Patents by Inventor Yuji Ando
Yuji Ando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10260196Abstract: One of the purposes of the present invention is to provide an emulsion composition which has a small initial diameter and good stability with time and dilution stability. Further, another purpose of the present invention is to provide an emulsion composition which has high adsorption ability to fibers and provides a hydrophilic surface of the fibers.Type: GrantFiled: June 30, 2017Date of Patent: April 16, 2019Assignee: Shin-Etsu Chemical Co., Ltd.Inventor: Yuji Ando
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Patent number: 10182232Abstract: An information processing apparatus includes: a storage unit configured to store information on a plurality of encoders; and a control unit configured to be capable of transmitting a first instruction signal for instructing the plurality of encoders to encode input video data under first encoding conditions different for each of the plurality of encoders, and obtaining, if an image quality of the video data encoded by the plurality of encoders does not satisfy a predetermined criteria, predetermined information associated with the image quality from the encoded video data and transmitting, based on the predetermined information, a second instruction signal for instructing to encode the input video data under a second encoding condition different from the first encoding conditions to at least one encoder of the plurality of encoders.Type: GrantFiled: March 12, 2015Date of Patent: January 15, 2019Assignee: SONY CORPORATIONInventors: Masakazu Kouno, Yuji Ando
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Publication number: 20180346661Abstract: The present invention aims to provide an emulsion composition of an organopolysiloxane which has enhanced stability in a water-soluble solvent. The invention provides an organosilicone emulsion composition comprising (A) 100 parts by mass of an organopolysiloxane having a viscosity of at least 500 Pa·s at 25° C.; (B) 1 to 50 parts by mass of a polyether group-containing organosiloxysilicate; (C) 1 to 50 parts by mass of an organopolysiloxane having polyoxyalkylene residues at the both terminals; (D) 1 to 50 parts by mass of a nonionic surfactant; and (E) 10 to 1,000 parts by mass of water.Type: ApplicationFiled: June 5, 2018Publication date: December 6, 2018Applicant: Shin-Etsu Chemical Co., Ltd.Inventor: Yuji ANDO
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Publication number: 20180233590Abstract: In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer).Type: ApplicationFiled: March 16, 2018Publication date: August 16, 2018Inventors: Takashi Inoue, Tatsuo Nakayama, Yuji Ando, Yasuhiro Murase, Kazuki Ota, Hironobu Miyamoto, Katsumi Yamanoguchi, Naotaka Kuroda, Akio Wakejima, Yasuhiro Okamoto
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Patent number: 10015393Abstract: Provided is an imaging control device including a result receiving unit configured to receive an example image selected by an image processing device used for image processing using image information, the image information being information regarding an image captured by an imaging unit used for image capturing, a selection result transmitting unit configured to transmit information regarding the example image received by the result receiving unit to the image processing device, a setting receiving unit configured to receive setting information generated by the image processing device based on the example image transmitted from the selection result transmitting unit, the setting information indicating a setting condition when image capturing is performed like the example image, and a setting change unit configured to change an imaging setting of the imaging unit using the setting information received by the setting receiving unit.Type: GrantFiled: January 11, 2013Date of Patent: July 3, 2018Assignee: SONY CORPORATIONInventors: Hironari Sakurai, Jun Kimura, Yuji Ando, Keisuke Yamaoka, Takefumi Nagumo, Masashi Eshima
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Publication number: 20180118891Abstract: One of the purposes of the present invention is to provide a polyether-modified siloxane having a good thickening property, in particular a good thickening property for an aqueous liquid. The present invention provides a polyether-modified siloxane represented by the following general formula (1): Sx-(CH2)aCOO—(C2H4O)n—(C3H6O)s—CO(CH2)a-Sx ??(1) wherein n is an integer of from 50 to 10000, s is an integer which meets the equation, 0<=s<=n/50, a is an integer of from 2 to 40, and Sx is, independently of each other, an organo(poly)siloxanyl group represented by the following formula (a) or (b): wherein R is, independently of each other, a hydrogen atom, a hydroxyl group, an alkoxyl group, or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms, m is an integer of from 0 to 350, and m? is an integer of from 0 to 348, wherein a ratio of a total molecular weight of the Sx-(CH2)aCO moieties to a molecular weight of the O(C2H4O)n(C3H6O)s moiety is 0.Type: ApplicationFiled: October 30, 2017Publication date: May 3, 2018Applicant: Shin-Etsu Chemical Co., Ltd.Inventor: Yuji ANDO
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Patent number: 9954087Abstract: In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer).Type: GrantFiled: August 27, 2014Date of Patent: April 24, 2018Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Takashi Inoue, Tatsuo Nakayama, Yuji Ando, Yasuhiro Murase, Kazuki Ota, Hironobu Miyamoto, Katsumi Yamanoguchi, Naotaka Kuroda, Akio Wakejima, Yasuhiro Okamoto
