Patents by Inventor Yuichiro Morozumi
Yuichiro Morozumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230137865Abstract: A method of forming a crystalline structure film containing strontium, titanium, and oxygen on a substrate, includes: forming an amorphous structure film on a surface of a titanium nitride film formed on a surface of the substrate, the amorphous structure film containing strontium and oxygen and having a titanium content adjusted so that a content ratio of titanium to strontium based on the number of atoms becomes a value in a range of 0 or more and less than 1.0; and obtaining a crystalline structure film containing strontium, titanium and oxygen and containing titanium diffused from the titanium nitride film by heating the substrate, on which the amorphous structure film is formed, at a temperature of 500 degrees C. or higher.Type: ApplicationFiled: October 26, 2022Publication date: May 4, 2023Inventors: Takayuki KARAKAWA, Kotaro MIYATANI, Hideo NAKAMURA, Katsushige HARADA, Yuichiro MOROZUMI
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Patent number: 10133265Abstract: A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.Type: GrantFiled: July 26, 2016Date of Patent: November 20, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Aaron Archer Waterman, Yuichiro Morozumi, Tetsushi Ozaki, Sanjeev Kaushal, Sukesh Janubhai Patel
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Publication number: 20160334782Abstract: A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.Type: ApplicationFiled: July 26, 2016Publication date: November 17, 2016Inventors: Aaron Archer Waterman, Yuichiro Morozumi, Tetsushi Ozaki, Sanjeev Kaushal, Sukesh Janubhai Patel
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Patent number: 9472394Abstract: A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.Type: GrantFiled: January 14, 2014Date of Patent: October 18, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroki Murakami, Toshiyuki Ikeuchi, Jun Sato, Yuichiro Morozumi
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Patent number: 9405289Abstract: A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.Type: GrantFiled: December 6, 2012Date of Patent: August 2, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Aaron Archer Waterman, Yuichiro Morozumi, Tetsushi Ozaki, Sanjeev Kaushal, Sukesh Janubhai Patel
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Patent number: 9390912Abstract: A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.Type: GrantFiled: January 29, 2014Date of Patent: July 12, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroki Murakami, Koji Sasaki, Keisuke Suzuki, Yuichiro Morozumi
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Patent number: 9293543Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.Type: GrantFiled: October 2, 2013Date of Patent: March 22, 2016Assignees: TOKYO ELECTRON LIMITED, OSAKA UNIVERSITYInventors: Shuji Azumo, Yusaku Kashiwagi, Yuichiro Morozumi, Yu Wamura, Katsushige Harada, Kosuke Takahashi, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi
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Patent number: 9230799Abstract: A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.Type: GrantFiled: January 23, 2012Date of Patent: January 5, 2016Assignees: TOHOKU UNIVERSITY, Fuji Electric Co., Ltd., TOKYO ELECTRON LIMITEDInventors: Akinobu Teramoto, Hiroshi Kambayashi, Hirokazu Ueda, Yuichiro Morozumi, Katsushige Harada, Kazuhide Hasebe, Tadahiro Ohmi
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Patent number: 9103029Abstract: A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the processing space and a slit-like exhaust port on the opposite side of the processing space from the nozzle housing area; a lid for closing the bottom opening of the processing container structure; a support structure for supporting the objects and which can be inserted into and withdrawn from the processing container structure; a gas introduction means including a gas nozzle housed in the nozzle housing area; an exhaust means including a plurality of exhaust systems for exhausting the atmosphere in the processing container structure; a heating means for heating the objects; and a control means for controlling the gas introduction means, the exhaust means and the heating means.Type: GrantFiled: June 16, 2011Date of Patent: August 11, 2015Assignee: Tokyo Electron LimitedInventors: Yu Wamura, Yuichiro Morozumi, Izumi Sato, Shinji Asari
