Abstract: There is provided a cell recovery method for recovering cells which are cultured in at least one container containing a liquid medium and adhere to an inner surface of the container, the method including performing: a medium discharge step of discharging the liquid medium from the container; a peeling liquid supply step of supplying a peeling liquid for peeling the cells from the inner surface of the container to the container; a peeling liquid discharge step of discharging the peeling liquid from the container before the cells are completely peeled from the inner surface of the container; a waiting step of waiting until the cells are peeled by action of a residual peeling liquid; and a recovery liquid supply step of supplying a recovery liquid for recovering the cells to the container.

Abstract: There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0?x?1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.

Abstract: A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

Abstract: A robot arm apparatus includes an arm mechanism including a base member and a link pivotally connected to the base member for pivotal motion in a horizontal plane through a rotational shaft. The link holds a regular circular transport object at its distal end. The apparatus also includes an edge detector, provided on the base member, that detects two edges of the regular circular transport object as the link pivotally rotates with respect to the base member, a pivotal angle detector that detects a pivotal angle of the link with respect to the base member, and a center position calculator that calculates a center position of the regular circular transport object with respect to the link. The calculation is based on two pivotal angles detected by the pivotal angle detector when the edge detector detects the two edges of the regular circular transport object.

Abstract: Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0<x1?1, 0?y1?1), the second semiconductor crystal layer is made of Inx2Ga1-x2Asy2P1-y2 (0?x2?1, 0?y2?1, y2?y1), and the electron affinity Ea1 of the first semiconductor crystal layer is lower than the electron affinity Ea2 of the second semiconductor crystal layer.

Abstract: A clamping device comprising: a distal end side stationary blocks which are provided on a side of a distal end of a workpiece retaining base, and in which stationary tilt faces tilting downwardly to a central direction of the workpiece are formed; a proximal end side stationary blocks which are provided on a side of a proximal end of the workpiece retaining base, and in which upward stationary tilt faces tilting downward toward the central direction of the workpiece are formed; and a movable block which is arranged at a position proximal to the proximal end side stationary blocks, and is capable of advancing to or retracting from a side of the distal end side stationary blocks with the workpiece being held between the blocks, and in which a downward movable tilt face tilting upwardly toward the central direction of the workpiece is formed.

Abstract: A clamping device comprising: a distal end side stationary blocks which are provided on a side of a distal end of a workpiece retaining base, and in which stationary tilt faces tilting downwardly to a central direction of the workpiece are formed; a proximal end side stationary blocks which are provided on a side of a proximal end of the workpiece retaining base, and in which upward stationary tilt faces tilting downward toward the central direction of the workpiece are formed and a movable block which is arranged at a position proximal to the proximal end side stationary blocks, and is capable of advancing to or retracting from a side of the distal end side stationary blocks with the workpiece being held between the blocks, and in which a downward movable tilt face tilting upwardly toward the central direction of the workpiece is formed.

Abstract: There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0?x?1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.

Abstract: There is provided a semiconductor device including a first channel-type first MISFET formed and a second channel-type second MISFET: a first source and a first drain of the first MISFET and a second source and a second drain of the second MISFET are made of the same conductive substance, and the work function ?M of the conductive substance satisfies at least one of relations respectively represented by (1) ?1<?M<?2+Eg2, and (2) |?M??1|?0.1 eV and |(?2+Eg2)??M|?0.1 eV, where ?1 represents an electron affinity of an N-type semiconductor crystal layer, and ?2 and Eg2 represent an electron affinity and a band gap of a crystal of a P-type semiconductor crystal layer.

Abstract: A robot arm apparatus includes an arm mechanism including a base member and a link pivotally connected to the base member for pivotal motion in a horizontal plane through a rotational shaft. The link holds a regular circular transport object at its distal end. The apparatus also includes an edge detector, provided on the base member, that detects two edges of the regular circular transport object as the link pivotally rotates with respect to the base member, a pivotal angle detector that detects a pivotal angle of the link with respect to the base member, and a center position calculator that calculates a center position of the regular circular transport object with respect to the link. The calculation is based on two pivotal angles detected by the pivotal angle detector when the edge detector detects the two edges of the regular circular transport object.

Abstract: Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0<x1?1, 0?y1?1), the second semiconductor crystal layer is made of Inx2Ga1-x2Asy2P1-y2 (0?x2?1, 0?y2?1, y2?y1), and the electron affinity Ea1 of the first semiconductor crystal layer is lower than the electron affinity Ea2 of the second semiconductor crystal layer.

Abstract: A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

Abstract: An insulation degradation diagnostic device (1a) comprises a current transformer (7a), a first amplifier (15), a first high-pass filter (17), a low-pass filter (19), a second amplifier (20), a second high-pass filter (21), and a discharge judgement section (30). The current transformer (7a) has a filtering function, with an amount of attenuation of ?60 dB or less and a slope characteristic of ?5 dB/oct or less at a commercial frequency and detects a current flowing through a grounding conductor (5). The first amplifier (15) amplifies a current signal from the current transformer (7a). The first high-pass filter (17) removes a low frequency component from an amplified current signal. The low-pass filter (19) removes a high frequency component from a current signal from which the low frequency component has been removed. The second amplifier (20) amplifies a current signal from the low-pass filter (19) to a predetermined level.

Abstract: An insulation degradation diagnostic device (1a) comprises a current transformer (7a), a first amplifier (15), a first high-pass filter (17), a low-pass filter (19), a second amplifier (20), a second high-pass filter (21), and a discharge judgment section (30). The current transformer (7a) has a filtering function with an amount of attenuation of ?60 dB or less and a slope characteristic of ?5 dB/oct or less at a commercial frequency and detects a current flowing through a grounding conductor (5). The first amplifier (15) amplifies a current signal from the current transformer (7a). The first high-pass filter (17) removes a low frequency component from an amplified current signal. The low-pass filter (19) removes a high frequency component from a current signal from which the low frequency component has been removed. The second amplifier (20) amplifies a current signal from the low-pass filter (19) to a predetermined level.

Abstract: Alkyl (or aralkyl) .alpha.-isocyanoacetate is condensed with a trihalogenoacetic aldehyde or its hydrate in the presence of an amine to give trans-4-alkoxycarbonyl(or aralkyloxycarbonyl)-5-trihalogenomethyl-2-oxazoline. The oxazoline compound is hydrolyzed under acidic conditions to give threo-.gamma.,.gamma.,.gamma.-trihalogenothreonine, which is then subjected to catalytic or electrolytic reduction. The above-mentioned reactions can be carried out stereoselectively and threo-threonine is thereby obtained without by-products such as allo-threonine.