Abstract: A method for smelting low-phosphorus high-manganese steel based on reduction dephosphorization of ferromanganese is provided in the present application, relating to the technical field of high-manganese steel smelting, where the dephosphorization of ferromanganese is carried out under reducing atmosphere conditions through mediate-frequency induction furnace to obtain molten ferromanganese with lower phosphorus content, which is subsequently mixed with low phosphorus molten steel obtained by smelting in oxidative period of electric arc furnace in LF ladle refining furnace to make the Mn content of steel reach the requirement of high-manganese steel, and smelting is carried out under the condition of reducing atmosphere by adjusting the composition and temperature of the molten steel to meet the requirements of the target composition of the steel grade before tapping the steel.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The method of manufacturing a semiconductor structure includes: providing a base; forming a plurality of first trenches arranged in parallel at intervals and extending along a first direction, and an initial active region between two adjacent ones of the first trenches, wherein the initial active region includes a first initial source-drain region close to a bottom of the first trench, a second initial source-drain region away from the bottom of the first trench, and an initial channel region located between the first initial source-drain region and the second initial source-drain region; forming a protective dielectric layer, wherein the protective dielectric layer covers a sidewall of the second initial source-drain region and a sidewall of the initial channel region; thinning the first initial source-drain region.

Abstract: The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The method of manufacturing a semiconductor structure includes: providing a base; forming a plurality of first trenches arranged in parallel at intervals and extending along a first direction, and an initial active region between two adjacent ones of the first trenches, wherein the initial active region includes a first initial source-drain region close to a bottom of the first trench, a second initial source-drain region away from the bottom of the first trench, and an initial channel region located between the first initial source-drain region and the second initial source-drain region; forming a protective dielectric layer, wherein the protective dielectric layer covers a sidewall of the second initial source-drain region and a sidewall of the initial channel region; thinning the first initial source-drain region.

Abstract: A semiconductor device and a formation method thereof are provided. The semiconductor device includes: a semiconductor substrate, where a plurality of columnar active areas are formed on the semiconductor substrate, the plurality of columnar active areas are spaced apart by a plurality of first trenches extending along a first direction and a plurality of second trenches extending along a second direction; a plurality of third trenches positioned in the semiconductor substrate at bottoms of the second trenches, where the third trenches are recessed to bottoms of the columnar active areas, and a bottom surface of a given one of the third trenches is higher than a bottom surface of the given first trench; and a plurality of metal silicide bit lines extending along the first direction in the semiconductor substrate positioned at the bottoms of the plurality of third trenches and the bottoms of the plurality of columnar active areas.

Abstract: Embodiments of the present application provide a semiconductor structure and a semiconductor structure manufacturing method. The semiconductor structure includes: a wordline; and a first bitline and a second bitline located on two sides of the wordline and a first memory structure and a second memory structure located on the two sides of the wordline. The first bitline and the second bitline are connected to the first memory structure and the second memory structure respectively through a transistor. An extension direction of the first bitline is perpendicular to an extension direction of the wordline.

Abstract: A method for forming a semiconductor structure and the semiconductor structure are provided. The method for forming the semiconductor structure includes: providing a substrate, wherein a separate bit line structure is formed on the substrate; forming a first sacrificial layer on the side wall of the bit line structure; forming a first dielectric layer filling gap between the bit line structures; patterning the first dielectric layer and the first sacrificial layer to form a through hole, wherein the through hole and the remaining first dielectric layer and first sacrificial layer are alternately arranged; forming a second sacrificial layer on the side wall of the through hole, and filling the through hole to form a contact plug; forming a contact structure on the contact plug; and removing the first sacrificial layer to form a first air gap, and removing the second sacrificial layer to form a second air gap.

Abstract: A forming method for a semiconductor structure and the semiconductor structure are provided. The forming method of the semiconductor structure includes: providing a substrate, wherein separate bit line structures are formed on the substrate; forming a first sacrificial layer on a sidewall of a bit line structure; forming first dielectric layer filling gaps between adjacent bit line structures; patterning a first dielectric layer to form vias, wherein the vias expose active regions of the substrate, and the vias and remaining parts of the first dielectric layers are alternately arranged in an extension direction of the bit line structures; forming a second sacrificial layer on sidewalls of a via, and filling the via to form a contact plugs; forming a contact structure on the contact plug; and removing the first sacrificial layer to form first air gap, and removing the second sacrificial layer to form a second air gap.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a semiconductor body, bit lines and word lines. The semiconductor body includes a substrate and an isolation structure positioned above the substrate and configured to isolate a plurality of active regions, part of each of the active regions being formed from the substrate. The bit lines are positioned in the substrate and are connected to the active regions. The word lines intersect with the active regions and surround the active regions. The substrate is Silicon On Insulator (SOI) substrate.

Abstract: A semiconductor structure and a semiconductor structure manufacturing method is provided. The semiconductor structure includes: a wordline; and a first bitline and a second bitline located on two sides of the wordline and a first storage structure and a second storage structure located on the two sides of the wordline, the first bitline and the second bitline being connected to the first storage structure and the second storage structure respectively through a transistor. An extension direction of the first bitline and an extension direction of the wordline are at an acute or obtuse angle. In this way, the first storage structure and the second storage structure are provided on both sides of the wordline, which can increase storage capacity.

Abstract: The present invention provides an information dissemination system based on the integration of the broadcast network and the Internet, including: a terminal storage module, a regional storage module, a statistics-and-analysis module, a recommendation-and-analysis module, a media content management module and a network scheduling module. By two-level storing and playing of media contents, along with the statistics and analysis for on-demand behaviors of users, the intervention of the operator, and the recommendation and analysis performed by the recommendation-and-analysis module, the media contents are classified. Further, according to the classification, a media content is transmitted to the terminal storage module via the Internet; or, is transmitted to the terminal storage module via the Internet and pushed to the terminal storage module via the broadcast network; or, is pushed to the terminal storage module or the regional storage module at a predetermined time via the broadcast network.

Abstract: The present invention provides an information dissemination system based on the integration of the broadcast network and the Internet, including: a terminal storage module, a regional storage module, a statistics-and-analysis module, a recommendation-and-analysis module, a media content management module and a network scheduling module. By two-level storing and playing of media contents, along with the statistics and analysis for on-demand behaviors of users, the intervention of the operator, and the recommendation and analysis performed by the recommendation-and-analysis module, the media contents are classified. Further, according to the classification, a media content is transmitted to the terminal storage module via the Internet; or, is transmitted to the terminal storage module via the Internet and pushed to the terminal storage module via the broadcast network; or, is pushed to the terminal storage module or the regional storage module at a predetermined time via the broadcast network.