Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

Abstract: An IGBT region (2) and a diode region (3) are provided on a semiconductor substrate (1) and have an emitter electrode (16) on a surface of the semiconductor substrate (1). A sense IGBT region (4) is provided on the semiconductor substrate (1), has a smaller area than that of the IGBT region (2), and includes a sense emitter electrode (20) provided on the surface of the semiconductor substrate (1) and separated from the emitter electrode (16). A sense diode region (3) is provided on the semiconductor substrate (1), has a smaller area than that of the diode region (3), and includes a sense anode electrode provided on the surface of the semiconductor substrate (1) and separated from the emitter electrode (16). The sense diode region (3) is separated from the IGBT region (2) by a distance equal to or greater than that of the drift layer (8).

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

Abstract: An idling-stop control apparatus includes an idling-stop controller and an auxiliary-machine controller. The idling-stop controller is configured to automatically stop an engine to cause the engine to be in a state in which idling is stopped in a case where a predetermined condition for stopping idling is satisfied and configured to automatically restart the engine in a case where a predetermined condition for restarting the engine is satisfied. The auxiliary-machine controller is configured to control a drive state of an auxiliary machine that is to be driven by the engine. The auxiliary-machine controller is configured to control the drive state of the auxiliary machine that is driven by the engine such that, in a case where the engine is automatically restarted from the state in which idling is stopped by the idling-stop controller, a time differential value of an engine speed of the engine is constant.

Abstract: An information processing apparatus according to one embodiment includes one or more hardware processors coupled to a memory. The one or more hardware processors acquires pieces of target data of different types. The one or more hardware processors generates element information for each element included in the pieces of the target data. The element information indicates the corresponding element. The one or more hardware processors links, with each other, related pieces of the element information and stores the linked pieces of the element information in a storage device.

Abstract: A semiconductor device includes: a semiconductor substrate; an upper surface electrode formed on an upper surface side of the semiconductor substrate; an insulating film formed on the upper surface side of the semiconductor substrate; and a lower surface electrode formed on a lower surface side of the semiconductor substrate and having a larger area than that of the upper surface electrode, wherein the upper surface electrode and the lower surface electrode are electrodes having a compressive stress.

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

Abstract: An idling-stop control apparatus includes an idling-stop controller and an auxiliary-machine controller. The idling-stop controller is configured to automatically stop an engine to cause the engine to be in a state in which idling is stopped in a case where a predetermined condition for stopping idling is satisfied and configured to automatically restart the engine in a case where a predetermined condition for restarting the engine is satisfied. The auxiliary-machine controller is configured to control a drive state of an auxiliary machine that is to be driven by the engine. The auxiliary-machine controller is configured to control the drive state of the auxiliary machine that is driven by the engine such that, in a case where the engine is automatically restarted from the state in which idling is stopped by the idling-stop controller, a time differential value of an engine speed of the engine is constant.

Abstract: An object is to provide a semiconductor device that can prevent increase in the package size and detect a current with high precision by suppressing a current induced by magnetic flux. A semiconductor device 1 is connectable to a control board 100 detecting a current flowing through an IGBT 3 included in the semiconductor device 1 and functioning as a semiconductor element. The semiconductor device 1 includes an insulating substrate, the IGBT 3, and a sense resistor 4. The IGBT 3 is disposed on the insulating substrate 2, and includes a sense electrode and an emitter electrode. The sense resistor 4 is disposed on the insulating substrate 2, and has one end connected to the sense electrode and the other end connected to the emitter electrode. The control board 100 detects a potential difference between both ends of the sense resistor 4 to detect the current flowing through the IGBT 3.

