Abstract: The present disclosure provides a method for increasing luminescence uniformity and reducing afterglow of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material and a detector. Sc ions are doped into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of active Ce ions is increased by a radius compensation effect of Sc—Ce ions and adjustment of lattice parameters, thereby the luminescence uniformity of the crystal is increased and the energy resolution is optimized; and at the same time, the potential barrier for Gd ions entering the octahedral site is increased, thereby the probability of the Gd ions entering the octahedral site is reduced, the density of point defects in the crystal is decreased, and the afterglow intensity is reduced. A general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {Gd1-x-y-pScxCeyMep}3[Al1-q]5O12, 0<x?0.1, 0<y<0.02, 0?p?0.

Abstract: The present disclosure provides a method for increasing luminescence uniformity and reducing afterglow of a Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal, a crystal material and a detector. Sc ions are doped into the crystal material, and the Sc ions occupy at least an octahedral site. The effective segregation coefficient of active Ce ions is increased by a radius compensation effect of Sc—Ce ions and adjustment of lattice parameters, thereby the luminescence uniformity of the crystal is increased and the energy resolution is optimized; and at the same time, the potential barrier for Gd ions entering the octahedral site is increased, thereby the probability of the Gd ions entering the octahedral site is reduced, the density of point defects in the crystal is decreased, and the afterglow intensity is reduced. A general formula of the Ce-doped gadolinium-aluminum-gallium garnet structure scintillation crystal is {Gd1-x-y-pScxCeyMep}3[Al1-q]5O12, 0<x?0.1, 0<y<0.02, 0?p?0.

Abstract: Provided are a device and a method for synthesis of a gallium-containing garnet-structured scintillator polycrystalline material. The synthesis device includes a polycrystalline material synthesis chamber (7) made of a thermal insulation material (1); a crucible (3) arranged at the center of the bottom of the polycrystalline material synthesis chamber; an induction coil (2) annularly arranged outside the polycrystalline material synthesis chamber at a position with a height corresponding to that of the crucible; an arc heating device (4) arranged on a central axis of the induction coil in the polycrystalline material synthesis chamber, so as to heat and melt raw materials at the center of the crucible by means of the high temperature generated by arc discharge; the induction coil is connected to a RF induction power supply.

Abstract: Provided are a device and a method for synthesis of a gallium-containing garnet-structured scintillator polycrystalline material. The synthesis device includes a polycrystalline material synthesis chamber (7) made of a thermal insulation material (1); a crucible (3) arranged at the center of the bottom of the polycrystalline material synthesis chamber; an induction coil (2) annularly arranged outside the polycrystalline material synthesis chamber at a position with a height corresponding to that of the crucible; an arc heating device (4) arranged on a central axis of the induction coil in the polycrystalline material synthesis chamber, so as to heat and melt raw materials at the center of the crucible by means of the high temperature generated by arc discharge; the induction coil is connected to a RF induction power supply.