Abstract: A mask is provided wherein the mask has: a plate-like member having a mask pattern area and at least one pn junction; and a current supplying area which supplies a current to the pn junction, and a Peltier effect is caused by supplying a current to the pn junction, thereby enabling the temperature of the mask pattern area to be controlled. When this mask is used, reliable formation of an ion implanted region is enabled without forming a resist pattern.

Abstract: In a method of producing a semiconductor apparatus, when a thin film is formed on a semiconductor substrate in the CVD reactive chamber by the CVD method, a remaining region is provided where a gas for film formation remains to a proximity of a surface of the semiconductor substrate, and a CVD thin film is provided on the substrate by decomposing only the gas for film formation existing in the remaining region without supplying an additional gas from the outside of the remaining region to the remaining region. With the method, when the thin film is formed on the substrate by the CVD method, the thin film is efficiently deposited on the substrate in a reactive chamber by efficiently using a reactive gas for film formation introduced into a CVD reactive chamber, to thereby reduce cost of forming the thin film remarkably.

Abstract: In a method of producing a semiconductor apparatus, when a thin film is formed on a semiconductor substrate in the CVD reactive chamber by the CVD method, a remaining region is provided where a gas for film formation remains to a proximity of a surface of the semiconductor substrate, and a CVD thin film is provided on the substrate by decomposing only the gas for film formation existing in the remaining region without supplying an additional gas from the outside of the remaining region to the remaining region. With the method, when the thin film is formed on the substrate by the CVD method, the thin film is efficiently deposited on the substrate in a reactive chamber by efficiently using a reactive gas for film formation introduced into a CVD reactive chamber, to thereby reduce cost of forming the thin film remarkably.

Abstract: In a method of producing a semiconductor apparatus, when a thin film is formed on a semiconductor substrate in the CVD reactive chamber by the CVD method, a remaining region is provided where a gas for film formation remains to a proximity of a surface of the semiconductor substrate, and a CVD thin film is provided on the substrate by decomposing only the gas for film formation existing in the remaining region without supplying an additional gas from the outside of the remaining region to the remaining region. With the method, when the thin film is formed on the substrate by the CVD method, the thin film is efficiently deposited on the substrate in a reactive chamber by efficiently using a reactive gas for film formation introduced into a CVD reactive chamber, to thereby reduce cost of forming the thin film remarkably.

Abstract: A susceptor in a semiconductor wafer heat treatment apparatus holds a wafer such that the wafer is made flat at a heat treatment temperature. In particular, the susceptor is constituted by an elastic platy member which is convex upward with respect to the direction of the gravity. Therefore, when the wafer is subjected to a high-temperature heat treatment, a crystal defect in the wafer can be suppressed.

Abstract: A susceptor in a semiconductor wafer heat treatment apparatus holds a wafer such that the wafer is made flat at a heat treatment temperature. In particular, the susceptor is constituted by an elastic platy member which is convex upward with respect to the direction of the gravity. Therefore, when the wafer is subjected to a high-temperature heat treatment, a crystal defect in the wafer can be suppressed.

Abstract: An Si.sub.3 N.sub.4 layer is formed on a surface of a wafer, which is an object to be processed, at a high temperature of, for example, 780.degree. C., using a vertical thermal processing apparatus having a reaction tube of a double-wall structure comprising an inner tube and an outer tube in which a predetermined reduced-pressure status is maintained within the reaction tube while a reaction gas comprising, for example, SiH.sub.2 Cl.sub.2 and NH.sub.3 is made to flow from an inner side to an outer side of the inner tube by the action of a first gas supply pipe and first exhaust pipe provided in the thermal processing apparatus. Next, the temperature in the interior of the reaction tube is raised to, for example, 1000.degree. C., a reaction gas comprising, for example, H.sub.2 O vapor and HCl is made to flow from the outer side to the inner side of the inner tube by the action of a second gas supply pipe and second exhaust pipe, and an SiO.sub.2 layer is formed by the oxidation of the surface of the Si.sub.

Abstract: An Si.sub.3 N.sub.4 layer is formed on a surface of a wafer, which is an object to be processed, at a high temperature of, for example, 780.degree. C., using a vertical thermal processing apparatus having a reaction tube of a double-wall structure comprising an inner tube and an outer tube in which a predetermined reduced-pressure status is maintained within the reaction tube while a reaction gas comprising, for example, SiH.sub.2 Cl.sub.2 and NH.sub.3 is made to flow from an inner side to an outer side of the inner tube by the action of a first gas supply pipe and first exhaust pipe provided in the thermal processing apparatus. Next, the temperature in the interior of the reaction tube is raised to, for example, 1000.degree. C., a reaction gas comprising, for example, H.sub.2 O vapor and HCl is made to flow from the outer side to the inner side of the inner tube by the action of a second gas supply pipe and second exhaust pipe, and an SiO.sub.2 layer is formed by the oxidation of the surface of the Si.sub.

Abstract: A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree. < .theta. .ltoreq. 90.degree..