Abstract: An apparatus for calibrating a three-dimensional thermography fault isolation tool, includes: a substrate having two or more pins; a first semiconductor die coupled to the substrate; a first heat generating test component at the first semiconductor die; and a second heat generating test component, wherein the first heat generating test component and the second heat generating test component are located at different respective heights; wherein the first heat generating test component is configured to produce a first temperature change in response to a voltage applied by the three-dimensional thermography fault isolation tool to the two or more pins; and wherein the second heat generating test component is configured to produce a second temperature change in response to the voltage or another voltage applied by the three-dimensional thermography fault isolation tool.

Abstract: A method of enabling the use of a programmable device having impaired circuitry includes determining one or more locations of the impaired circuitry of the programmable device; generating a defect map for the programmable device based on the determined locations of the impaired circuitry; generating a plurality of configuration bitstreams to implement a circuit in the programmable device; selecting one of the plurality of configuration bitstreams that does not use the impaired circuitry indicated by the defect map; and programming the programmable device with the selected configuration bitstream.

Abstract: Method and apparatus for compensating an integrated circuit design for mechanical stress effects. One aspect of the invention relates to designing an integrated circuit. Layout data is obtained that describes layers of the integrated circuit. At least one of the layers is analyzed to detect at least one structure susceptible to damage from mechanical stress. A bias is automatically added to each of the at least one structure to reduce mechanical stress of the at least one structure as fabricated. Augmented layout data is then provided for the integrated circuit.

Abstract: A test methodology for testing a memory device with a RSR feature is disclosed. For example, a method for testing a memory device having at least one memory cell group, at least one redundant memory cell group, and a defect detect register is disclosed. In one embodiment, the method applies at least one memory test to the at least one memory cell group; and applies a defect detect register test to the defect detect register.

Abstract: According to one aspect of the invention, a circuit for determining the location of a defect in an integrated circuit is described. The circuit comprises a conductor extending from a first node to a second node and a test signal driver coupled to the first node of the conductor. The test signal driver receives a test signal using a first clock signal, while a plurality of detector circuits coupled to the conductor between the first node and the second node to detect an output at the plurality of nodes using a second clock signal. According to other embodiments, circuits for determining the location of a defect in a programmable logic device are disclosed. Finally, various methods for determining the location of a defect in an integrated circuit are described.

Abstract: The embodiments of the present invention enable a new metal diagnosis pattern based on a production test pattern to quickly identify open and short circuits of metal lines which cannot be probed, such as the long lines of a programmable logic device, and to further isolates the fault location for physical failure analysis. According to one aspect of the invention, a circuit locally drives a plurality of metal long line segments to determine whether a defect in a line is a short circuit, or further to identify the location of an open circuit.

Abstract: Described are methods and circuits for identifying defective device layers and localizing defects. Production PLD tests extract statistically significant data relating failed interconnect resources to the associated conductive metal layer. Failure data thus collected is then analyzed periodically to identify layer-specific problems. Test circuits in accordance with some embodiments employ interconnect resources heavily weighted in favor of specific conductive layers to provide improved layer-specific failure data. Some such test circuits are designed to identify open defects, while others are designed to identify short defects.

Abstract: Method and apparatus are disclosed for analyzing defect data produced in testing a semiconductor chip from a logic design. In various embodiments, input for processing is a first inspection data set that identifies a first set of physical locations that are associated with defects detected during fabrication of the chip. Also input is a second test data set that includes one or more identifiers associated with failing circuitry in the chip. A second set of physical locations is determined from the one or more identifiers of failing circuitry, hierarchical relationships between blocks of the design, and placement information associated with the blocks. Each of the one or more identifiers is associated with at least one of the blocks. Correspondences are identified between physical locations in the first inspection data set and the second set of physical locations.

Abstract: Described are methods and circuits for identifying defective device layers and localizing defects. Production PLD tests extract statistically significant data relating failed interconnect resources to the associated conductive metal layer. Failure data thus collected is then analyzed periodically to identify layer-specific problems. Test circuits in accordance with some embodiments employ interconnect resources heavily weighted in favor of specific conductive layers to provide improved layer-specific failure data. Some such test circuits are designed to identify open defects, while others are designed to identify short defects.