Abstract: A sheet processing device sandwiches a sheet-shaped medium in a two-ply sheet in which two sheets are overlaid and partially bonded. The sheet processing device includes a separator, a conveyor, and a switching member. The separator separates the two sheets of the two-ply sheet. The conveyor is disposed downstream from the separator in a sheet conveyance direction and conveys the two-ply sheet. The switching member is disposed downstream from the conveyor in the sheet conveyance direction. The switching member switches a conveyance path of the two-ply sheet to convey the two-ply sheet to a fixing path on which fixing processing is performed on the two-ply sheet or a non-fixing path on which no fixing processing is performed on the two-ply sheet.

Abstract: An object of the present disclosure is to provide a doping method in which the status of the progress of a main reaction can be estimated in the lithium carbonate decomposition-type doping step of a nonaqueous lithium power storage element. The separation method, the doping method, and the doping apparatus according to the present disclosure include calculating a capacitor current density iC and an electrode reaction current density iR based on voltage and current of a cell that are measured during doping of the cell.

Abstract: A water electrolysis system includes: a water electrolyzer configured to electrolyze water to generate gas including oxygen and hydrogen; a gas-liquid separator configured to separate gas phase including hydrogen from liquid phase of the gas generated by the water electrolyzer; a water level detector configured to detect a water level in the gas-liquid separator; a pressure detector configured to detect a pressure of the gas phase in the gas-liquid separator; and a CPU and a memory coupled to the CPU. The CPU is configured to perform: calculating an error of the water level in the gas-liquid separator detected by the water level detector based on the pressure of the gas phase in the gas-liquid separator detected by the pressure detector.

Abstract: There is provided a transport device which transports a web-shaped substrate from a first atmosphere of a first atmosphere temperature to a second atmosphere of a second atmosphere temperature different from the first atmosphere temperature along a transport path, the transport device including a plurality of pass rollers that are disposed in the transport path and that each support the substrate, and a plurality of heaters that heat the plurality of pass rollers respectively. The plurality of heaters perform heating such that the closer a pass roller is to an upstream side of the transport path, the closer a temperature to which the pass roller is heated is to the first atmosphere temperature and the closer a pass roller is to a downstream side of the transport path, the closer a temperature to which the pass roller is heated is to the second atmosphere temperature.

Abstract: A transporting device sends a sheet with the rotation of a first drive roller with the sheet sandwiched between a first drive roller and a driven roller. The sheet is sent to a direction to which a back surface thereof is pressed against a guide surface, and is transported to a second drive roller in a state of being pressed against the guide surface after the guide surface pushing and bending a transport path toward a front surface side. A lifted amount of the sheet from the guide surface is monitored by a sensor, and the transportation is stopped in a case where the lifted amount is equal to or larger than a predetermined amount.

Abstract: An application brush for a cosmetic formula comprising: i) a base having a central axis and including a top surface that is perpendicular or substantially perpendicular to the central axis and a bottom that is spaced apart from the top surface along the central axis; and ii) a bundle of bristles that is mounted on the bottom of the base. Tips of bristles forming the bundle of bristles cooperate to define a virtual plane that is perpendicular or substantially perpendicular to the central axis, and the virtual plane has an oval shape.

Abstract: A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.

Abstract: A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.

Abstract: A water electrolysis system includes: a water electrolyzer configured to electrolyze water to generate gas including oxygen and hydrogen; a gas-liquid separator configured to separate gas phase including hydrogen from liquid phase of the gas generated by the water electrolyzer; a water level detector configured to detect a water level in the gas-liquid separator; a pressure detector configured to detect a pressure of the gas phase in the gas-liquid separator; and a CPU and a memory coupled to the CPU. The CPU is configured to perform: calculating an error of the water level in the gas-liquid separator detected by the water level detector based on the pressure of the gas phase in the gas-liquid separator detected by the pressure detector.

Abstract: There is provided a copper powder containing an organic compound containing carbon and nitrogen. The powder has a ratio of carbon content PC (mass %) to specific surface area SSA (m2/g), PC/SSA, of 0.005 to 0.1 and a ratio of nitrogen content PN (mass %) to specific surface area SSA (m2/g), PN/SSA, of 0.001 to 0.05. The organic compound preferably contains two or more of nitrogen atom per molecule and is preferably capable of forming a five-membered ring complex with copper. The organic compound preferably includes one or more of dimethyl glyoxime, ethylenediamine, and polyethyleneimine.

