Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators.

Abstract: A source material gas (31) is supplied to a catalyst (30), a first heating medium (21) is caused to flow through a first heat exchange section (22) so that a temperature of a surface of the first heat exchange section (22) on a catalyst side is maintained higher than a dew point of a reacted gas (32), a second heating medium (51) is caused to flow through a second heat exchange section (52) so that a temperature of a surface of the second heat exchange section (52) on a space (4) side is maintained not higher than the dew point of the reacted gas (32), and a liquid obtained by condensation in the space (4) is allowed to fall down so as to be separated from the source material gas.

Abstract: A host controller in a display apparatus incudes a group determiner that determines an application as a determination factor, a drive setter that identifies a set that includes an upper-limit refresh rate, a lower-limit refresh rate, and a duty ratio of light emission and is set in response to the determination factor, and a drive controller that controls driving of the display apparatus in accordance with the identified set.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

Abstract: The present specification discloses a method of producing a concentrated carbonate aqueous solution. The present invention relates to a method for producing a concentrated carbonate aqueous solution, comprising a step of dewatering a hydrogen carbonate aqueous solution by means of a salt blocking membrane to prepare a concentrated hydrogen carbonate aqueous solution, wherein the concentrated hydrogen carbonate aqueous solution obtained in the above step is heated to thermally decompose the hydrogen carbonate into carbonate, carbon dioxide and water, and to evaporate water to obtain a concentrate of the carbonate aqueous solution.

Abstract: A discharge device is provided. The discharge device includes a liquid feed-discharger, and the liquid feed-discharger includes a feed unit configured to feed a liquid and a discharge unit having discharge holes configured to discharge the liquid fed by the feed unit. A ratio (X/Y) of a maximum cross-sectional area X (mm2) to a minimum cross-sectional area Y (mm2) of the liquid feed-discharger in a direction orthogonal to an axial direction of the liquid feed-discharger is from 1 to 5.

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

Abstract: A lithium metal composite oxide powder having a layered structure and containing at least Li, Ni, and an element X, in which, in a cumulative frequency distribution curve of R ranging 0% to 100% as a whole, R(90) that is a value of R at a point where a cumulative frequency from a small side of the R reaches 90% is 1.7 or more and 3.7 or less. R is a value of O/(Ni+X) that is a ratio of an amount of a substance of oxygen, which is indicated by O, to a total amount of substances of nickel and the element X, which is indicated by Ni+X, in one particle of a lithium metal composite oxide that is contained in the lithium metal composite oxide powder. The amounts of the substances of nickel, the element X, and oxygen are obtained by energy-dispersive X-ray (EDX) spectroscopy in which an accelerating voltage is set to 1100 V regarding the one particle of the lithium metal composite oxide.

Abstract: A nanoparticle includes a poorly-water-soluble physiologically active compound and an additive substance. A relative span factor (R.S.F) of the nanoparticle satisfies formula: 0<(R.S.F)?1.0, a volume average particle diameter of the nanoparticle is 200 nm or less, and the poorly-water-soluble physiologically active compound is covered with the additive substance.

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

Abstract: A semiconductor device with little variation in transistor characteristics is provided. A first insulator to a third insulator are formed. A fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film are sequentially formed over the third insulator. Shaping them into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer. The second conductive layer is removed. A fifth insulator and a sixth insulator are formed over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer. An opening reaching the second oxide is formed to form a third oxide, a fourth oxide, a first conductor, a second conductor, a seventh insulator, and an eighth insulator. A fifth oxide, a ninth insulator, and a third conductor are formed in the opening.

Abstract: A mobile body has a reflection control layer that reflects light in a wavelength region of sunlight or in a wavelength region of infrared radiation formed on a surface thereof. A mainstream outside the mobile body is heated by the reflected light to reduce air resistance of the mobile body. A refractive index of the reflection control layer is a value outside a range between a refractive index of a body-side substance and a refractive index of air. A thickness of the reflection control layer is equal to or larger than a value obtained by dividing 187.5 nanometers by a refractive index of the reflection control layer, and equal to or smaller than a value obtained by dividing 275,000 nanometers by a refractive index of the reflection control layer.

Abstract: A display device includes: a display unit; a display driver configured to drive the display unit; and a display-data generator configured to transfer a screenful of update display data to the display driver. The display driver includes a light-emission controller configured to control self-luminous elements to emit light, and a memory storing a screenful of the update display data. After a lapse of a predetermined time period from a driving stop time, the display driver reads the update display data stored in the memory and then uses the update display data to drive a screen, the driving stop time being a time when the display unit is stopped from driving based on the update display data. The display driver causes the self-luminous elements of the display unit to emit light, even during a display update or no display update performed on the display driver by the display-data generator.

Abstract: A host control unit is configured to set a transition interval between a first period for which an image is displayed at a first frame rate and a second period for which the image is displayed at a second frame rate different from the first frame rate, the transition interval being a period in which a frame rate is changed between the first frame rate and the second frame rate, and cause a display control unit to reduce a luminance difference of the image data in the transition interval, the luminance difference being caused when the frame rate is changed between the first frame rate and the second frame rate.

Abstract: A pharmaceutical composition including particles each containing a water-soluble base material and a poorly water-soluble compound, the water-soluble base material containing a rapidly water-soluble compound, wherein the poorly water-soluble compound is a kinase inhibitor and exists in an amorphous state in the water-soluble base material.

Abstract: The present invention provides a safe and highly efficient method for producing graphite oxide. The present invention relates to a method for producing graphite oxide by oxidizing graphite, the method including the step of oxidizing graphite by adding a permanganate to a liquid mixture containing graphite and sulfuric acid while maintaining the concentration of heptavalent manganese at 1% by mass or less in 100% by mass of the liquid mixture.

Abstract: An object of one embodiment of the present invention is to accurately derive an inclination of a line image sensor. One embodiment of the present invention is an image reading apparatus including: a line image sensor in which reading elements for reading an image are arrayed in a predetermined direction; a first derivation unit configured to, based on read data acquired by reading a chart on which a plurality of dot patterns is printed with the line image sensor, derive coordinates of each of the plurality of dot patterns; a second derivation unit configured to derive an inclination angle of the line image sensor based on the coordinates derived by the first derivation unit; and a first calculation unit configured to calculate a first correction value for correcting the inclination of the line image sensor based on the inclination angle derived by the second derivation unit.

Abstract: A particulate poly(lactic-co-glycolic) acid (PLGA) is provided. The particulate PLGA comprises a poly(lactic-co-glycolic) acid (PLGA), and has an average volume-based particle diameter of 80 nm or less and a relative span factor (R.S.F.) satisfying the following formula (1): 0 < R . S . F . ? 1.20 Formula ? ? ( 1 ) where R.S.F, is defined by (D90?D10)/D50, where D90, D50, and D10 respectively represent particle diameters at cumulative rates of 90%, 50%, and 10% by volume based on a cumulative particle size distribution counted from a small-particle side.