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Patent number: 9895296Abstract: Provided is a cosmetic preparation superior in stability and feel. The cosmetic preparation contains an (a) organopolysiloxane emulsion in an amount of not smaller than 0.1% by mass. This organopolysiloxane emulsion is obtained through emulsion polymerization and contains octamethylcyclotetrasiloxane in an amount of not larger than 1,000 ppm by mass.Type: GrantFiled: November 28, 2013Date of Patent: February 20, 2018Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Yuji Ando, Shinji Irifune
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Publication number: 20180027257Abstract: There is provided an encoder that enables an image of a field-of-view range of a user to be displayed immediately. The encoder encodes, for a pair of opposite surfaces among a plurality of surfaces of a model for an omnidirectional image, a first composite image obtained by combining an omnidirectional image of a first surface of a high resolution and an omnidirectional image of a second surface of a resolution lower than the high resolution and a second composite image obtained by combining an omnidirectional image of the second surface of the high resolution and an omnidirectional image of the first surface of a low resolution. For example, the present disclosure can be applied to an image display system or the like.Type: ApplicationFiled: February 17, 2016Publication date: January 25, 2018Applicants: SONY CORPORATION, SONY INTERACTIVE ENTERTAINMENT INC.Inventors: Nobuaki IZUMI, Yuji ANDO, Takayuki SHINOHARA
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Publication number: 20180002861Abstract: One of the purposes of the present invention is to provide an emulsion composition which has a small initial diameter and good stability with time and dilution stability. Further, another purpose of the present invention is to provide an emulsion composition which has high adsorption ability to fibers and provides a hydrophilic surface of the fibers.Type: ApplicationFiled: June 30, 2017Publication date: January 4, 2018Applicant: Shin-Etsu Chemical Co., Ltd.Inventor: Yuji ANDO
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Publication number: 20180002489Abstract: One of the purposes of the present invention is to provide an aminoalkyl group-containing siloxane, in particular an aminoalkyl group- and polyoxyalkylene group-containing siloxane, in which an amount of a cyclic siloxane as an impurity contained is decreased, and a method for preparing the same.Type: ApplicationFiled: June 30, 2017Publication date: January 4, 2018Applicant: Shin-Etsu Chemical Co., Ltd.Inventor: Yuji ANDO
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Patent number: 9768257Abstract: A high electron mobility transistor having a channel layer, electron supply layer, source electrode, and drain electrode is included so as to have a cap layer formed on the electron supply layer between the source and drain electrodes and having an inclined side surface, an insulating film having an opening portion on the upper surface of the cap layer and covering the side surface thereof, and a gate electrode is formed in the opening portion and extending, via the insulating film, over the side surface of the cap layer on the drain electrode side. The gate electrode having an overhang on the drain electrode side can reduce the peak electric field.Type: GrantFiled: January 13, 2014Date of Patent: September 19, 2017Assignee: Renesas Electronics CorporationInventors: Kazuki Ota, Yuji Ando
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Publication number: 20170257633Abstract: There is provided an encoding apparatus, including an intra-block determination section which determines that a prediction mode of a block is a forced intra-prediction mode, by a frequency based on a priority of each block of an image to be encoded, an encoding section which encodes the block, to which the prediction mode has been determined to be an intra-prediction mode by the intra-block determination section, with the intra-prediction mode, and a transmission section which transmits an encoded result of the image to be encoded obtained by the encoding section, and the prediction mode of the image.Type: ApplicationFiled: May 23, 2017Publication date: September 7, 2017Applicants: Sony corporation, Sony Interactive Entertainment Inc.Inventors: Nobuyoshi Miyahara, Yuji Ando, Ryohei Okada, Osamu Ota
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Patent number: 9693065Abstract: There is provided an encoding apparatus, including an intra-block determination section which determines that a prediction mode of a block is a forced intra-prediction mode, by a frequency based on a priority of each block of an image to be encoded, an encoding section which encodes the block, to which the prediction mode has been determined to be an intra-prediction mode by the intra-block determination section, with the intra-prediction mode, and a transmission section which transmits an encoded result of the image to be encoded obtained by the encoding section, and the prediction mode of the image.Type: GrantFiled: October 17, 2012Date of Patent: June 27, 2017Assignees: Sony Corporation, Sony Interactive Entertainment Inc.Inventors: Nobuyoshi Miyahara, Yuji Ando, Ryohei Okada, Osamu Ota
