Abstract: A chemical solution synthesis device comprises a chemical solution holding unit, a reaction vessel, a first chemical solution feed unit, a chemical solution feed and discharge unit, and a second chemical solution feed unit. The chemical solution holding unit is configured to hold a chemical solution. The chemical solution and carriers are reacted in the reaction vessel. The chemical solution is transferable from the chemical solution holding unit to the reaction vessel without coming into contact with atmosphere. The first chemical solution feed unit is connected to the reaction vessel and configured to supply the chemical solution to the reaction vessel. The chemical solution feed and discharge unit is provided vertically above the first chemical solution feed unit. The second chemical solution feed unit is configured to suppress adhesion of the carriers to the reaction vessel.

Abstract: An information processing apparatus (1) included in a welding training system includes a transmittance adjuster (14) capable of adjusting a transmittance of a window of a welding helmet in virtual space in multiple grades, and a display controller (17) configured to cause a display of an HMD (2) to display a situation of a welding operation in the virtual space at an illuminance corresponding to the adjusted transmittance. The transmittance adjuster (14) adjusts the transmittance based on a skill level of a trainee determined by a skill level determination unit (13).

Abstract: A device which enables protection against an abruptly rising pulse such as an electromagnetic pulse in a compact size at a device level and a semiconductor package in which the device is mounted are provided. The semiconductor package (1, 2, 3) includes a substrate (12, 60, 70), an IC chip (21) arranged on the substrate (12, 60, 70), a plurality of connection parts (30) configured to connect the IC chip (21) to the outside, a plurality of bonding wires (40) configured to connect the IC chip (21) and corresponding ones of the plurality of connection parts (30), and a mechanism configured to bypass surge current applied to any of the plurality of connection parts (30) from the connection parts (30) to a ground potential via a path different from the plurality of bonding wires (40).

Abstract: The railway axle according to this disclosure has a pair of fitting portions and which each include a fitting portion hardened layer and a base metal portion, and a center parallel portion which includes a center parallel portion hardened layer and the base metal portion. The base metal portion has the chemical composition described in the description. In a region having the Vickers hardness of 480 HV or more in the center parallel portion hardened layer, a dislocation density p obtained based on a CoK? characteristic X-ray diffraction result is 2.5×1016 m?2 or less, a half-value width B of the (211) diffraction plane is 1.34 degrees or less, and the dislocation density p and the half-value width B of the (211) plane obtained by X-ray diffraction satisfy Formula (1). (?4.8×1016×B+8.5×1016)/??1.

Abstract: An energy storage apparatus includes an energy storage device, a sensor mounted on the energy storage device, a holding member disposed on the energy storage device and holding the sensor in a state where a detection surface of the sensor is exposed toward the energy storage device and an outer case accommodating the energy storage device, the sensor, and the holding member.

Abstract: An energy storage apparatus includes: an energy storage device unit having at least one energy storage device; an electric device electrically connected to the energy storage device unit, an electric wire, and a restriction part. The electric wire is connected to the electric device via a connector. The restriction part restricts a posture of a protruding portion, which is a portion of the electric wire protruding from the connector, to a posture inclined downward from the connector.

Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

Abstract: A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

Abstract: An energy storage apparatus including: an outer case having a bottom wall and a side wall; an energy storage device; an insulating member disposed at a position where the energy storage device is sandwiched between the bottom wall and the insulating member; a first adhesive layer which makes the insulating member and the energy storage device adhere to each other; and a second adhesive layer which makes the insulating member and the side wall adhere to each other.

Abstract: An energy storage apparatus includes: an energy storage device which includes an electrode terminal; an outer case; and an external connection terminal. The external connection terminal includes: an external connection part to be connected to an external conductive member; a circuit breaking part; and a bus bar which connects the electrode terminal or the external connection part with the circuit breaking part, and which is formed in the outer case by insert molding. The bus bar includes an outer exposed portion on which the circuit breaking part is detachably mounted from the outside of the outer case.

Abstract: A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

Abstract: A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

Abstract: An energy storage apparatus including: an outer case having an opening portion; a plurality of energy storage devices arranged in a first direction in the outer case; and a positioning projection disposed on opposedly facing inner side surfaces of the outer case, extending in a second direction substantially orthogonal to the first direction toward a lower side of the outer case opposite from the opening, and being capable of positioning the adjacently disposed energy storage devices at the lower side of the outer case.

Abstract: A stereoilithography apparatus includes a first optical system, a second optical system, an area setter and a moving mechanism. The first optical system emits a first light to a photocurable material. The second optical system emits a second light to the photocurable material such that a target area is formed in the photocurable material. The target area linearly intersects the first light in a first direction. The area setter sets a first area and a second area for at least one of the first light and the second light in the first direction at the target area. The first area and the second areas have different optical properties from each other. The moving mechanism moves the target area. The stereolithography apparatus cures the photocurable material at the target area.

Abstract: An energy storage apparatus includes: an energy storage device which includes an electrode terminal; an outer case; and an external connection terminal. The external connection terminal includes: an external connection part to be connected to an external conductive member; a circuit breaking part; and a bus bar which connects the electrode terminal or the external connection part with the circuit breaking part, and which is formed in the outer case by insert molding. The bus bar includes an outer exposed portion on which the circuit breaking part is detachably mounted from the outside of the outer case.

Abstract: A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.

Abstract: An energy storage apparatus provided with an energy storage device is provided with an electrode terminal disposed on the energy storage device, and a bus bar placed on a surface of the electrode terminal and connected to the electrode terminal. The bus bar includes a plurality of opening portions formed such that the surface of the electrode terminal is exposed.

Abstract: A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.

Abstract: In one embodiment, an illumination device includes a light-guiding unit having a light output surface which outputs light and a back surface facing the light output surface, wherein the light-guiding unit has a curved surface in a region of the back surface farther than a first position on the back surface that is away by a first distance from an axis passing the light output surface and the back surface, and a rough surface in a region of the light output surface farther than a second position on the light output surface that is away by a second distance from the axis in a same direction as a direction from the axis toward the first position, and where an intersection of the axis and the back surface is an origin point, and a direction of the axis from the back surface to the light output surface is positive, a normal line of the curved surface intersects with the axis at the positive side of the axis, and an angle formed by a normal line vector at the second position in a direction toward the light output s