Abstract: Embodiments of this application provide a brake system and a control method. The brake control system includes: a master cylinder (1), a booster (2), at least one first control valve (11 and 12), at least one second control valve (21, 22, 23, and 24), at least one third control valve (31, 32, 33, and 34), at least one first interface (4), a first control unit (91), and a second control unit (92). The brake system provided in embodiments of this application has a plurality of redundancy designs, to ensure that the brake system can still meet a plurality of brake function requirements of a vehicle when a controller or a key solenoid valve fails, so as to improve security of the brake system, ensure a pedal feeling of a driver, and bring more stable and comfortable driving experience to the driver.

Abstract: Embodiments of this application provide a hydraulic apparatus, a brake system, and a control method. The brake system provided in embodiments of this application includes a master cylinder, a first booster, and a second booster. The brake system provided in embodiments of this application can implement rich braking functions by using the first booster or the second booster. In addition, the brake system provided in embodiments of this application has a multi-redundancy design. This can ensure that the brake system can still meet a plurality of braking function requirements of a vehicle when a controller or a key solenoid valve fails, improve safety of the brake system, ensure pedal feeling of a driver, and bring more stable and comfortable driving experience to the driver, which is suitable for brake systems of intelligent and electric vehicles.

Abstract: An electrode active material is provided. The electrode active material includes a layered metal oxide having a general formula NaxZnaNibMncM1dO2M2e, where 0.6?x?0.85, 0.95?a+b+c+d?1.05, 0?d?0.05, and 0?e?0.067, and where 0.04?a/c?0.1 and 0.23?b/c?0.45. M1 is selected from at least one of alkaline earth metal elements, transition metal elements, and alkali metal elements other than Zn, Ni, and Mn, and M2 is selected from non-metallic elements other than O.

Abstract: The invention provides an artificially synthesized single sphingosine lipid and use of delivering a nucleic acid thereof.

Abstract: Provided is an isolated antigen-binding protein, wherein the drug is used for the treatment of tumor, and the isolated antigen-binding protein comprises a PD-L1 binding moiety and an OX40 binding moiety, wherein: the OX40 binding moiety is capable of recognizing and/or binding amino acid residues G70 and/or F71 in a human OX40 extracellular domain; and the PD-L1 binding moiety is capable of recognizing and/or binding amino acid residues I54, Y56, E58, Q66 and/or R113 in an N-terminal IgV domain of human PD-L1. Further provided is a use of the isolated antigen-binding protein in preparing a drug, wherein the drug is used for the treatment of tumors.

Abstract: A dual-six-transistor (D6T) in-memory computing (IMC) accelerator supporting always-linear discharge and reducing digital steps is provided. In the IMC accelerator, three effective techniques are proposed: (1) A D6T bitcell can reliably run at 0.4 V and enter a standby mode at 0.26 V, to support parallel processing of dual decoupled ports. (2) An always-linear discharge and convolution mechanism (ALDCM) not only reduces a voltage of a bit line (BL), but also keeps linear calculation throughout an entire voltage range of the BL. (3) A bypass of a bias voltage time converter (BVTC) reduces digital steps, but still keeps high energy efficiency and computing density at a low voltage. A measurement result of the IMC accelerator shows that the IMC accelerator achieves an average energy efficiency of 8918 TOPS/W (8b×8b), and an average computing density of 38.6 TOPS/mm2 (8b×8b) in a 55 nm CMOS technology.

Abstract: This application provides a brake-by-wire system and a control method. This application is applicable to an intelligent vehicle, a new energy vehicle, a conventional vehicle, or the like. The braking control system includes: a brake master cylinder, a first pressure booster, a second pressure booster, at least one second control valve, at least one third control valve, at least one fourth control valve, and a second pedal feel simulation system. When a master brake system fails, a redundant brake system can independently control each brake wheel cylinder, to implement function backup for a master brake system, meeting requirements for braking functions such as ABS/AEB/ESC/TCS of a vehicle. The redundant brake system can further improve safety of the brake system and ensure pedal experience of a driver, thereby bringing more stable and comfortable driving experience to the driver.

Abstract: A method for establishing a biological model on joint toxicity of Caenorhabditis elegans and an application thereof are provided. The method for establishing the biological model includes adding the L1-stage Caenorhabditis elegans to a mixed system of working solution of mycotoxins containing tenuazonic acid and penicillin, K-medium solution and E. coli OP50 to obtain L1-stage Caenorhabditis elegans. The biological model indicates that TeA and PAT have a synergistic effect on the growth, development and reproductive ability of Caenorhabditis elegans, and their toxicity mechanism is related to inducing nematodes and stimulating transcriptional factors of Daf-16 genes. The biological model and detection method are simple to operate and its test period is short.

Abstract: The invention provides an artificially synthesized single sphingosine lipid and use of delivering a nucleic acid thereof.

Abstract: A method and a system for recommending a target garment matching an inputted garment. The method includes: extracting attributes from text description and image of the inputted garment to obtain extracted attributes; querying a knowledge graph using the extracted attributes to obtain matched attributes; retrieving candidate products from a garment pool using the matched attributes; extracting features from the inputted garment and the candidate products; determining the target garment from the candidate products based on grading scores between the features of the inputted garment and the features of the candidate products; and recommending the target garment. The knowledge graph includes nodes corresponding to type of clothes, category of clothes, attribute keys, values of attribute keys, context keys, values of context keys, combination of the values of the attribute keys and the type of clothes, and combination of the value of the attribute keys and the category of clothes.

