Abstract: An organic EL device including a first barrier film that contains primarily silicon nitride, a second barrier film that contains primarily silicon nitride, an organic EL element that is disposed between the first barrier film and the second barrier film, a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween, a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween, and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride.

Abstract: An organic EL device including a first barrier film that contains primarily silicon nitride, a second barrier film that contains primarily silicon nitride, an organic EL element that is disposed between the first barrier film and the second barrier film, a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween, a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween, and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride.

Abstract: An organic EL device including a first barrier film that contains primarily silicon nitride, a second barrier film that contains primarily silicon nitride, an organic EL element that is disposed between the first barrier film and the second barrier film, a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween, a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween, and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride.

Abstract: An organic EL device including a first barrier film that contains primarily silicon nitride, a second barrier film that contains primarily silicon nitride, an organic EL element that is disposed between the first barrier film and the second barrier film, a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween, a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween, and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride.

Abstract: An organic EL device including a first barrier film that contains primarily silicon nitride, a second barrier film that contains primarily silicon nitride, an organic EL element that is disposed between the first barrier film and the second barrier film, a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween, a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween, and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride.

Abstract: An organic EL device including a first barrier film that contains primarily silicon nitride, a second barrier film that contains primarily silicon nitride, an organic EL element that is disposed between the first barrier film and the second barrier film, a first flexible substrate that is disposed opposite the organic EL element with the first barrier film interposed therebetween, a second flexible substrate that is disposed opposite the organic EL element with the second barrier film interposed therebetween, and a third barrier film that is disposed between the second barrier film and the organic EL element, and contains primarily silicon nitride.

Abstract: A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×1022 atoms/cm3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration.

Abstract: A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×1022 atoms/cm3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration.

Abstract: A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×1022 atoms/cm3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration.

Abstract: A method for fabricating an intermediate member of an electronic element, comprises: preparing a glass substrate as a support substrate having a first surface; forming a first inorganic film that contains silicon and has a second surface and a third surface opposite to the second surface, in such a manner that the first surface of the support substrate is in contact with the second surface of the first inorganic film; forming a first polyimide film containing fluorine on the third surface of the first inorganic film; and forming a second inorganic film containing silicon on the first polyimide film.

Abstract: A method for fabricating an intermediate member of an electronic element, comprises: preparing a glass substrate as a support substrate having a first surface; forming a first inorganic film that contains silicon and has a second surface and a third surface opposite to the second surface, in such a manner that the first surface of the support substrate is in contact with the second surface of the first inorganic film; forming a first polyimide film containing fluorine on the third surface of the first inorganic film; and forming a second inorganic film containing silicon on the first polyimide film.

Abstract: A barrier film that contains primarily silicon nitride has a total hydrogen concentration of 3×1022 atoms/cm3 or higher and a silicon-bonded hydrogen concentration proportion of 40% or higher, the total hydrogen concentration indicating a total of a concentration of hydrogen bonded to silicon and a concentration of hydrogen bonded to nitrogen, and the silicon-bonded hydrogen concentration proportion indicating a proportion of the concentration of hydrogen bonded to silicon to the total hydrogen concentration.