Abstract: A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

Abstract: A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

Abstract: A block copolymer includes a polystyrene block including a styrene unit, and a polyalkyl (meth)acrylate block including an alkyl (meth)acrylate unit. The block copolymer includes an organic group that is bound to at least one end of a main chain of the block copolymer and that comprises a hetero atom. A polymerization initiation end of the block copolymer includes a structure derived from an alkyl lithium. The organic group included in the block copolymer includes a nitrogen atom, a sulfur atom, a phosphorus atom, a tin atom, or a combination thereof, or is represented by formula (1). R1 represents a single bond or a divalent organic group having 1 to 30 carbon atoms; and R2 represents a hydrogen atom, an aliphatic linear hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, or the like.

Abstract: A directed self-assembly composition for pattern formation, includes two or more kinds of polymers. The two or more kinds of polymers each do not have a silicon atom in a main chain thereof. At least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and having a hetero atom.

Abstract: A block copolymer includes a polystyrene block including a styrene unit, and a polyalkyl (meth)acrylate block including an alkyl (meth)acrylate unit. The block copolymer includes an organic group that is bound to at least one end of a main chain of the block copolymer and that comprises a hetero atom. A polymerization initiation end of the block copolymer includes a structure derived from an alkyl lithium. The organic group included in the block copolymer includes a nitrogen atom, a sulfur atom, a phosphorus atom, a tin atom, or a combination thereof, or is represented by formula (1). R1 represents a single bond or a divalent organic group having 1 to 30 carbon atoms; and R2 represents a hydrogen atom, an aliphatic linear hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, or the like.

Abstract: A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

Abstract: A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

Abstract: A composition for pattern formation includes a polymer or a polymer set including a plurality of polymers. The polymer or the polymer set is capable of forming a phase separation structure through directed self-assembly. The polymer or at least one polymer in the polymer set includes a crosslinkable group in a side chain thereof. A pattern-forming method includes providing a directed self-assembling film on a substrate using the composition. The directed self-assembling film includes a phase separation structure.

Abstract: A composition for pattern formation includes a polymer or a polymer set including a plurality of polymers, and an acid generator. The polymer or the polymer set is capable of forming a phase separation structure through directed self-assembly. The polymer or at least one polymer in the polymer set includes an acid-labile group in a side chain thereof. The acid generator generates an acid upon application of energy. A pattern-forming method includes providing a directed self-assembling film on a substrate using the composition. The directed self-assembling film includes a phase separation structure.

Abstract: A composition for pattern formation includes a block copolymer that includes a block represented by formula (I) and a block represented by formula (II). R1 and R3 each independently represent a hydrogen atom, a methyl group, a fluorine atom or a trifluoromethyl group. R2 represents a monovalent organic group. R4 represents a hydrocarbon group having a valency of (1+b) and having 1 to 5 carbon atoms. R5 represents a monovalent group having a hetero atom. m and n are each independently an integer of 10 to 5,000. a is an integer of 0 to 5. b is an integer of 1 to 3.

Abstract: A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

Abstract: A directed self-assembly composition for pattern formation, includes two or more kinds of polymers. The two or more kinds of polymers each do not have a silicon atom in a main chain thereof. At least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and having a hetero atom.

Abstract: A cleaning composition for semiconductor components comprises a water-soluble polymer (a) having a specific molecular weight and a compound (b) represented by the following formula (1): NR4OH??(1) wherein each R is independently a hydrogen atom or an alkyl group of 1 to 6 carbon atoms. A process for manufacturing a semiconductor device comprises chemical mechanical polishing a semiconductor component, and cleaning the semiconductor component with the cleaning composition for semiconductor components. The cleaning composition exerts a high cleaning effect on impurities remaining on a polished surface of a semiconductor component after chemical mechanical polishing, and becomes little burden on the environment.