Patents by Inventor Yuka Hayami
Yuka Hayami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080283924Abstract: The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.Type: ApplicationFiled: November 28, 2007Publication date: November 20, 2008Applicant: FUJITSU LIMITEDInventors: Takashi Saiki, Katsuaki Okoshi, Yuka Hayami
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Patent number: 7319066Abstract: The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.Type: GrantFiled: October 27, 2004Date of Patent: January 15, 2008Assignee: Fujitsu LimitedInventors: Takashi Saiki, Katsuaki Okoshi, Yuka Hayami
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Patent number: 7294577Abstract: There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.Type: GrantFiled: March 24, 2005Date of Patent: November 13, 2007Assignee: Fujitsu LimitedInventors: Junji Oh, Yuka Hayami, Ryou Nakamura
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Patent number: 7030026Abstract: The semiconductor device fabrication method comprises the step of forming electrodes 20 in a first element region 14n and in a second element region 14p; the step of forming a first resist film 22 which is opened in the first element region 14n; the step of forming a first dopant diffused region 28 with the first resist film 22 and the gate electrode 20 as a mask; the first ashing processing step of ashing the first resist film 22; the step of forming a sidewall insulation film 42 over the side wall of the gate electrode 20; the step of forming a second resist film 44 which is opened in the first element region 14n; the forming a second dopant diffused region 48 with the second resist film 44, the gate electrode 20 and the sidewall insulation film 42 as a mask; and the second ashing processing step for ashing the second resist film 44. The ashing processing period of time in the first ashing processing step is shorter than the ashing processing period of time in the second ashing processing step.Type: GrantFiled: October 30, 2003Date of Patent: April 18, 2006Assignee: Fujitsu LimitedInventors: Yuka Hayami, Junji Oh, Takashi Saiki, Masataka Kase
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Publication number: 20050275108Abstract: The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the back surface of the silicon wafer 10 and is an insulation film having a tensile stress, relaxing a stress exerted to the silicon wafer 10 by the inter-layer insulation films in which the multilayer interconnection 12 is buried.Type: ApplicationFiled: October 27, 2004Publication date: December 15, 2005Applicant: FUJITSU LIMITEDInventors: Takashi Saiki, Katsuaki Okoshi, Yuka Hayami
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Publication number: 20050215003Abstract: There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being formed to have a line width of 50 nm or less; removing the oxide film from the semiconductor surface; drying the semiconductor surface without using an organic solvent; and forming a silicide layer on the semiconductor surface after drying the semiconductor surface.Type: ApplicationFiled: March 24, 2005Publication date: September 29, 2005Applicant: FUJITSU LIMITEDInventors: Junji Oh, Yuka Hayami, Ryou Nakamura
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Publication number: 20040102047Abstract: The semiconductor device fabrication method comprises the step of forming electrodes 20 in a first element region 14n and in a second element region 14p; the step of forming a first resist film 22 which is opened in the first element region 14n; the step of forming a first dopant diffused region 28 with the first resist film 22 and the gate electrode 20 as a mask; the first ashing processing step of ashing the first resist film 22; the step of forming a sidewall insulation film 42 over the side wall of the gate electrode 20; the step of forming a second resist film 44 which is opened in the first element region 14n; the forming a second dopant diffused region 48 with the second resist film 44, the gate electrode 20 and the sidewall insulation film 42 as a mask; and the second ashing processing step for ashing the second resist film 44. The ashing processing period of time in the first ashing processing step is shorter than the ashing processing period of time in the second ashing processing step.Type: ApplicationFiled: October 30, 2003Publication date: May 27, 2004Applicant: FUJITSU LIMITEDInventors: Yuka Hayami, Junji Oh, Takashi Saiki, Masataka Kase
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Patent number: 5927302Abstract: A plate-shaped article is immersed in a cleaning liquid filling a cleaning bath having an overflowing surface through which the cleaning liquid flows out, and is rinsed out. In the cleaning bath, streams mostly being directed away from a predetermined plane approximately perpendicular to the overflowing surface are formed. The plate-shaped article is then brought into the cleaning liquid having the stream maintaining a state where the plate-shaped article intersects the predetermined plane and the surfaces of the plate-shaped article are in approximately parallel to the streams mostly being directed away from the predetermined plane on the surface of the cleaning liquid.Type: GrantFiled: September 14, 1995Date of Patent: July 27, 1999Assignee: Fujitsu LimitedInventors: Yuka Hayami, Masanori Kobayashi, Ken Yamazaki
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Patent number: 5795494Abstract: Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.Type: GrantFiled: August 10, 1995Date of Patent: August 18, 1998Assignee: Fujitsu LimitedInventors: Yuka Hayami, Miki T. Suzuki, Hiroki Ogawa, Shuzo Fujimura, Haruhisa Mori, Yoshiko Okui
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Patent number: 5474616Abstract: A plate-shaped article is immersed in a cleaning liquid filling a cleaning bath having an overflowing surface through which the cleaning liquid flows out, and is rinsed out. In the cleaning bath, streams mostly being directed away from a predetermined plane approximately perpendicular to the overflowing surface are formed. The plate-shaped article is then brought into the cleaning liquid having the stream maintaining a state where the plate-shaped article intersects the predetermined plane and the surfaces of the plate-shaped article are in approximately parallel to the streams mostly being directed away from the predetermined plane on the surface of the cleaning liquid.Type: GrantFiled: April 6, 1993Date of Patent: December 12, 1995Assignee: Fujitsu LimitedInventors: Yuka Hayami, Masanori Kobayashi, Ken Yamazaki