Abstract: Provided are a layered oxide and a preparation method thereof, a positive electrode sheet, a secondary battery, a battery module, a battery pack and an electrical apparatus. The layered oxide includes an oxide with the general formula NaxMnyAaQbCcO2, where A is one or two of Fe and Ni; Q is one or more of transition metal elements containing 3d or 4d orbital electrons except Fe and Ni; C is one or two of Al and B, 0.66<x?1, 0.2?y?0.6, 0.3?a?0.6, 0<b?0.2, 0<c?0.1, and 1?b/c?100. The A element undergoes valence changes to provide charge compensation in a charge and discharge process, thereby improving the specific capacity of the layered oxide; the Q element and oxygen form a hybrid orbital, inhibiting irreversible oxygen losses and structure collapse of oxygen under a high voltage; the C element has a high ionic potential so as to effectively inhibit oxygen losses; and 1?b/c?100.

Abstract: A semiconductor device includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge, the semiconductor region including a first semiconductor region coupled with a drain terminal and a second semiconductor region coupled with a source terminal; and a third semiconductor region of a second conductivity type electrically coupled with a gate terminal, having a gate region and a net charge region, the net charge region disposed over the first semiconductor region and having a net charge in a depletion region that is substantially equal to the net charge of the at least one two-dimensional channel in the first semiconductor region when the semiconductor device is in an off-state.

Abstract: This disclosure provides semiconductor device including a first transistor with a first gate terminal, a first source terminal, and the first drain terminal, the first transistor being a depletion mode transistor and including a plurality of two-dimensional carrier channels of a conductivity type being one of a n-type or a p-type conductivity. The semiconductor device also includes a second transistor with a second gate terminal, a second source terminal, and a second drain terminal, the second transistor being an enhancement mode transistor, a gate-source interconnect forming an electrical connection between the first gate terminal and the second source terminal, and a drain-source interconnect forming an electrical connection between the first source terminal and the second drain terminal. The first transistor and the second transistor are fabricated on the same wafer or substrate.

Abstract: This disclosure provides a diode including a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type. The diode also includes a plurality of sidewalls exposed in the semiconductor region defining at least one trench extending through the at least one two-dimensional carrier channel and a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the plurality of sidewalls and in contact with the at least one two-dimensional carrier channel. The diode also includes an anode material in contact with at least a portion of the semiconductor region and in contact with at least a portion of the material of the second conductivity type, and a cathode material in contact with the at least one two-dimensional carrier channel.

Abstract: A mower includes a cutter, a deck, a power unit, and a rotary unit. The deck includes a housing formed with a cutting cavity that connects with a grass discharge passage through a first outlet. The rotary unit includes a rotary body that includes a blocking portion and a connecting portion connected to each other. The rotary unit is capable of rotating to a first position or a second position. When the rotary unit is at the first position, the blocking portion blocks the first outlet. When the rotary unit is at the second position, the first outlet is opened. The deck further includes a first base plate. The first base plate is at least partially located below the rotary unit. The blocking portion mates with the first base plate, and the first base plate limits the downward movement of the blocking portion.

Abstract: A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor material having a second conductivity type deposited into trenches formed in a first semiconductor material layer having a first conductivity type. A single lithography mask is used for etching trenches in the first semiconductor material, enabling cleaning of the trenches, and providing defined areas for the deposition of the second semiconductor material into the first semiconductor material. The presence of the areas of the second semiconductor material within the first semiconductor material creates a heterojunction beneath a metal for the formation of a first type of contact to the first semiconductor material and a second type of contact to the second type of material. By using a single mask for the etching, cleaning, and filling steps, misalignment issues plaguing devices having small (1-2 ?m) feature sizes is eliminated.

Abstract: Ga2O3-based rectifier structure and method of forming the same. A Schottky diode structure is combined with a metal-oxide-semiconductor structure to provide a metal oxide-type Schottky barrier diode (MOSSBD) rectifier that includes an n-type ?-Ga2O3 drift layer on a ?-Ga2O3 substrate, the drift layer having a plurality of spaced-apart semi-insulating regions formed by in-situ ion implantation of acceptor species at predefined spatially defined regions of the drift layer to create alternating areas of n-type and semi-insulating regions within the n-type drift layer. The thus-formed structure achieves high forward bias current with low specific on-resistance when the anode is biased with positive voltage and low leakage current when the device is operated under reverse bias.

Abstract: The disclosure discloses a microwave processing equipment for continuous flow liquids, and belongs to the technical field of microwave processing. The microwave processing equipment includes a feed preheating section, a microwave heating section and a cooling section. The microwave heating section includes a microwave generation system, a waveguide system, tuners, and a microwave absorption cavity. The waveguide system includes at least two waveguides. Each waveguide is installed at the microwave feed port formed in the outer wall of the microwave absorption cavity according to a predetermined angle greater than or equal to 15° and less than 90°.

Abstract: A diode includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge; a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the semiconductor region, the material of the second conductivity type having a net-charge in a depletion region that is substantially equal to the net-charge of the at least one two-dimensional channel in the semiconductor region when the diode is under reverse bias; an anode material in contact with at least a portion of the at least one two-dimensional channel and at least a portion of the material of the second conductivity type; and a cathode material in contact with the at least one two-dimensional carrier channel.