Abstract: The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of the polycarbodiimide-containing layer.

Abstract: The present invention provides a sheet for optical-semiconductor-element encapsulation, which comprises: an outermost resin layer A that is to be brought into contact with one or more optical semiconductor elements; a light-diffusing layer formed on the layer A and containing light-diffusing particles; and a resin layer B formed on the light-diffusing layer and having a lower refractive index than that of the layer A. Also disclosed is a process for producing an optical semiconductor device using the sheet.

Abstract: The present invention provides a light pipe for a direct-type backlight having an upper surface and a lower surface, which has: a light reflecting member provided on the upper surface; and plural light scattering members formed concentrically on at least one surface selected from the upper surface and the lower surface, wherein each of the plural light scattering members is a circular groove or a circular projection, wherein each area between respective light scattering members is substantially the same.

Abstract: A porous adhesive sheet 1 having plural through holes 2 running in about parallel with each other in the thickness direction A of an adhesive organic film 3, wherein the through holes have about congruent sections in the diameter direction from one opening 2a to the other opening 2b and a production method thereof, and a semiconductor wafer with a porous adhesive sheet 31, which includes a semiconductor wafer 32 having an electrode 33, the porous adhesive sheet 1 adhered to the semiconductor wafer, and a conductive part 34 formed by filling a through hole 2 located on the electrode 33 with a conductive material, and a production method thereof are provided.

Abstract: The invention provides a resin composition for optical use which comprises: (a) at least one member selected from the group consisting of: a polycarbodiimide represented by general formula (2): wherein R represents a diisocyanate residue, R1 represents a monoisocyanate residue, and n is an integer of 2 to 15; and a carbodiimide represented by general formula (3): R1—N?C?N—R1??(3) wherein R1 represents a monoisocyanate residue; and (b) a polycarbodiimide represented by general formula (1): wherein R represents a diisocyanate residue, R1 represents a monoisocyanate residue, and n is an integer of 20 to 200. Also disclosed are a resin sheet for obtained from the resin composition and an optical semiconductor device using the resin composition or the resin sheet.

Abstract: A polycarbodiimide copolymer which comprises at least one structural unit selected from rubber residues represented by the following formulae (1) and (2) in a number “m”: and a structural unit represented by the following formula (3) in a number “n”: and which comprises on both termini a terminal structural unit derived from a monoisocyanate, wherein m is an integer of 2 or more, n is an integer of 1 or more, m+n is from 3 to 1,500 and m/(m+n) is from 1/1,500 to ?. The polycarbodiimide is capable of keeping the inherent heat resistance and also showing excellent flexibility. Films and molding materials having high heat resistance and flexibility can be obtained.

Abstract: The present invention provides a resin composition for optical use which comprises a phenolic compound and a polycarbodiimide represented by the following general formula (1): wherein R represents a diisocyanate residue, R1 represents a monoisocyanate residue, and n is an integer of 1 to 100, wherein the phenolic compound has a substituent at at least one of the ortho positions to its phenolic hydroxyl group. Also disclosed are a resin sheet for obtained from the resin composition and an optical semiconductor device using the resin composition or the resin sheet.

Abstract: An adhesive film for underfill excellent in relaxation effect of the stress generated in the above semiconductor element and the wiring circuit board and in the connecting electrode parts and also excellent in reliability of electrical connection between the semiconductor element and the wiring circuit board.

Abstract: The present invention provides a resin for encapsulating an optical-semiconductor element, comprising a polycarbodiimide represented by the following general formula (1): wherein R represents a diisocyanate residue, provided that at least one of the n pieces of the R groups is a diisocyanate residue having the framework represented by the following structural formula (2); R1 represents a monoisocyanate residue; and n is an integer of 1 to 100.

