present invention is directed to a magnetic random access memory (MRAM) comprising an MRAM die having a front side that includes therein a plurality of perpendicular magnetic tunnel junction (MTJ) memory elements and a back side; and a sheet of permanent magnet disposed in close proximity to the MRAM die with a sheet surface facing the front side or back side of the MRAM die. The sheet of permanent magnet has a permanent magnetization direction substantially perpendicular to the sheet surface facing the MRAM die and exerts a magnetic field that eliminate or minimize the offset field of the magnetic free layer. The MRAM die and the sheet of permanent magnet may be encapsulated by a package case. The MRAM may further comprise a soft magnetic shield disposed on a side of the MRAM die opposite the sheet of permanent magnet.

Abstract: A spin transfer oscillator (STO) with a seed/FGL/spacer/SIL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)YFeCo laminated field generation layer (FGL). The spin injection layer (SIL) may be laminated with a (A1/A2)XFeCo configuration. The FeCo layer in the SIL is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The (A1/A2)Y laminate (y=5 to 30) in the FGL may be exchange coupled with a high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO is typically formed between a main pole and trailing shield in a write head.

Abstract: The present invention is directed to a magnetic random access memory (MRAM) comprising an MRAM die having a front side that includes therein a plurality of perpendicular magnetic tunnel junction (MTJ) memory elements and a back side; and a sheet of permanent magnet disposed in close proximity to the MRAM die with a sheet surface facing the front side or back side of the MRAM die. The sheet of permanent magnet has a permanent magnetization direction substantially perpendicular to the sheet surface facing the MRAM die and exerts a magnetic field that eliminate or minimize the offset field of the magnetic free layer. The MRAM die and the sheet of permanent magnet may be encapsulated by a package case. The MRAM may further comprise a soft magnetic shield disposed on a side of the MRAM die opposite the sheet of permanent magnet.

Abstract: The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure in between a seed layer and a cap layer. The MTJ structure includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from the magnetic reference layer structure by an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by an intermediate magnetic reference layer. The first, second, and intermediate magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof.

Abstract: The present invention is directed to a magnetic random access memory comprising a first magnetic tunnel junction (MTJ) including a first magnetic reference layer and a first magnetic free layer with a first insulating tunnel junction layer interposed therebetween; a second MTJ including a second magnetic reference layer and a second magnetic free layer with a second insulating tunnel junction layer interposed therebetween; and an anti-ferromagnetic coupling layer formed between the first and second variable magnetic free layers. The first and second magnetic free layers have a first and second magnetization directions, respectively, that are perpendicular to the layer planes thereof. The first magnetic reference layer has a first pseudo-fixed magnetization direction substantially perpendicular to the layer plane thereof.

Abstract: A spin-transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bilayer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.

Abstract: The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers.

Abstract: A framework is described herein for identifying implicit assumptions associated with an SDK and its accompanying documentation (e.g., dev guide). An implicit assumption is information that is not expressly stated in the documentation, but which would be useful in assisting an application developer in building an application. The framework also describes a systematic approach for identifying one or more vulnerability patterns based on the identified implicit assumptions. An application developer may run a test on an application that is being developed to ensure that it does not have any deficiency which matches a vulnerability pattern.

Abstract: The present invention is directed to a spin transfer torque magnetic random access memory (STTMRAM) element comprising a composite free layer including one or more stacks of a bilayer unit that comprises an insulator layer and a magnetic layer with the magnetic layer having a variable magnetization direction substantially perpendicular to a layer plane thereof; a magnetic pinned layer having a first fixed magnetization direction substantially perpendicular to a layer plane thereof; a tunnel barrier layer formed between the composite free layer and the magnetic pinned layer; and a magnetic fixed layer coupled to the magnetic pinned layer through an anti-ferromagnetic coupling layer. The magnetic fixed layer has a second fixed magnetization direction that is substantially perpendicular to a layer plane thereof and is substantially opposite to the first fixed magnetization direction.