Abstract: Provided herein is a separator used for an electrochemical device such as a lithium-ion battery. The separator disclosed herein comprises a porous base material, a first protective porous layer coated on one side of the porous base material, and a second protective porous layer coated on the other side of the porous base material, wherein the first protective porous layer comprises an organic binder and a first inorganic filler, and wherein the second protective porous layer comprises an organic binder and a second inorganic filler different from the first inorganic filler. Also provided herein is a lithium-ion battery including the separator disclosed herein. The separator disclosed herein is excellent in terms of safety, ion permeability, and cycle characteristics.

Abstract: An adaptive electrothermal system and an electrothermal apparel are provided. The adaptive electrothermal system comprises a controller, a step-down regulator, a power controller and a load. An input of the controller is configured to receive an input voltage, a first output of the controller is configured to output an input voltage higher than an operating voltage of the load to the step-down regulator, a second output of the controller is configured to output an input voltage lower than or equal to the operating voltage of the load to the power controller, the step-down regulator steps the received input voltage down to a voltage equal to the operating voltage of the load and outputs the stepped-down voltage to the power controller, and the power controller outputs the input voltage it receives to the corresponding load according to a load control signal from the controller.

Abstract: A dynamic decode circuit for decoding a plurality of input signals comprises a decoder that decodes the plurality of input signals to produce a result at a first node, the result is propagated to a second node while an evaluation clock is active by a pair of serially connected transistors consisting of a transistor receiving an evaluation clock at its gate and a transistor receiving the first node at its gate, the interconnection of the pair of serially connected transistors is precharged when the evaluation clock is inactive to provide a delay between the end of the active evaluation clock and the beginning of the precharge.

Abstract: Electronic circuits and memory circuits are provided for implementing a method for transforming a chip clock signal to a local clock signal. The method includes: generating a first clock signal in response to the chip clock signal, a first control signal and a second control signal; generating a second clock signal by delaying the first clock signal with a second clock delay; generating the first control signal and the second control signal by delaying the second clock signal with a pulse width delay, where the first control signal goes from high-to-low with a control signal delay after the second control signal goes from high-to-low, and vice versa; and generating the local clock signal based on the second clock signal.

Abstract: Electronic circuits and memory circuits are provided for implementing a method for transforming a chip clock signal to a local clock signal. The method includes: generating a first clock signal in response to the chip clock signal, a first control signal and a second control signal; generating a second clock signal by delaying the first clock signal with a second clock delay; generating the first control signal and the second control signal by delaying the second clock signal with a pulse width delay, where the first control signal goes from high-to-low with a control signal delay after the second control signal goes from high-to-low, and vice versa; and generating the local clock signal based on the second clock signal.

Abstract: Electronic circuits and memory circuits are provided for implementing a method for transforming a chip clock signal to a local clock signal. The method includes: generating a first clock signal in response to the chip clock signal, a first control signal and a second control signal; generating a second clock signal by delaying the first clock signal with a second clock delay; generating the first control signal and the second control signal by delaying the second clock signal with a pulse width delay, where the first control signal goes from high-to-low with a control signal delay after the second control signal goes from high-to-low, and vice versa; and generating the local clock signal based on the second clock signal.

Abstract: An adaptive electrothermal system and an electrothermal apparel are provided. The adaptive electrothermal system comprises a controller, a step-down regulator, a power controller and a load. An input of the controller is configured to receive an input voltage, a first output of the controller is configured to output an input voltage higher than an operating voltage of the load to the step-down regulator, a second output of the controller is configured to output an input voltage lower than or equal to the operating voltage of the load to the power controller, the step-down regulator steps the received input voltage down to a voltage equal to the operating voltage of the load and outputs the stepped-down voltage to the power controller, and the power controller outputs the input voltage it receives to the corresponding load according to a load control signal from the controller.

Abstract: A local evaluation circuit for a memory array includes first and second NAND gates and first, second, third, and fourth switches. The first switch is configured to couple a first node of the second NAND gate to a first power supply node in response to a first read signal. The second switch is configured to couple a first node of the first NAND gate to the first power supply node in response to a second read signal. The third switch is configured to couple a second node of the first NAND gate to a second power supply node in response to the first read signal. The fourth switch is configured to couple a second node of the second NAND gate to the second power supply node in response to the second read signal.

Abstract: A global to local bit line interface circuit for domino SRAM devices includes a pair of complementary global write bit lines in selective communication with an array of SRAM cells through corresponding local write bit lines, the complementary global write bit lines configured to write a selected SRAM cell with data presented on a pair of complementary write data input lines; a pair of complementary global read bit lines in selective communication with the array of SRAM cells through corresponding local read bit lines, the complementary global read bit lines configured to read data stored in a selected SRAM cell and present the read data on a pair of complementary read data output lines; and blocking logic configured to prevent, during a write operation, propagation of stored data from the SRAM cells out on the complementary read data output lines prior to completion of the write operation.

Abstract: A global to local bit line interface circuit for domino SRAM devices includes a pair of complementary global write bit lines in selective communication with an array of SRAM cells through local write bit lines, the global write bit lines configured to write a selected SRAM cell with data presented on a pair of write data input lines; a pair of complementary global read bit lines in selective communication with the array through local read bit lines, the global read bit lines configured to read data stored in a selected cell and present the read data on a pair of read data output lines; and write control logic configured to control precharging of the global write bit lines independently with respect to the global read bit lines, and wherein a pulse width of write data on the global write bit lines is determined only by a global column select signal.

