Patents by Inventor Yu-Hsun Wu
Yu-Hsun Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984375Abstract: In an embodiment, a device includes: a first integrated circuit die having a first contact region and a first non-contact region; an encapsulant contacting sides of the first integrated circuit die; a dielectric layer contacting the encapsulant and the first integrated circuit die, the dielectric layer having a first portion over the first contact region, a second portion over the first non-contact region, and a third portion over a portion of the encapsulant; and a metallization pattern including: a first conductive via extending through the first portion of the dielectric layer to contact the first integrated circuit die; and a conductive line extending along the second portion and third portion of the dielectric layer, the conductive line having a straight portion along the second portion of the dielectric layer and a first meandering portion along the third portion of the dielectric layer.Type: GrantFiled: April 18, 2023Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Hsun Chen, Yu-Ling Tsai, Jiun Yi Wu, Chien-Hsun Lee, Chung-Shi Liu
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Patent number: 11984419Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.Type: GrantFiled: July 26, 2022Date of Patent: May 14, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hung Chen, Yu-Nu Hsu, Chun-Chen Liu, Heng-Chi Huang, Chien-Chen Li, Shih-Yen Chen, Cheng-Nan Hsieh, Kuo-Chio Liu, Chen-Shien Chen, Chin-Yu Ku, Te-Hsun Pang, Yuan-Feng Wu, Sen-Chi Chiang
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Patent number: 11983052Abstract: A display device and a bezel thereof are provided. The display device includes a display panel and a bezel. The display panel has a first surface and a second surface. The first surface includes at least one pixel pad section, and the second surface includes at least one circuit pad section. The bezel includes a first surface connecting portion, a second surface connecting portion and at least one conductive wire. The edge of the display panel having the pixel pad section and the circuit pad section is accommodated between the first surface connecting portion and the second surface connecting portion. Each conductive wire has a first end and a second end. The first end is disposed on the first surface connecting portion and the second end is disposed on the second surface connecting portion. The part of the first connecting portion having the first end corresponds to the pixel pad section, and the part of the second connecting portion having the second end corresponds to the circuit pad section.Type: GrantFiled: May 28, 2021Date of Patent: May 14, 2024Assignee: AU OPTRONICS CORPORATIONInventors: Yi-Fan Chen, Che-Chia Chang, Shang-Jie Wu, Yu-Chieh Kuo, Yi-Jung Chen, Yu-Hsun Chiu, Mei-Yi Li, He-Yi Cheng
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Patent number: 11980076Abstract: A tiled display device includes two panels and two cover layers respectively disposed on the two panels. The two cover layers include a contact region. A top portion and a bottom portion of the contact region have a height H. One of the two cover layers has a thickness Tn. One of the two panels has a distance Xn between an upper surface of the one of the two panels and the bottom portion of the contact region. The one of the two panels is corresponding to the one of the two cover layers. The height H, the thickness Tn and the distance Xn satisfy the equation: 0<H/(Xn+Tn)<0.8.Type: GrantFiled: December 24, 2020Date of Patent: May 7, 2024Assignee: InnoLux CorporationInventors: Ping-Hsun Tsai, Shih-Fu Liao, I-An Yao, Yu-Chun Hsu, Yung-Hsun Wu, Sheng-Nan Fan
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Publication number: 20240139337Abstract: The present disclosure relates to a method for treating a cancer and/or cancer metastasis in a subject comprising administering to the subject irinotecan loaded in a mesoporous silica nanoparticle. The present disclosure also provides a conjugate comprising an agent loaded in a mesoporous silica nanoparticle (MSN) defining at least one pore and having at least one functional group on a sidewall of the at least one pore.Type: ApplicationFiled: November 2, 2022Publication date: May 2, 2024Inventors: Cheng-Hsun WU, SI-HAN WU, YI-PING CHEN, RONG-LIN ZHANG, CHUNG-YUAN MOU, Yu-Tse LEE
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Publication number: 20240133918Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.Type: ApplicationFiled: April 12, 2023Publication date: April 25, 2024Inventors: MAO-NAN CHANG, CHI-LUN LIU, HSUEH-LIANG CHOU, YI-SHAN WU, CHIAO-JUNG LIN, YU-HSUN HSUEH
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Publication number: 20240071330Abstract: A display device includes a display panel. The display panel has a functional display area. The functional display area includes a plurality of display pixels and a plurality of light transmitting regions. The plurality of display pixels are around by the plurality of the light transmitting regions. A boundary between one of the plurality of display pixels and one of the plurality of light transmitting regions comprises an arc segment.Type: ApplicationFiled: November 3, 2023Publication date: February 29, 2024Applicant: Innolux CorporationInventors: Chia-Hao Tsai, Ming-Jou Tai, Yi-Shiuan Cherng, Yu-Shih Tsou, You-Cheng Lu, Yung-Hsun Wu
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Publication number: 20230324804Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.Type: ApplicationFiled: June 14, 2023Publication date: October 12, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tsung SHIH, Yu-Hsun WU, Bo-Tsun LIU, Tsung-Chuan LEE
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Patent number: 11720025Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.Type: GrantFiled: June 23, 2022Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tsung Shih, Yu-Hsun Wu, Bo-Tsun Liu, Tsung-Chuan Lee
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Patent number: 11480869Abstract: A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.Type: GrantFiled: April 15, 2020Date of Patent: October 25, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chien-Hung Lai, Hao-Ming Chang, Chia-Shih Lin, Hsuan-Wen Wang, Yu-Hsin Hsu, Chih-Tsung Shih, Yu-Hsun Wu
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Publication number: 20220326598Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.Type: ApplicationFiled: June 23, 2022Publication date: October 13, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tsung SHIH, Yu-Hsun WU, Bo-Tsun LIU, Tsung-Chuan LEE
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Patent number: 11392022Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.Type: GrantFiled: June 12, 2020Date of Patent: July 19, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tsung Shih, Yu-Hsun Wu, Bo-Tsun Liu, Tsung-Chuan Lee
