Abstract: An optical coupling device includes a primary conductive plate, a light-emitting part, a secondary conductive plate, a light-receiving part, and a first conductive part. The light-emitting part is located on the primary conductive plate, converts an electrical signal to light, and emits the light. The secondary conductive plate is spaced apart from the primary conductive plate, and faces the light-emitting part. The light-receiving part is disposed on the secondary conductive plate to face the light-emitting part, and converts light from the light-emitting part to an electrical signal. The first conductive part is disposed at a side facing the light-emitting part, and has a point on which an electric field generated by a potential difference between the primary conductive plate and the secondary conductive plate is concentrated.

Abstract: An optical reception circuit includes a first photodetector, a first transimpedance amplifier, a level shift circuit, a second photodetector, a second transimpedance amplifier, a peak hold circuit, and a comparator. The first transimpedance amplifier converts a first light current from the first photodetector to a first voltage. The level shift circuit generates a signal voltage from the first voltage. The second transimpedance amplifier converts the second light current from the second photodetector to a second voltage. The peak hold circuit holds a peak voltage of the second voltage as a first threshold voltage. The comparator compares the signal voltage with the first threshold voltage.

Abstract: An optical coupling device includes a primary conductive plate, a light-emitting part, a secondary conductive plate, a light-receiving part, and a first conductive part. The light-emitting part is located on the primary conductive plate, converts an electrical signal to light, and emits the light. The secondary conductive plate is spaced apart from the primary conductive plate, and faces the light-emitting part. The light-receiving part is disposed on the secondary conductive plate to face the light-emitting part, and converts light from the light-emitting part to an electrical signal. The first conductive part is disposed at a side facing the light-emitting part, and has a point on which an electric field generated by a potential difference between the primary conductive plate and the secondary conductive plate is concentrated.

Abstract: An optical reception circuit includes a first photodetector, a first transimpedance amplifier, a level shift circuit, a second photodetector, a second transimpedance amplifier, a peak hold circuit, and a comparator. The first transimpedance amplifier converts a first light current from the first photodetector to a first voltage. The level shift circuit generates a signal voltage from the first voltage. The second transimpedance amplifier converts the second light current from the second photodetector to a second voltage. The peak hold circuit holds a peak voltage of the second voltage as a first threshold voltage. The comparator compares the signal voltage with the first threshold voltage.

Abstract: The optical-coupling semiconductor device includes: a primary support plate and a secondary support plate facing each other and spaced apart a predetermined distance; a light emitting device situated on the primary support plate; and a light receiving device including a light receiving surface to receive light from a light emitting surface of the light emitting device. The light emitting device is situated on a surface facing the secondary support plate of the primary support plate so that the light emitting surface is oriented toward the secondary support plate. The light receiving device is situated on a surface facing the primary support plate of the secondary support plate so that the light receiving surface faces the light emitting surface of the light emitting device. The light emitting device is on the light receiving surface of the light receiving device.

Abstract: The optical-coupling semiconductor device includes: a primary support plate and a secondary support plate facing each other and spaced apart a predetermined distance; a light emitting device situated on the primary support plate; and a light receiving device including a light receiving surface to receive light from a light emitting surface of the light emitting device. The light emitting device is situated on a surface facing the secondary support plate of the primary support plate so that the light emitting surface is oriented toward the secondary support plate. The light receiving device is situated on a surface facing the primary support plate of the secondary support plate so that the light receiving surface faces the light emitting surface of the light emitting device. The light emitting device is on the light receiving surface of the light receiving device.

Abstract: A semiconductor pressure sensor includes n-type semiconductor regions, which are formed in a diaphragm of a semiconductor substrate, piezoresistive elements, which are respectively formed in the n-type semiconductor regions, and conductive shielding thin film layers, which are respectively formed on the piezoresistive elements through an insulating thin film layer, and the piezoresistive elements form a Wheatstone bridge circuit. Further, the n-type semiconductor regions and the conductive shielding thin film layers are electrically connected to each other through contacts formed in the diaphragm.

Abstract: A semiconductor relay of the invention includes first and second signal terminals, a substrate, a first switch circuit and a control circuit. The substrate includes signal patterns for forming a signal line between the first and second signal terminals. The first switch circuit has a semiconductor switch used to make or break the connection between the first and second signal terminals. The control circuit has a control IC for controlling the first switch circuit. The control IC is mounted on a land of the substrate. The land has a size corresponding to the control IC. A part or all of the land is included in a part of the signal patterns.

Abstract: A pressure sensor includes: a pressure conversion unit and a signal processing circuit installed in a semiconductor substrate. The pressure conversion unit includes: a diaphragm formed by partially thinning the semiconductor substrate; and a plurality of piezo resistive elements formed on a surface of the diaphragm. The signal processing circuit is constituted by a complementary metal-oxide semiconductor (CMOS) integrated circuit formed in a p-type conductive region disposed around the diaphragm on the surface of the semiconductor substrate, and the piezo resistive elements are provided by forming an n-type conductive region in the p-type conductive region on the surface of the diaphragm by diffusion of n-type impurities and diffusing p-type impurities in the n-type conductive region.

Abstract: A semiconductor relay of the invention includes first and second signal terminals, a substrate, a first switch circuit and a control circuit. The substrate includes signal patterns for forming a signal line between the first and second signal terminals. The first switch circuit has a semiconductor switch used to make or break the connection between the first and second signal terminals. The control circuit has a control IC for controlling the first switch circuit. The control IC is mounted on a land of the substrate. The land has a size corresponding to the control IC. A part or all of the land is included in a part of the signal patterns.

Abstract: An optical switch is provided, which is used to switch a light path(s) between at least three lenses spaced from each other in a horizontal direction, or in horizontal and vertical directions. This optical switch comprises a lens supporting member for supporting the lenses, fixed prism optically coupled to the lenses, and a movable prism supported to be movable relative to the lens supporting member. The movable prism is driven by an actuator between a first position where a light path is formed between two of the lenses by use of the fixed prism and a second position where a light path is formed between another two of the lenses by use of the movable prism.

Abstract: An optical switch comprises a prism for changing the direction of travel of incident light to be directed toward a further optical fiber; a switching mirror placed to be insertable and removable into and from between a lens block and the prism; and an actuator for driving the mirror, in which incident and emitting optical fibers are placed in the same facing, i.e. on one surface side, of the device body. This structure makes it possible for components to be used in common and integrated, and for the coupling surfaces between the lens block and the optical fibers to be gathered together in one place, thereby enabling cost reduction and size reduction.

Abstract: An optical switch comprises a prism for changing the direction of travel of incident light to be directed toward a further optical fiber; a switching mirror placed to be insertable and removable into and from between a lens block and the prism; and an actuator for driving the mirror, in which incident and emitting optical fibers are placed in the same facing, i.e. on one surface side, of the device body. This structure makes it possible for components to be used in common and integrated, and for the coupling surfaces between the lens block and the optical fibers to be gathered together in one place, thereby enabling cost reduction and size reduction.

Abstract: A semiconductor pressure sensor includes n-type semiconductor regions, which are formed in a diaphragm of a semiconductor substrate, piezoresistive elements, which are respectively formed in the n-type semiconductor regions, and conductive shielding thin film layers, which are respectively formed on the piezoresistive elements through an insulating thin film layer, and the piezoresistive elements form a Wheatstone bridge circuit. Further, the n-type semiconductor regions and the conductive shielding thin film layers are electrically connected to each other through contacts formed in the diaphragm.