Abstract: An ultra-thin lens for augmented reality (AR) display includes: a primary lens, an intermediate lens, and a secondary lens. After entering the primary lens, image light undergoes two total reflections, then enters the intermediate lens and is partially reflected, then is directed to a human eye through the intermediate lens and the primary lens. The secondary lens is configured on the other side of the intermediate lens, and environmental light is directed to the human eye through the secondary lens, the intermediate lens, and the primary lens. According to the ultra-thin lens, total reflection and light splitting functions of the image light are realized respectively through the primary lens and the intermediate lens, so that the entire lens has a thin and light profile.

Abstract: A semiconductor device includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge, the semiconductor region including a first semiconductor region coupled with a drain terminal and a second semiconductor region coupled with a source terminal; and a third semiconductor region of a second conductivity type electrically coupled with a gate terminal, having a gate region and a net charge region, the net charge region disposed over the first semiconductor region and having a net charge in a depletion region that is substantially equal to the net charge of the at least one two-dimensional channel in the first semiconductor region when the semiconductor device is in an off-state.

Abstract: This disclosure provides semiconductor device including a first transistor with a first gate terminal, a first source terminal, and the first drain terminal, the first transistor being a depletion mode transistor and including a plurality of two-dimensional carrier channels of a conductivity type being one of a n-type or a p-type conductivity. The semiconductor device also includes a second transistor with a second gate terminal, a second source terminal, and a second drain terminal, the second transistor being an enhancement mode transistor, a gate-source interconnect forming an electrical connection between the first gate terminal and the second source terminal, and a drain-source interconnect forming an electrical connection between the first source terminal and the second drain terminal. The first transistor and the second transistor are fabricated on the same wafer or substrate.

Abstract: This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type. The diode also includes a plurality of sidewalls exposed in the semiconductor region defining at least one trench extending through the at least one two-dimensional carrier channel and a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the plurality of sidewalls and in contact with the at least one two-dimensional carrier channel. The diode also includes an anode material in contact with at least a portion of the semiconductor region and in contact with at least a portion of the material of the second conductivity type, and a cathode material in contact with the at least one two-dimensional carrier channel.

Abstract: An ultra-thin lens for augmented reality (AR) display includes: a primary lens, an intermediate lens, and a secondary lens. After entering the primary lens, image light undergoes two total reflections, then enters the intermediate lens and is partially reflected, then is directed to a human eye through the intermediate lens and the primary lens. The secondary lens is configured on the other side of the intermediate lens, and environmental light is directed to the human eye through the secondary lens, the intermediate lens, and the primary lens. According to the ultra-thin lens, total reflection and light splitting functions of the image light are realized respectively through the primary lens and the intermediate lens, so that the entire lens has a thin and light profile.