Patents by Inventor Yue-Cin Lin

Yue-Cin Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer
    Patent number: 8034654
    Abstract: The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1?x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1?x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1?x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1?x buffer layer.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: October 11, 2011
    Assignee: National Chiao Tung University
    Inventors: Edward Yi Chang, Shih-Hsuan Tang, Yue-Cin Lin
  • Method for forming a GexSi1-x buffer layer of solar-energy battery on a silicon wafer
    Publication number: 20100129956
    Abstract: The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1?x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1?x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1?x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1?x buffer layer.
    Type: Application
    Filed: August 4, 2009
    Publication date: May 27, 2010
    Applicant: National Chiao Tung University
    Inventors: Edward Yi Chang, Shih-Hsuan Tang, Yue-Cin Lin