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Publication number: 20170073517Abstract: Provided is a method for producing an organopolysiloxane emulsion composition which contains an organopolysiloxane having a trialkyl group at a terminal thereof and having a viscosity of 50,000 mm2/s or more at 25° C., within a shorter time compared with the conventional methods. A method for producing an emulsion composition which contains an organopolysiloxane having a viscosity of 50,000 mm2/s or more at 25° C. and capped with a trialkylsilyl group, said method comprising: (I) emulsifying a mixture comprising (A) an organopolysiloxane, (B) a nonionic surfactant, (C) an anionic surfactant, (D-1) an acidic compound and (E-1) water to prepare an emulsion composition; (II) adding (D-2) an acidic compound and (E-2) water to the emulsion composition to perform emulsion polymerization; and (III) adding 0.001 part by mass or more of (F) a compound to the resultant product to perform emulsion polymerization again.Type: ApplicationFiled: May 12, 2015Publication date: March 16, 2017Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Akihiro KOBAYASHI, Yuji ANDO, Yuko TAKADA, Shunji AOKI
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Patent number: 9540541Abstract: An organopolysiloxane emulsion composition produced by the emulsion polymerization of an emulsion that comprises (A) an organopolysiloxane containing a silanol group or an organooxy group, (B) a nonionic surfactant represented by formula (2): R2O(EO)a(PO)bR3 (wherein R2 represents an alkyl group or R4(CO)—; R4 represents an alkyl group; R3 represents an alkyl group or R5(CO)—; R5 represents an alkyl group; EO represents an ethylene oxide group; PO represents an alkylene oxide group; and a and b independently represent 0 to 100, wherein a+b>0 and the sequence of EO and PO may be random or in the form of a block) and (C) a surfactant other than the component (B), and may additionally comprise (D) a polymerization catalyst and (E) water if required. According to the present invention, it becomes possible to produce an extremely stable organopolysiloxane emulsion composition without inhibiting polymerization during the emulsion polymerization of an organopolysiloxane having condensation reactivity.Type: GrantFiled: March 28, 2013Date of Patent: January 10, 2017Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventor: Yuji Ando
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Patent number: 9530879Abstract: A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of In1-zAlzN (0?z?1). The channel layer includes a composition of AlxGa1-xN (0?x?1). A recess is provided in a region between the source electrode and the drain electrode, wherein the recess goes through the electron supplying layer to a depth that exposes the channel layer, and the gate electrode is disposed on a gate insulating film that covers a bottom surface and an inner wall surface of the recess.Type: GrantFiled: November 20, 2015Date of Patent: December 27, 2016Assignee: Renesas Electronics CorporationInventors: Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue, Kazuki Ota
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Publication number: 20160165246Abstract: The present disclosure relates to an image processing device and a method thereof which enable a high image quality process with higher efficiency. A decoding section outputs, in addition to a decoded image, hierarchical block split information of a CU, a PU, and a TU to an image processing section as motion vector information and image split information that are encoded information included in a bit stream used in decoding. The image processing section specifies a dynamic body area from the decoded image supplied from the decoding section using the hierarchical block split information that is the encoded information from the decoding section, and performs a high image quality process. The present disclosure can be applied to, for example, an image processing device which performs a high image quality process on a decoded image that has been decoded.Type: ApplicationFiled: July 8, 2014Publication date: June 9, 2016Inventors: TAKEFUMI NAGUMO, YUJI ANDO, NOBUAKI IZUMI
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Publication number: 20160079409Abstract: A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of In1-zAlzN (0?z?1). The channel layer includes a composition of AlxGa1-xN (0?x?1). A recess is provided in a region between the source electrode and the drain electrode, wherein the recess goes through the electron supplying layer to a depth that exposes the channel layer, and the gate electrode is disposed on a gate insulating film that covers a bottom surface and an inner wall surface of the recess.Type: ApplicationFiled: November 20, 2015Publication date: March 17, 2016Applicant: Renesas Electronics CorporationInventors: Yasuhiro OKAMOTO, Yuji ANDO, Tatsuo NAKAYAMA, Takashi INOUE, Kazuki OTA
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Patent number: 9231096Abstract: A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In1?zAlzN (0?z?1), a channel layer having a composition of: AlxGa1?xN (0?x?1) or InyGa1?yN (0?y?1). Or GaN provided on and lattice-matched to the lower barrier layer, a source electrode and a drain electrode having ohmic contact to an upper part of the semiconductor layers, disposed spaced to each other, and a gate electrode arranged via a gate insulating film in a region lying between the source electrode and the drain electrode.Type: GrantFiled: November 21, 2014Date of Patent: January 5, 2016Assignee: Renesas Electronics CorporationInventors: Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue, Kazuki Ota