Abstract: A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: An organic layer capable of forming surface areas having an adsorption property different from that of a periphery due to the chemical change of a surface functional group is formed on a board. The surface of the organic layer is patterned and oxidized by a scanning probe microscope to form an array pattern in which small sections for adsorbing nanoparticles are arranged. Then, nanoparticle dispersed solution is applied to the organic layer having the array pattern or the organic layer is dipped in the nanoparticle dispersed solution to form a particle layer on the organic layer. At this time, the nanoparticles in the nanoparticle dispersed solution are respectively fixed only onto the small sections. Therefore, a nanoparticle array on which groups of nanoparticles are arranged in an array can be obtained.

Abstract: A magnetic material having a structure of a material having a ferromagnetic phase at ordinary temperature as a core and a material having an antiferromagnetic phase at ordinary temperature surrounding the periphery of the core in the form of a shell, wherein a ratio between a volume of the ferromagnetic phase material and the volume of the antiferromagnetic phase material in the magnetic material is in a range where no exchange biasing field of the magnetic material appears and a rotational hysteresis loss of the magnetic material is made the maximum, a method of producing the same, and a magnetic recording medium using the same.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A gas sensor includes a first space for a measurement gas from a gas-introducing hole via a first diffusion rate-determining section, a main pumping means for controlling a partial pressure of oxygen in the measurement gas introduced into the first space to have a predetermined value, a second space for the measurement gas from the first space via a second diffusion rate-determining section, and a measuring pumping means for reducing or decomposing a NOx component in the measurement gas introduced from the second space via a third diffusion rate-determining section so that oxygen produced thereby is pumped out to detect a current generated by pumping out the oxygen. A ratio (Wc/We) between a width (We) of an end of a sensor element and a width (Wc) of the gas-introducing hole is not less than 30% and less than 70%.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A plasma processing unit of the present invention includes a processing container whose inner pressure can be reduced, a first electrode arranged in the processing container, a process gas supplying unit that supplies a process gas into the processing container, a high-frequency electric power source that outputs high-frequency electric power having a frequency in a VHF band, a matching unit electrically connected to the high-frequency electric power source and the first electrode for impedance matching, and a transmission line that transmits the high-frequency electric power from the high-frequency electric power source to the matching unit. A substrate to be processed is adapted to be arranged in the processing container. The high-frequency electric power transmitted to the first electrode is adapted to generate plasma in such a manner that the substrate to be processed can undergo a plasma process by means of the plasma.

Abstract: A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: There is provided a light-shielding cloth that includes a base fabric and an adhesive provided as a coating on the reverse side of the base fabric, the adhesive containing carbon black. There is also provided a light-shielding container for a light-sensitive material, the container having a slit-shaped opening through which the light-sensitive material is inserted into and taken out of the container, and the light-shielding cloth being bonded to the opening. There is also provided a recording material container that uses an adhesive containing a hydrogenated tackifying resin as a tackifying resin component. There is also provided a cloth that includes a base fabric and an adhesive provided as a coating on the reverse side of the base fabric, the adhesive containing a hydrogenated tackifying resin as a tackifying resin component, and a light-shielding container for a light-sensitive material, the container having a slit-shaped opening to which this cloth is bonded.

Abstract: A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.

Abstract: A lower cladding layer is laminated on a substrate and constituted of at least one layer. A light absorption layer is laminated on the lower cladding layer. An upper cladding layer is laminated above the light absorption layer and constituted of at least one layer. A light incident end surface is provided on at least one of the substrate and the lower cladding layer, and, when a light is made incident at a predetermined angle, enables the light to be absorbed in the light absorption layer and to be output as a current. An equivalent refractive index of the at least one of the substrate and the lower cladding layer is larger than that of the upper cladding layer. The predetermined angle is an angle enabling a light incident into the light absorption layer to be reflected at a lower surface of the upper cladding layer.

Abstract: A magnetic material having a structure of a material having a ferromagnetic phase at ordinary temperature as a core and a material having an antiferromagnetic phase at ordinary temperature surrounding the periphery of the core in the form of a shell, wherein a ratio between a volume of the ferromagnetic phase material and the volume of the antiferromagnetic phase material in the magnetic material is in a range where no exchange biasing field of the magnetic material appears and a rotational hysteresis loss of the magnetic material is made the maximum, a method of producing the same, and a magnetic recording medium using the same.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: To enable high density mass storage recording, for an upper magnetic layer, the length of a major axis of metallic magnetic powder, the type of binder, the hardness and particle size of abrasive powder, the condition of kneading, surface roughness and thickness are regulated, for a lower nonmagnetic layer, the length of a major axis of nonmagnetic powder, the ratio of the length of a major axis to that of a minor axis and the type of binder are regulated and further, a method of forming the upper magnetic layer and the lower nonmagnetic layer, the thickness of a nonmagnetic base material and Young's modulus are regulated.

Abstract: A fuel swirling means 15 for giving a swirling force at the upper stream of the valve sheet 7 to the fuel passing through the surrounding area of the valve body 13 and a nozzle 16 injecting a swirling fuel are provided. A fuel spray 47 injected out from the injection port 17 of the nozzle 16 is so formed that the orientation of the fuel spray is deflected in a definite direction on the basis of the longitudinal axis C of the fuel injection valve body, the reachable distance L1 of the fuel spray at the deflected side is longer and the reachable distance L2 of the fuel spray at another side opposite to the deflected side is shorter.