Abstract: An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ?L* satisfies ?L*<3.0, in which the ?L* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.

Abstract: An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ?L* satisfies ?L*<3.0, in which the ?L* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.