Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

Abstract: A method for manufacturing an electronic device includes the steps of providing a flexible substrate, forming an electric circuit layer on the flexible substrate at an elevated temperature, and enhancing a transmittance of the flexible substrate after forming the electric circuit layer.

Abstract: An operating method of an optical system in a vehicle is provided. The optical system includes a display device. The display device includes a display panel and a plurality of light emitting units. The light emitting units are configured to emit a light to the display panel. The operating method includes the following steps. An emphasized portion of an object is determined. An image corresponding to the emphasized portion is displayed by the display device by adjusting a light intensity of at least a portion of the light emitted from the light emitting units.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: A display device includes a substrate, at least one light emitting unit bound on the substrate, a transparency controllable unit disposed on the substrate, and an integrated circuit unit overlapped with the substrate. The integrated circuit unit includes a semiconducting structure and a conductive structure overlapped with the semiconducting structure. The integrated circuit unit is electrically connected to the at least one light emitting unit and the transparency controllable unit.

Abstract: The disclosure provides a transparent display device including a display panel. The display panel includes a display area, a non-display area, and a plurality of pixels. The non-display area is adjacent to the display area. The plurality of pixels are disposed in the display area. A difference between a transmittance of the display area and a transmittance of the non-display area is less than 30% of the transmittance of the display area.

Abstract: Glasses with gesture recognition function include a glasses frame and a gesture recognition system. The gesture recognition system is disposed on the glasses frame and configured to detect hand gestures in front of the glasses thereby generating a control command. The gesture recognition system transmits the control command to an electronic device to correspondingly control the electronic device.

Abstract: An electronic device and a method for performing clock gating in the electronic device are provided. The electronic device includes at least one function circuit, a device under test (DUT) circuit and at least one gating circuit. The function circuit is configured to operate according to at least one primary clock, and the DUT circuit is configured to operate according to at least one secondary clock. In addition, the clock gating circuit is configured to control whether to enable the primary clock according to at least one primary enable signal, and control whether to enable the secondary clock according to the primary enable signal and a secondary enable signal.

Abstract: A foldable display device is provided by the present disclosure. The foldable display device includes a foldable display panel and a foldable cover. The foldable cover is adhered to the foldable display panel. The foldable cover includes an inner substrate, an outer substrate and a first adhesive. The first adhesive is disposed between the inner substrate and the outer substrate. A thickness of the first adhesive is ranged from 1 micrometer to 40 micrometers, and a ratio of the sum of the thickness of the first adhesive and a thickness of the inner substrate to a thickness of the foldable cover is greater than or equal to 0.5 and less than 1. In addition, the foldable display device further includes a second adhesive disposed between the foldable display panel and the foldable cover.

Abstract: An electronic device which is capable of being bent in a first direction and includes a plurality of light-emitting units and a plurality of conductive patterns overlapping with at least a portion of the plurality of light-emitting units and extending in a second direction. The first direction and the second direction have an angle ? of not greater than 30 degrees.

Abstract: A transparent display device is provided. The transparent display device includes a display unit having a circuit area and a transparent area. The display unit includes a plurality of signal lines located in the circuit area, a plurality of pixel circuits electrically connected to the signal lines and located in the circuit area, a plurality of light-emitting elements driven by the pixel circuits and located in the circuit area, and an encapsulation layer located in the circuit area and the transparent area. A first thickness of the encapsulation layer located in the circuit area is different from a second thickness of the encapsulation layer located in the transparent area.

Abstract: Semiconductor structure and methods of forming the same are provided. An exemplary method includes receiving a workpiece including a magnetic tunneling junction (MTJ) and a conductive capping layer disposed on the MTJ, depositing a first dielectric layer over the workpiece, performing a first planarization process to the first dielectric layer, and after the performing of the first planarization process, patterning the first dielectric layer to form an opening exposing a top surface of the conductive capping layer, selectively removing the conductive capping layer. The method also includes depositing an electrode layer to fill the opening and performing a second planarization process to the workpiece such that a top surface of the electrode layer and a top surface of the first dielectric layer are coplanar.

Abstract: In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.

Abstract: A stretchable electronic device includes a first electronic unit including a first light emitting element, a second electronic unit including a second light emitting element and disposed adjacent to the first electronic unit, and an elasticity layer having a connecting region connecting the first display unit and the second display unit. In a top view of the stretchable electronic device, a size difference between the connecting region before stretching and the connecting region after stretching is greater than a size difference between the first electronic unit before stretching and the first electronic unit after stretching.

Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Abstract: The disclosure provides a display device. The display device includes a display panel and a vibration generating module. The vibration generating module is attached to the display panel and includes a substrate, a circuit layer, and a plurality of vibrators. The circuit layer and the plurality of vibrators are disposed on the substrate, and the plurality of vibrators are electrically connected to the circuit layer.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: A package structure, including a circuit board, multiple circuit structure layers, at least one bridge structure, and at least one supporting structure, is provided. The circuit structure layer is disposed on the circuit board. The bridge structure is connected between the two adjacent circuit structure layers. The supporting structure is located between the two adjacent circuit structure layers, and the supporting structure has a first end and a second end opposite to each other and respectively connecting the bridge structure and the circuit board.

Abstract: This disclosure provides a lens assembly that has an optical path and includes a lens element and a light-blocking membrane layer. The lens element has an optical portion, and the optical path passes through the optical portion. The light-blocking membrane layer is coated on the lens element and adjacent to the optical portion. The light-blocking membrane layer has a distal side and a proximal side that is located closer to the optical portion than the distal side. The proximal side includes two extension structures and a recessed structure. Each of the extension structures extends along a direction away from the distal side, and the extension structures are not overlapped with each other in a direction in parallel with the optical path. The recessed structure is connected to the extension structures and recessed along a direction towards the distal side.

Abstract: A semiconductor device includes a first die having a first bonding layer; a second die having a second bonding layer disposed over and bonded to the first bonding layer; a plurality of bonding members, wherein each of the plurality of bonding members extends within the first bonding layer and the second bonding layer, wherein the plurality of bonding members includes a connecting member electrically connected to a first conductive pattern in the first die and a second conductive pattern in the second die, and a dummy member electrically isolated from the first conductive pattern and the second conductive pattern; and an inductor disposed within the first bonding layer and the second bonding layer. A method of manufacturing a semiconductor device includes bonding a first inductive coil of a first die to a second inductive coil of a second die to form an inductor.