Abstract: A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.

Abstract: A semiconductor device comprises: a nitride semiconductor layer; an oxide insulating film formed to contact the nitride semiconductor layer; and a gate electrode formed to contact the oxide insulating film and made of metal nitride in a crystal orientation including at least one of the (200) orientation and the (220) orientation.

Abstract: The light-emitting device has a semiconductor layer including a p-layer, a light-emitting layer, and an n-layer, which are formed of a Group III nitride semiconductor, and an n-electrode on the n-layer. The device also has a device isolation trench which runs along the outer periphery of the semiconductor layer and which provides the semiconductor layer with a mesa shape; and an insulation film continuously provided on first to third regions, the first region being an outer peripheral region of the n-layer, the second region being the side surface of the trench, and the third region being the bottom surface of the device isolation trench. The n-electrode consists of two pad portions and a wire trace portion. The outer peripheral wire trace portion is formed as a frame completely contouring the periphery of the device.

Abstract: The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28?n×d1×2/??0.42 or 0.63?n×d1×2/??0.77, wherein n represents the refractive index of the transparent film, d1 represents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and ? represents the wavelength of the light emitted from the MQW layer.

Abstract: A group III nitride semiconductor light-emitting element having improved light extraction efficiency is provided. The light-emitting element has a plurality of dot-like grooves formed on a surface at the side joining to a p-electrode of a p-type layer. The groove has a depth reaching an n-type layer. Side surface of the groove is slanted such that a cross-section in an element surface direction is decreased toward the n-type layer from the p-type layer. Fine irregularities are formed on the surface at the side joining to an n-electrode of the n-type layer, except for a region on which the n-electrode is formed, and a translucent insulating film having a refractive index of from 1.5 to 2.3 is formed on the fine irregularities. Light extraction efficiency is improved by reflection of light to the n-type layer side by the groove and prevention of reflection to the n-type layer side by the insulating film.

Abstract: A semiconductor element includes a substrate including gallium oxide and having a predetermined plane direction, and a semiconductor layer formed on the substrate, in which, the semiconductor element is in chip form and further includes a first end face formed along a cleaved surface of the substrate and a second end face formed perpendicular to the first end face, wherein the first end face has a stronger cleavage property than the second end face.

Abstract: In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein an Al composition of the first layer which is the closest to the active layer is set to be lower than that of each of the other first layers, and wherein a doping amount of a p-type impurity in the first layer which is the closest to the active layer is set to be smaller than that of the p-type impurity of each of the other first layers or non-doped.

Abstract: A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.

Abstract: A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

Abstract: Provided is an HFET exhibiting reduced buffer leakage current. The HFET of the present invention includes an SiC substrate, an AlN layer, a graded AlGaN layer, a GaN layer, an AlGaN layer (Al compositional proportion: 20%), a source electrode, a gate electrode, and a drain electrode, wherein the AlN layer, the graded AlGaN layer, the GaN layer, and the AlGaN (Al: 20%) layer are successively stacked on the substrate, and the electrodes are formed on the AlGaN (Al: 20%) layer so as to be separated from one another. In the graded AlGaN layer, the Al compositional proportion gradually decreases from 30% (at the side facing the AlN layer) to 5% (at the side facing the GaN layer). Provision of the graded AlGaN layer reduces strain between the AlN layer and the GaN layer. Therefore, the HFET exhibits reduced buffer leakage current.

Abstract: A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.

Abstract: A method of making a semiconductor element which has a substrate formed of gallium oxide and a semiconductor layer formed on the substrate. The method has: a first dividing step that the substrate with the semiconductor layer formed thereon is divided into a strip bar along a first cleaved surface of the substrate; and a second dividing step that the strip bar is divided in a direction perpendicular to the first cleaved surface.

Abstract: A light-emitting element having: a gallium oxide substrate on a front surface of which a crystal of a semiconductor material having a light-emitting element part is grown; and a substrate protection layer formed on a back surface of the gallium oxide substrate. A method of making a light-emitting element having the steps of: forming a substrate protection layer on a back surface of a gallium oxide substrate; growing a crystal of a semiconductor material having a light-emitting element part on a front surface of the gallium oxide substrate; and assembling the light-emitting element so as to form a electrical connection for the light-emitting element part.

Abstract: A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.

Abstract: In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein an Al composition of the first layer which is the closest to the active layer is set to be lower than that of each of the other first layers, and wherein a doping amount of a p-type impurity in the first layer which is the closest to the active layer is set to be smaller than that of the p-type impurity of each of the other first layers or non-doped.