Abstract: A signal decision equalization method and apparatus are provided. The method includes: obtaining an input signal; determining a decision circuit of the input signal; obtaining a first group of decision thresholds and a first group of equalization expectations of the decision circuit; determining a decision value of the input signal based on the first group of equalization expectations, the first group of decision thresholds, and the input signal, and outputting the decision value; updating, based on the decision value and the input signal, a first equalization expectation that is in the first group of equalization expectations and that corresponds to the decision value to a second equalization expectation to obtain a second group of equalization expectations; and updating at least one decision threshold in the first group of decision thresholds based on the second equalization expectation to obtain a second group of decision thresholds.

Abstract: Methods, systems, and devices are disclosed for implementing high conversion efficiency solar cells. In one aspect, an optical-to-electrical energy conversion device includes a substrate formed of a doped semiconductor material and having a first region and a second region, an array of multilayered nanoscale structures protruding from the first region of the substrate, in which the nanoscale structures are formed of a first co-doped semiconductor material covered by a layer of a second co-doped semiconductor material forming a core-shell structure, the layer covering at least a portion of the doped semiconductor material of the substrate in the second region, and an electrode formed on the layer-covered portion of the substrate in the second region, in which the multilayered nanoscale structures provide an optical active region capable of absorbing photons from light at one or more wavelengths to generate an electrical signal presented at the electrode.

Abstract: A converter for switching control signals is disclosed to solve the technical problem that existing technologies are unable to switch between two control signals. The converter includes an interface male connected with an equipment which is controlled by a first control signal; an interface socket connected with an equipment which is controlled by a second signal; an interface female connected with cables which are adapted for respectively transmitting the first control signal and the second control signal; a switch which switches between the first control signal and the second control signal; and a substrate connected with the interface male, the interface socket, the interface female and the switch, wherein according to a switching position of the switch, the substrate controls the first control signal or the second control signal in the cables connected with the interface female to correspondingly switch to the interface male or the interface socket for outputting.

Abstract: A semiconductor device capable of enhanced sub-bandgap photon absorption and detection is described. This semiconductor device includes a p-n junction structure formed of a semiconductor material, wherein the p-n junction structure is configured such that at least one side of the p-n junction (p-side or n-side) is spatially confined in at least one dimension of the device (e.g., the direction perpendicular to the p-n junction interface). Moreover, at least one side of the p-n junction (p-side or n-side) is heavily doped. The semiconductor device also includes electrical contacts formed on a semiconductor substrate to apply an electrical bias to the p-n junction to activate the optical response at target optical wavelength corresponds to an energy substantially equal to or less than the energy band-gap of the first semiconductor material. In particular embodiments, the semiconductor material is silicon.

Abstract: A converter for switching control signals is disclosed to solve the technical problem that existing technologies are unable to switch between two control signals. The converter includes an interface male connected with an equipment which is controlled by a first control signal; an interface socket connected with an equipment which is controlled by a second signal; an interface female connected with cables which are adapted for respectively transmitting the first control signal and the second control signal; a switch which switches between the first control signal and the second control signal; and a substrate connected with the interface male, the interface socket, the interface female and the switch, wherein according to a switching position of the switch, the substrate controls the first control signal or the second control signal in the cables connected with the interface female to correspondingly switch to the interface male or the interface socket for outputting.

Abstract: Methods, systems, and devices are disclosed for implementing high conversion efficiency solar cells. In one aspect, an optical-to-electrical energy conversion device includes a substrate formed of a doped semiconductor material and having a first region and a second region, an array of multilayered nanoscale structures protruding from the first region of the substrate, in which the nanoscale structures are formed of a first co-doped semiconductor material covered by a layer of a second co-doped semiconductor material forming a core-shell structure, the layer covering at least a portion of the doped semiconductor material of the substrate in the second region, and an electrode formed on the layer-covered portion of the substrate in the second region, in which the multilayered nanoscale structures provide an optical active region capable of absorbing photons from light at one or more wavelengths to generate an electrical signal presented at the electrode.

Abstract: A semiconductor device capable of enhanced sub-bandgap photon absorption and detection is described. This semiconductor device includes a p-n junction structure formed of a semiconductor material, wherein the p-n junction structure is configured such that at least one side of the p-n junction (p-side or n-side) is spatially confined in at least one dimension of the device (e.g., the direction perpendicular to the p-n junction interface). Moreover, at least one side of the p-n junction (p-side or n-side) is heavily doped. The semiconductor device also includes electrical contacts formed on a semiconductor substrate to apply an electrical bias to the p-n junction to activate the optical response at target optical wavelength corresponds to an energy substantially equal to or less than the energy band-gap of the first semiconductor material. In particular embodiments, the semiconductor material is silicon.

Abstract: A waveguide structure for a TAMR head is disclosed wherein at least one detection waveguide is formed parallel to a main waveguide and located a gap distance therefrom. A light source transmits light into the main waveguide and towards an ABS/medium interface. A plasmon generator converts light from the waveguide into plasmon waves that are directed onto a magnetic medium. Back reflected light is captured by the main waveguide, partially diverted into a detection waveguide, and transmitted to a photo detector that measures light intensity (IB) which correlates closely to the plasmon wave intensity at the ABS/medium interface. A controller linked to the photo detector is employed to calculate IB as a function of ABS/medium spacing in a non-write condition and this relationship can be used to control and maintain a constant plasmon wave intensity at the ABS during a series of TAMR write processes with a plurality of media.