Abstract: A minute transistor is provided. A semiconductor device includes a semiconductor over a substrate, a first conductor and a second conductor over the semiconductor, a first insulator over the first conductor and the second conductor, a second insulator over the semiconductor, a third insulator over the second insulator, and a third conductor over the third insulator. The third insulator is in contact with a side surface of the first insulator. The semiconductor includes a first region where the semiconductor overlaps with a bottom surface of the first conductor, a second region where the semiconductor overlaps with a bottom surface of the second conductor, and a third region where the semiconductor overlaps with a bottom surface of the third conductor. The length between a top surface of the semiconductor and the bottom surface of the third conductor is longer than the length between the first region and the third region.

Abstract: A transporting device sends a sheet with the rotation of a first drive roller with the sheet sandwiched between a first drive roller and a driven roller. The sheet is sent to a direction to which a back surface thereof is pressed against a guide surface, and is transported to a second drive roller in a state of being pressed against the guide surface after the guide surface pushing and bending a transport path toward a front surface side. A lifted amount of the sheet from the guide surface is monitored by a sensor, and the transportation is stopped in a case where the lifted amount is equal to or larger than a predetermined amount.

Abstract: The present invention relates to an application brush (1) for a cosmetic formula. The application brush (1) comprises: i) a base (10) having a central axis (X) and including a top surface (100) that is perpendicular or substantially perpendicular to the central axis (X) and a bottom (110) that is spaced apart from the top surface (100) along the central axis (X); and ii) a bundle of bristles (20) that is mounted on the bottom (110) of the base (10). Tips of bristles (200) forming the bundle of bristles (20) cooperate to define a virtual plane (210) that is perpendicular or substantially perpendicular to the central axis (X), and the virtual plane (210) has an oval shape.

Abstract: A minute transistor with low parasitic capacitance, high frequency characteristics, favorable electrical characteristics, stable electrical characteristics, and low off-state current is provided. A semiconductor device includes a semiconductor over a substrate, a source and a drain over the semiconductor, a first insulator over the source and the drain, a second insulator over the semiconductor, a third insulator in contact with a side surface of the first insulator and over the second insulator, and a gate over the third insulator. The semiconductor includes a first region overlapping with the source, a second region overlapping with the drain, and a third region overlapping with the gate. The length between a top surface of the third region of the semiconductor and a bottom surface of the gate is longer than the length between the first region and the third region.

Abstract: According to an embodiment, an induction heating coil includes a heating conductor portion which is formed of a conductor member and has a zigzag shape in which a bent portion opened to one side in a first direction and a bent portion opened to the other side in the first direction are alternately continuously arranged in opposite directions along a second direction crossing the first direction.

Abstract: Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

Abstract: To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.

Abstract: The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

Abstract: There is provided a copper powder containing an organic compound containing carbon and nitrogen. The powder has a ratio of carbon content PC (mass %) to specific surface area SSA (m2/g), PC/SSA, of 0.005 to 0.1 and a ratio of nitrogen content PN (mass %) to specific surface area SSA (m2/g), PN/SSA, of 0.001 to 0.05. The organic compound preferably contains two or more of nitrogen atom per molecule and is preferably capable of forming a five-membered ring complex with copper. The organic compound preferably includes one or more of dimethyl glyoxime, ethylenediamine, and polyethyleneimine.

Abstract: A fuel cell stack includes a stacked body, a fluid manifold, a first terminal plate, a first insulator, a first end plate, a terminal electrode, and a heat pipe assembly. The first terminal plate is provided on a first end of the stacked body in a stacking direction. The first insulator is provided on the first terminal plate in the stacking direction. The first end plate is provided on the first insulator in the stacking direction. The terminal electrode is connected to the first terminal plate and protrudes from the first end plate in the stacking direction. The heat pipe assembly includes a heat receiving portion and a heat dissipation portion. The heat receiving portion is disposed in the fluid manifold to receive heat from a fluid. The heat dissipation portion is connected to the terminal electrode to release heat received at the heat receiving portion to the terminal electrode.