Abstract: A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.

Abstract: A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.

Abstract: A high electron mobility transistor (HEMT) device is provided. The HEMT device includes a substrate layer, a buffer layer, a barrier layer, and a metallic electrode layer sequentially arranged in that order from bottom to top. The metallic electrode layer includes a source electrode, a gate electrode and a drain electrode sequentially arranged in that order from left to right. The barrier layer may include m number of fluorine-doped regions arranged in sequence, where m is a positive integer and m?2. The HEMT device can realize a relative stability of transconductance in a large range of a gate-source-bias through mutual compensation of transconductances in the fluorine-doped regions with different fluorine-ion concentrations of the barrier layer under the gate electrode, and the HEMT device has a good linearity without the need of excessive adjustments of material structure and device.

Abstract: The present invention discloses an epitaxial lift-off process of graphene-based gallium nitride (GaN), and principally solves the existing problems about complex lift-off technique, high cost, and poor quality of lift-off GaN films. The invention is achieved by: first, growing graphene on a well-polished copper foil by CVD method; then, transferring a plurality of layers of graphene onto a sapphire substrate; next, growing GaN epitaxial layer on the sapphire substrate with a plurality of graphene layers transferred by the metal organic chemical vapor deposition (MOCVD) method; finally, lifting off and transferring the GaN epitaxial layer onto a target substrate with a thermal release tape. With graphene, the present invention relieves the stress generated by the lattice mismatch between substrate and epitaxial layer; moreover, the present invention readily lifts off and transfers the epitaxial layer to the target substrate by means of weak Van der Waals forces between epitaxial layer and graphene.

Abstract: The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively.

Abstract: The present invention discloses an epitaxial lift-off process of graphene-based gallium nitride (GaN), and principally solves the existing problems about complex lift-off technique, high cost, and poor quality of lift-off GaN films. The invention is achieved by: first, growing graphene on a well-polished copper foil by CVD method; then, transferring a plurality of layers of graphene onto a sapphire substrate; next, growing GaN epitaxial layer on the sapphire substrate with a plurality of graphene layers transferred by the metal organic chemical vapor deposition (MOCVD) method; finally, lifting off and transferring the GaN epitaxial layer onto a target substrate with a thermal release tape. With graphene, the present invention relieves the stress generated by the lattice mismatch between substrate and epitaxial layer; moreover, the present invention readily lifts off and transfers the epitaxial layer to the target substrate by means of weak Van der Waals forces between epitaxial layer and graphene.

Abstract: The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.

Abstract: The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.

Abstract: The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively.

Abstract: A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.

Abstract: A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.

Abstract: A bisubstrate inhibitor of Src kinases, having a nucleotide or N-heteroaromatic moiety; and a peptide/phosphopeptide, peptidomimetic, or phosphopeptide mimic moiety. The moieties are linked by a rigid or a flexible linker. The nucleotide or N-heteroaromatic moiety is ATP, ATP-mimics, N-heteroaromatics including purine-based derivatives, pyrimidine-based derivatives such as 2,4-diamino-5-substituted pyrimidine derivatives, pyrazole[3,4-d]pyrimidine derivatives, pyrrolo[2,3-d]pyrimidine derivatives, pyrido[2,3-d]pyrimidine derivatives, amino-substituted dihydropyrimido[4,5-d]pyrimidinone derivatives, thieno- and furo-substituted derivatives, quinazoline derivatives, and quinoline derivatives, and several natural products such as aminogenistein.

Abstract: A bisubstrate inhibitor of Src kinases, having a nucleotide or N-heteroaromatic moiety; and a peptide/phosphopeptide, peptidomimetic, or phosphopeptide mimic moiety. The moieties are linked by a rigid or a flexible linker. The nucleotide or N-heteroaromatic moiety is ATP, ATP-mimics, N-heteroaromatics including purine-based derivatives, pyrimidine-based derivatives such as 2,4-diamino-5-substituted pyrimidine derivatives, pyrazole[3,4-d]pyrimidine derivatives, pyrrolo[2,3-d]pyrimidine derivatives, pyrido[2,3-d]pyrimidine derivatives, amino-substituted dihydropyrimido[4,5-d]pyrimidinone derivatives, thieno- and furo-substituted derivatives, quinazoline derivatives, and quinoline derivatives, and several natural products such as aminogenistein.