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Patent number: 9034718Abstract: Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.Type: GrantFiled: August 10, 2012Date of Patent: May 19, 2015Assignee: Tokyo Electron LimitedInventors: Keisuke Suzuki, Kentaro Kadonaga, Yuichiro Morozumi
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Publication number: 20140367699Abstract: The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.Type: ApplicationFiled: September 2, 2014Publication date: December 18, 2014Applicants: TOHOKU UNIVERSITY, FUJI ELECTRIC CO., LTD., TOKYO ELECTRON LIMITEDInventors: Akinobu TERAMOTO, Hiroshi KAMBAYASHI, Hirokazu UEDA, Yuichiro MOROZUMI, Katsushige HARADA, Kazuhide HASEBE, Tadahiro OHMI
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Patent number: 8815112Abstract: Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid.Type: GrantFiled: September 1, 2011Date of Patent: August 26, 2014Assignee: Tokyo Electron LimitedInventors: Tsuyoshi Mizuno, Hiromitsu Namba, Yuichiro Morozumi, Shingo Hishiya, Katsushige Harada, Fumiaki Hayase
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Publication number: 20140213067Abstract: A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.Type: ApplicationFiled: January 29, 2014Publication date: July 31, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroki MURAKAMI, Koji SASAKI, Keisuke SUZUKI, Yuichiro MOROZUMI
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Publication number: 20140199853Abstract: A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed.Type: ApplicationFiled: January 14, 2014Publication date: July 17, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Hiroki MURAKAMI, Toshiyuki IKEUCHI, Jun SATO, Yuichiro MOROZUMI
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Publication number: 20140163712Abstract: A system and method for autonomously tracing a cause of particle contamination during semiconductor manufacture is provided. A contamination analysis system analyzes tool process logs together with particle contamination data for multiple process runs to determine a relationship between systematic particle contamination levels and one or more tool parameters. This relationship is used to predict expected contamination levels associated with regular usage of the tool, and to identify which tool parameters have the largest impact on expected levels of particle contamination. The contamination analysis system also identifies process logs showing unexpected deviant particle contamination levels that exceed expected contamination levels, and traces the cause of the deviant particle contamination to particular process log parameter events.Type: ApplicationFiled: December 6, 2012Publication date: June 12, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Aaron Archer Waterman, Yuichiro Morozumi, Tetsushi Ozaki, Sanjeev Kaushal, Sukesh Janubhai Patel
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Patent number: 8735304Abstract: A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.Type: GrantFiled: March 26, 2012Date of Patent: May 27, 2014Assignees: Elpida Memory Inc., Tokyo Electron LimitedInventors: Yuichiro Morozumi, Takuya Sugawara, Koji Akiyama, Shingo Hishiya, Toshiyuki Hirota, Takakazu Kiyomura
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Publication number: 20140094027Abstract: Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure.Type: ApplicationFiled: October 2, 2013Publication date: April 3, 2014Applicants: OSAKA UNIVERSITY, TOKYO ELECTRON LIMITEDInventors: Shuji AZUMO, Yusaku KASHIWAGI, Yuichiro MOROZUMI, Yu WAMURA, Katsushige HARADA, Kosuke TAKAHASHI, Heiji WATANABE, Takayoshi SHIMURA, Takuji HOSOI
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Patent number: 8642127Abstract: According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.Type: GrantFiled: February 24, 2012Date of Patent: February 4, 2014Assignee: Tokyo Electron LimitedInventors: Yuichiro Morozumi, Shingo Hishiya, Katsushige Harada
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Publication number: 20130292700Abstract: A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.Type: ApplicationFiled: January 23, 2012Publication date: November 7, 2013Applicants: TOHOKU UNIVERSITY, TOKYO ELECTRON LIMTED, Advanced Power Device Research AssociationInventors: Akinobu Teramoto, Hiroshi Kambayashi, Hirokazu Ueda, Yuichiro Morozumi, Katsushige Harada, Kazuhide Hasebe, Tadahiro Ohmi
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Patent number: 8389421Abstract: When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film.Type: GrantFiled: May 25, 2011Date of Patent: March 5, 2013Assignee: Tokyo Electron LimitedInventors: Katsushige Harada, Yuichiro Morozumi, Shingo Hishiya