Abstract: A global to local bit line interface circuit for domino SRAM devices includes a pair of complementary global write bit lines in selective communication with an array of SRAM cells through local write bit lines, the global write bit lines configured to write a selected SRAM cell with data presented on a pair of write data input lines; a pair of complementary global read bit lines in selective communication with the array through local read bit lines, the global read bit lines configured to read data stored in a selected cell and present the read data on a pair of read data output lines; and write control logic configured to control precharging of the global write bit lines independently with respect to the global read bit lines, and wherein a pulse width of write data on the global write bit lines is determined only by a global column select signal.

Abstract: A global to local bit line interface circuit for domino SRAM devices includes a pair of complementary global write bit lines in selective communication with an array of SRAM cells through corresponding local write bit lines, the complementary global write bit lines configured to write a selected SRAM cell with data presented on a pair of complementary write data input lines; a pair of complementary global read bit lines in selective communication with the array of SRAM cells through corresponding local read bit lines, the complementary global read bit lines configured to read data stored in a selected SRAM cell and present the read data on a pair of complementary read data output lines; and blocking logic configured to prevent, during a write operation, propagation of stored data from the SRAM cells out on the complementary read data output lines prior to completion of the write operation.

Abstract: A programmable clock control circuit includes a base block, a chop block, and a pulse width variation block coupled between the chop block and the base block that receives the chop block output and provides a pulse width variation output to the base block. The pulse width variation block is programmable to vary the chop block output to provide at least three different output pulse widths. The circuit also includes a clock delay block coupled an output of the base block to delay the output pulse and having a clock signal output.

Abstract: A data input latch and clocking method and apparatus for high performance SRAM in which an L1 data input latch is controlled by a logical combination of the normal local clock buffer clock signal and the local array clock buffer clock signal. This logical combination of clock signals minimizes the hold time of the L1 latch provides a fast cycle time in which the SRAM macro can process successive write instructions while avoiding early mode issues.

Abstract: A programmable clock control circuit includes a base block, a chop block, and a pulse width variation block coupled between the chop block and the base block that receives the chop block output and provides a pulse width variation output to the base block. The pulse width variation block is programmable to vary the chop block output to provide at least three different output pulse widths. The circuit also includes a clock delay block coupled an output of the base block to delay the output pulse and having a clock signal output.

Abstract: A data input latch and clocking method and apparatus for high performance SRAM in which an L1 data input latch is controlled by a logical combination of the normal local clock buffer clock signal and the local array clock buffer clock signal. This logical combination of clock signals minimizes the hold time of the L1 latch provides a fast cycle time in which the SRAM macro can process successive write instructions while avoiding early mode issues.

Abstract: A domino read bit line structure (20) integral to an SRAM array (1, 2) with thirty-two word lines or less to access SRAM cells divided into two groups (3, 4, 90, 100) is described. The bit line structure (20) includes a dynamic bit decode multiplexer (11, 40) and two NAND circuits (5, 80) used to combine the two groups (3, 4, 90, 100), wherein in order to reduce power consumption the two NANDS (80) drive the dynamic bit decode multiplexer (40) directly, such that true and complement dynamic outputs (rt, rc) drive a set-reset latch (50) to convert the dynamic outputs (rt, rc) to a single static signal (doc), wherein the output of the set-reset latch (50) is already static so that the set-reset latch (50) acts as an effective array output latch (7).

Abstract: A CAM system is disclosed in which compare data, for example an address translation request, is provided as input search data to a search line generator. The search line generator presents search line input data, through a buffer, to CAM and RAM array systems that include dynamically precharged and evaluated memory cells. Timing sequences in the CAM system are controlled by a series of individually triggered one shot pulse generators. The one shot pulse generators control the timing of CAM system activities, for example the precharge of CAM subsystems, so that these activities are staggered in time. This timing approach improves power consumption and evaluation time within the CAM system. By distributing precharging activities in time throughout the CAM cycle, current peaking during the CAM cycle is reduced. The CAM system latches results in an output latch that is controlled by a one shot pulse generator.

Abstract: An apparatus and method is provided that combines both self test and functional features in a single latch circuit, which may be used with an SRAM array and is usefully embodied as an L1-L2 latch. During partial writes from an SRAM array, data bits of unknown state are inhibited from entering the latch circuit, while data for testing is allowed to enter. In one useful embodiment of the invention the latch circuit is used with a mode control that provides mode select signals to operate the latch circuit in one of a plurality of modes, including at least full write and partial write modes. The latch circuit further includes a data hold circuit for selectively receiving and storing data coupled to the latch circuit. A first enabling circuit responsive to the mode select signals enables the hold circuit to receive all the data contained in the array during a full write mode, and further enables the hold circuit to receive only some of the data bits contained in the array during a partial write mode.

Abstract: A light sensitive dimmer switch circuit for controlling the illumination level of a light as a function of the ambient illumination level surrounding the dimmer switch circuit by selectively controlling an AC power signal provided to the light includes a photocell and a phase control circuit. The photocell is responsive to the ambient illumination level and has a conduction state associated therewith. The conduction state changes, in response to the ambient illumination level, such that the photocell effectively exhibits either a substantially open circuit or a substantially short circuit. The phase control circuit selectively varies a conduction phase angle associated with the AC power signal which correspondingly causes a variation in the illumination level of the light.