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Publication number: 20220114303Abstract: A hardware-in-the-loop (HIL) simulation device is provided, which includes a processing circuit and a pulse-width modulation (PWM) signal observation circuit. The PWM signal observation circuit includes an energy storage unit and the energy storage unit is coupled to the processing circuit. A signal source transmits a PWM signal to the processing circuit and the PWM signal observation circuit, and the energy storage unit is charged when the PWM signal is at high level. The processing circuit detects the voltage of the energy storage unit when detecting the falling edge of the PWM signal so as to calculate the duty cycle of the PWM signal.Type: ApplicationFiled: December 24, 2020Publication date: April 14, 2022Inventors: CHUN-AN LIN, WEN-CHE SHEN, CHIH-WEI YEH, PO-HUAN CHOU, CHUN-CHIEH CHANG, YU-HSUN WU
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Publication number: 20210389661Abstract: A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.Type: ApplicationFiled: June 12, 2020Publication date: December 16, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tsung SHIH, Yu-Hsun WU, Bo-Tsun LIU, Tsung-Chuan LEE
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Publication number: 20210063869Abstract: A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.Type: ApplicationFiled: April 15, 2020Publication date: March 4, 2021Inventors: CHIEN-HUNG LAI, HAO-MING CHANG, CHIA-SHIH LIN, HSUAN-WEN WANG, YU-HSIN HSU, CHIH-TSUNG SHIH, YU-HSUN WU
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Patent number: 10804761Abstract: The present disclosure provides a rotor mechanism includes a rotor core and a plurality of rotor bars. The rotor core has a plurality of insertion slots arranged along an edge of the rotor core. Each of the plurality of rotor bars has an insertion portion and two protruding portions. The insertion portions are respectively located in the plurality of insertion slots, wherein in each of the plurality of rotor bars, the two protruding portions are respectively connected to two opposite ends of the insertion portion and respectively protrude from two opposite sides of the rotor core, and the two protruding portions each has an extension direction, that has an angle with respect to an extension direction of the insertion portion, in order to clamp and fix the rotor core therebetween. In addition, the present disclosure also provides a method for manufacturing the rotor mechanism.Type: GrantFiled: December 4, 2017Date of Patent: October 13, 2020Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Hsun Wu, Ming-Mao Hsu, Yu-Yuan Chen
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Publication number: 20190140506Abstract: The present disclosure provides a rotor mechanism includes a rotor core and a plurality of rotor bars. The rotor core has a plurality of insertion slots arranged along an edge of the rotor core. Each of the plurality of rotor bars has an insertion portion and two protruding portions. The insertion portions are respectively located in the plurality of insertion slots, wherein in each of the plurality of rotor bars, the two protruding portions are respectively connected to two opposite ends of the insertion portion and respectively protrude from two opposite sides of the rotor core, and the two protruding portions each has an extension direction, that has an angle with respect to an extension direction of the insertion portion, in order to clamp and fix the rotor core therebetween. In addition, the present disclosure also provides a method for manufacturing the rotor mechanism.Type: ApplicationFiled: December 4, 2017Publication date: May 9, 2019Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Hsun Wu, Ming-Mao Hsu, Yu-Yuan Chen
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Patent number: 10199894Abstract: A rotor of an electric motor including a rotor core, two conductive end plates, a plurality of conductors and a casting metal is provided. The rotor core has a central hole and a plurality of slots surrounding the central hole at a predetermined interval. The two conductive end plates, disposed at two ends of the rotor core, have a plurality of fixing structures, respectively. A plurality of cavities is disposed between two neighboring fixing structures and the shape and the positions of the cavities correspond to that of the slots. The conductors are shaped as long bars and penetrate the slots. Two ends of the conductors are fixed by the fixing structures. The casting metal is injected into the cavities and the slots, and further covers the peripheral of the conductors and the fixing structures, two ends of the rotor core and outside of the two conductive end plates.Type: GrantFiled: December 22, 2015Date of Patent: February 5, 2019Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: I-Wei Lan, Yu-Hsun Wu, Yee-Pien Yang
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Publication number: 20170163111Abstract: A rotor of an electric motor including a rotor core, two conductive end plates, a plurality of conductors and a casting metal is provided. The rotor core has a central hole and a plurality of slots surrounding the central hole at a predetermined interval. The two conductive end plates, disposed at two ends of the rotor core, have a plurality of fixing structures, respectively. A plurality of cavities is disposed between two neighboring fixing structures and the shape and the positions of the cavities correspond to that of the slots. The conductors are shaped as long bars and penetrate the slots. Two ends of the conductors are fixed by the fixing structures. The casting metal is injected into the cavities and the slots, and further covers the peripheral of the conductors and the fixing structures, two ends of the rotor core and outside of the two conductive end plates.Type: ApplicationFiled: December 22, 2015Publication date: June 8, 2017Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: I-Wei LAN, Yu-Hsun WU, Yee-Pien YANG
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Publication number: 20170047805Abstract: The disclosure provides a stator module and a magnetic field generating structure which includes a magnetizer and an electrically conducting pipe. The electrically conducting pipe is wound around the magnetizer and has a passage inside. The passage has an outlet and an inlet opposite to each other. The electrically conducting pipe has a current input portion and a current output portion.Type: ApplicationFiled: October 24, 2016Publication date: February 16, 2017Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Se-Kang HO, Kuo-Lin CHIU, Chia-Min TING, Cheng-Min CHANG, Chen-Chih LIN, Hsien-Chang HUANG, Yu-Hsun WU