Abstract: A semiconductor device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type on the first region, and a third silicon carbide region of a second conductivity type on the second region. Fourth and fifth silicon carbide region of the first conductivity type are on the third region. A first electrode has a first portion between the fourth region and fifth region in a first direction. A metal silicide layer is between the first portion and the third region, between the first portion and the fourth region in the first direction, and between the first portion and the fifth silicon carbide region in the first direction.

Abstract: Provided are a cold-rolled steel sheet which undergoes a small load at the time of cold-rolling, has excellent press formability and high strength, and a method of manufacturing the cold-rolled steel sheet. A hot-rolled steel sheet having the composition comprising by mass %, 0.10 to 0.30 C, 0.2 or more Mn, 0.01 or more Ni, 0.5 to 2.5 Mn+Ni, 1.2 to 9.0 Cr, and Fe and unavoidable impurities as a balance, and has a tensile strength of 1000 MPa or less is subjected to pickling and, is subjected to cold rolling at a total rolling reduction of 60% or more thus forming a cold-rolled steel sheet. A final continuous annealing treatment is performed at a soaking temperature of 750° C. or above and at a cooling rate of 3° C./s to 100° C./s so that the cold-rolled steel sheet which has a tensile strength of 1280 MPa or more, breaking elongation of 3% or more, and a thickness of 0.05 to 0.60 mm is manufactured.