Abstract: The present invention is to produce an aluminum nitride powder which is turned into a sintered body at a temperature of not more than 1600° C., thereby obtaining a sintered aluminum nitride in which the density and thermal conductivity are high and which can be properly used as a substrate material. Using a vapor phase reaction apparatus shown in FIG. 1, ammonia gas was fed from a reactor 2 heated at from 300 to 500° C. and maintained at that temperature by a heating section 1 via a feeding tube 4 while being regulated by a flow regulator 3. At the same time, while being regulated by the flow regulator 5, nitrogen gas containing an organic aluminum compound is fed via a feeding tube 6 to obtain an aluminum nitride powder. The aluminum nitride powder is subjected to a heat treatment at from 1100 to 1500° C. in a reducing gas atmosphere and/or an inert gas atmosphere to obtain an aggregate aluminum nitride powder.

Abstract: The present invention provides an optical semiconductor device comprising: a wiring circuit board; at least one optical semiconductor element mounted on the wiring circuit board; resin layer A that encapsulates the at least one optical semiconductor element therewith; and resin layer B interposed between the resin layer A and the wiring circuit board, and having a tensile modulus as measured at 30° C. of 0.001 to 0.4 GPa.

Abstract: The present invention provides an optical semiconductor device comprising: a wiring circuit board; at least one optical semiconductor element mounted on the wiring circuit board; resin layer A that encapsulates the at least one optical semiconductor element therewith; and resin layer B interposed between the resin layer A and the wiring circuit board, and having a tensile modulus as measured at 30° C. of 0.001 to 0.4 GPa.

Abstract: A microlens array having a resin layer forming convex lenses, wherein the resin layer comprises a cured product of a polycarbodiimide resin represented by formula: wherein R represents a diisocyanate residue; R1 represents a monoisocyanate residue; and n represents an integer of 1 to 100.

Abstract: The present invention provides A direct-type backlight having: a resin sealing member including at least one resin layer, which has a light reflecting section formed on the outermost surface of the resin sealing member; an optical semiconductor element sealed by the resin sealing member; and plural circular light scattering grooves formed concentrically on at least one surface of the resin layer, wherein an area of a circle in the center and an area among the respective concentric circles are substantially the same.

Abstract: The invention provides a sheet for optical-semiconductor element encapsulation, which has a multilayer structure comprising at least two resin layers, the resin layers comprising: (A) an outermost resin layer that is to be brought into contact with one or more optical semiconductor elements; and (B) a resin layer disposed on the layer A and having a lower refractive index than that of the layer A. Also disclosed is a process for producing an optical semiconductor device using the sheet.

Abstract: The invention provides a process for producing an optical semiconductor device, which comprises: (1) forming a resin layer on one or more optical semiconductor elements each mounted on a conductor; and (2) press-molding the resin layer formed in step (1), wherein the optical semiconductor elements each have a vertical section which is tapered from its mounting-side face toward its light emission-side face.

Abstract: The present invention provides a process for producing a circuit board having built-in electronic parts, which comprises the steps of: disposing two wiring circuit boards each having an electronic part mounted thereon so that the electronic-part-mounting sides of the respective circuit boards face each other; disposing a resin layer between the circuit boards; and press-bonding the resin layer to the circuit boards.

Abstract: A porous adhesive sheet 1 having plural through holes 2 running in about parallel with each other in the thickness direction A of an adhesive organic film 3, wherein the through holes have about congruent sections in the diameter direction from one opening 2a to the other opening 2b and a production method thereof, and a semiconductor wafer with a porous adhesive sheet 31, which includes a semiconductor wafer 32 having an electrode 33, the porous adhesive sheet 1 adhered to the semiconductor wafer, and a conductive part 34 formed by filling a through hole 2 located on the electrode 33 with a conductive material, and a production method thereof are provided.

Abstract: The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of the polycarbodiimide-containing layer.

Abstract: The present invention provides an organic electroluminescence device including an organic layer comprising an emissive layer; a pair of electrodes comprising an anode and a cathode, and sandwiching the organic layer, wherein at least one of the electrodes is transparent; a transparent layer provided adjacent to a light extracting surface of the transparent electrode; and a region substantially disturbing reflection and retraction angle of light provided adjacent to a light extracting surface of the transparent layer or in an interior of the transparent layer, wherein the transparent layer has a refractive index substantially equal to or more than the refractive index of the emissive layer.