Patents by Inventor Yuichiro Kotake
Yuichiro Kotake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6911405Abstract: A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.Type: GrantFiled: November 20, 2001Date of Patent: June 28, 2005Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Youichi Yamamoto, Yuichiro Kotake, Hiroshi Ikakura, Shoji Ohgawara
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Patent number: 6852651Abstract: The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.Type: GrantFiled: October 2, 2001Date of Patent: February 8, 2005Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.Inventors: Yoshimi Shioya, Yuichiro Kotake, Tomomi Suzuki, Hiroshi Ikakura, Kazuo Maeda
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Patent number: 6645883Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.Type: GrantFiled: May 24, 2001Date of Patent: November 11, 2003Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.Inventors: Youichi Yamamoto, Hiroshi Ikakura, Tomomi Suzuki, Yuichiro Kotake, Yoshimi Shioya, Kouichi Ohira, Shoji Ohgawara, Kazuo Maeda
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Patent number: 6642157Abstract: There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.Type: GrantFiled: December 22, 2000Date of Patent: November 4, 2003Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.Inventors: Yoshimi Shioya, Yuichiro Kotake, Youichi Yamamoto, Tomomi Suzuki, Hiroshi Ikakura, Shoji Ohgawara, Kouichi Ohira, Kazuo Maeda
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Patent number: 6479409Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.Type: GrantFiled: February 23, 2001Date of Patent: November 12, 2002Assignees: Canon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura, Youichi Yamamoto, Yuichiro Kotake, Shoji Ohgawara, Makoto Kurotobi
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Publication number: 20020123218Abstract: A process gas containing any one of N2 or N2O is plasmanized and then a surface of a copper wiring layer is exposed to the plasmanized process gas, whereby a surface layer portion of a copper wiring layer is reformed and made into a copper diffusion preventing layer. According to this method, a noble semiconductor device can be provided, in which, along with increasing the operation speed, the copper diffusion is suppressed.Type: ApplicationFiled: November 20, 2001Publication date: September 5, 2002Applicant: CANON SALES CO., LTD.Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Youichi Yamamoto, Yuichiro Kotake, Hiroshi Ikakura, Shoji Ohgawara
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Publication number: 20020113316Abstract: The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. As for the constitution of the method of manufacturing a semiconductor device in which an insulating film 34 having a low dielectric constant is formed on a substrate 21 by allowing a film-forming gas to be converted into a plasma state and to react, the method comprises a step of forming a low-pressure insulating film 34a that constitutes the insulating film 34 on the substrate 21 by allowing said film-forming gas at first gas pressure to be converted into a plasma state and to react, and a step of forming a high-pressure insulating film 34b that constitutes the insulating film 34 on the low-pressure insulating film 34a by allowing the film-forming gas at second gas pressure being higher than the first gas pressure to be converted into a plasma state and to react.Type: ApplicationFiled: October 2, 2001Publication date: August 22, 2002Applicant: CONON SALES CO., LTD.Inventors: Yoshimi Shioya, Yuichiro Kotake, Tomomi Suzuki, Hiroshi Ikakura, Kazuo Maeda
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Publication number: 20020013068Abstract: The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27,or28 on a substrate targeted for film formation.Type: ApplicationFiled: May 24, 2001Publication date: January 31, 2002Applicant: CANON SALES CO., INC.Inventors: Youichi Yamamoto, Hiroshi Ikakura, Tomomi Suzuki, Yuichiro Kotake, Yoshimi Shioya, Kouichi Ohira, Shoji Ohgawara, Kazuo Maeda
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Publication number: 20010034140Abstract: There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.Type: ApplicationFiled: December 22, 2000Publication date: October 25, 2001Applicant: CANON SALES CO., INC.Inventors: Yoshimi Shioya, Yuichiro Kotake, Youichi Yamamoto, Tomomi Suzuki, Hiroshi Ikakura, Shoji Ohgawara, Kouichi Ohira, Kazuo Maeda
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Publication number: 20010031563Abstract: Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.Type: ApplicationFiled: February 23, 2001Publication date: October 18, 2001Applicant: CANON SALES CO., INC.Inventors: Yoshimi Shioya, Kouichi Ohira, Kazuo Maeda, Tomomi Suzuki, Hiroshi Ikakura, Youichi Yamamoto, Yuichiro Kotake, Shoji Ohgawara, Makoto Kurotobi