Abstract: A uniform composite nanofiber includes a tubular first nanofiber, and a second nanofiber formed inside or outside the first nanofiber. The first nanofiber is first formed within a plurality of nano-scale pores of a template placed on a current collector, and then the second nanofiber is formed on inner or outer surface of the first nanofiber, and the template is removed afterwards for obtaining the composite nanofiber.

Abstract: A solid-phase nano extraction device includes an extraction tube whose inner surface has a nanostructure for a large contact area with object to be detected. The nanostructure can adsorb objects in an extremely short reaction time. A driving structure is designed for the solid-phase micro extraction device. The extraction tube is connected to the driving structure for the objects to enter the fiber under the force of concentration gradient, pressure difference, or capillary force, thereby being adsorbed onto the nanostructure.

Abstract: Methods of fabricating one-dimensional composite nanofiber on a template membrane with porous array by chemical or physical process are disclosed. The whole procedures are established under a base concept of “secondary template”. First of all, tubular first nanofibers are grown up in the pores of the template membrane. Next, by using the hollow first nanofibers as the secondary templates, second nanofibers are produced therein. Finally, the template membrane is removed to obtain composite nanofibers. Showing superior performance in weight energy density, current discharge efficiency and irreversible capacity, the composite nanofibers are applied to extensive scopes like thin-film battery, hydrogen storage, molecular sieving, biosensor and catalyst support in addition to applications in lithium batteries.

Abstract: A bisubstrate inhibitor of Src kinases, having a nucleotide or N-heteroaromatic moiety; and a peptide/phosphopeptide, peptidomimetic, or phosphopeptide mimic moiety. The moieties are linked by a rigid or a flexible linker. The nucleotide or N-heteroaromatic moiety is ATP, ATP-mimics, N-heteroaromatics including purine-based derivatives, pyrimidine-based derivatives such as 2,4-diamino-5-substituted pyrimidine derivatives, pyrazole[3,4-d]pyrimidine derivatives, pyrrolo[2,3-d]pyrimidine derivatives, pyrido[2,3-d]pyrimidine derivatives, amino-substituted dihydropyrimido[4,5-d]pyrimidinone derivatives, thieno- and furo-substituted derivatives, quinazoline derivatives, and quinoline derivatives, and several natural products such as aminogenistein.

Abstract: A solid-phase nano extraction device includes an extraction tube whose inner surface has a nanostructure for a large contact area with object to be detected. The nanostructure can adsorb objects in an extremely short reaction time. A driving structure is designed for the solid-phase micro extraction device. The extraction tube is connected to the driving structure for the objects to enter the fiber under the force of concentration gradient, pressure difference, or capillary force, thereby being adsorbed onto the nanostructure.

Abstract: Methods of fabricating one-dimensional composite nanofiber on a template membrane with porous array by chemical or physical process are disclosed. The whole procedures are established under a base concept of “secondary template”. First of all, tubular first nanofibers are grown up in the pores of the template membrane. Next, by using the hollow first nanofibers as the secondary templates, second nanofibers are produced therein. Finally, the template membrane is removed to obtain composite nanofibers. Showing superior performance in weight energy density, current discharge efficiency and irreversible capacity, the composite nanofibers are applied to extensive scopes like thin-film battery, hydrogen storage, molecular sieving, biosensor and catalyst support except applications in lithium batteries.

Abstract: A low-cost, simple method for manufacturing highly-ordered nanofibers is provided. The feature of the procedure is using a self-catalytic mechanism. First of all, a porous membrane template is used as a filter to spread metal nanoparticles, which have a self-catalytic characteristic, onto a current collector. After removing, the membrane template, the nanoparticles grow and become highly-ordered nanofibers by heat treatment in an oxygen atmosphere. The nanofibers show superior field emission effects and are therefore ideal field emission sources.