Abstract: A semiconductor apparatus includes a metal body in which a through hole is formed, a socket that covers the metal body without closing the through hole, a connection terminal connected to the metal body and exposed to an outside of the socket, a control board having a metal pattern and a circuit pattern, and a semiconductor chip having a control terminal connected to the circuit pattern via the through hole without being in contact with the metal body, the connection terminal being connected to the metal pattern.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes an oxide in a channel formation region; the semiconductor device includes a first transistor, a second transistor, a first wiring, a second wiring, and a third wiring, and the first transistor includes the oxide over a first insulator, a second insulator over the oxide, a first conductor over the second insulator, a third insulator over the first conductor, and a fourth insulator in contact with the second insulator, the first conductor, and the third insulator. The second transistor includes the oxide over a fifth insulator, a sixth insulator over the oxide, a second conductor over the sixth insulator, a seventh insulator over the second conductor, and an eighth insulator in contact with the sixth insulator, the second conductor, and the seventh insulator.

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

Abstract: An object is to provide a semiconductor device that can prevent increase in the package size and detect a current with high precision by suppressing a current induced by magnetic flux. A semiconductor device is connectable to a control board detecting a current flowing through an IGBT included in the semiconductor device and functioning as a semiconductor element. The semiconductor device includes an insulating substrate, the IGBT, and a sense resistor. The IGBT is disposed on the insulating substrate, and includes a sense electrode and an emitter electrode. The sense resistor is disposed on the insulating substrate, and has one end connected to the sense electrode and the other end connected to the emitter electrode. The control board detects a potential difference between both ends of the sense resistor to detect the current flowing through the IGBT.

Abstract: A semiconductor apparatus includes a metal body in which a through hole is formed, a socket that covers the metal body without closing the through hole, a connection terminal connected to the metal body and exposed to an outside of the socket, a control board having a metal pattern and a circuit pattern, and a semiconductor chip having a control terminal connected to the circuit pattern via the through hole without being in contact with the metal body, the connection terminal being connected to the metal pattern.

Abstract: The mold device according to the present invention is a mold device to resin-seal the semiconductor device including an insert electrode, and in the semiconductor device, the insert electrode is provided with an insert hole, a nut having a screw hole is disposed in the insert electrode so that the insert hole and the screw hole communicate with each other, the mold device includes a mold body into which resin is injected to resin-seal the semiconductor device, including a side of the insert electrode where the nut is disposed, and a rod-like member that is inserted into the insert hole, and the rod-like member is inserted into the screw hole of the nut through the insert hole of the insert electrode to draw the nut to the side of the insert electrode.

Abstract: A semiconductor device includes a semiconductor module having a semiconductor element, a radiator plate which is connected to the semiconductor element and which has at least one radiator plate through hole formed therein, and resin covering the semiconductor element and the radiator plate with a lower surface of the radiator plate exposed, a cooler, first insulating grease provided between the lower surface of the radiator plate and the cooler to thermally connect the radiator plate and the cooler, and second insulating grease provided in the at least one radiator plate through hole to be connected to the first insulating grease.

Abstract: A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.

Abstract: It is an object of the present invention to provide a semiconductor device that has sufficient insulation properties between a screw and a heat dissipation plate, and is smaller and less costly. A semiconductor device of the present invention includes the following: a housing containing a semiconductor element; a heat dissipation plate disposed on a bottom surface of the housing, and provided to partly extend beyond the housing to reach the outside; an electrode electrically connected to the semiconductor element, and provided to partly protrude from the housing to the outside in parallel with the heat dissipation plate; and a screw with which an exposed portion of the electrode, protruding from the housing is joined to a busbar. The heat dissipation plate has a thickness lack portion in a location of the heat dissipation plate, the location at least facing the screw, the location being on a screw side.

Abstract: The overhanging storage mechanism for a jib is provided with: a guide roller (31) provided to a jib (15); a guide (32) provided to a base end boom (14a); a jib-fixing pin (43) provided to the base end boom (14a); and a pin socket (45) that is provided to the jib (15) and that comprises insertion holes (48), (49). The jib-fixing pin (43) and the insertion holes (48), (49) are arranged so that the jib-fixing pin (43) is inserted in the insertion hole (48) when the jib (15) moves along the base end boom (14a) together with contraction of a boom (14). The inner dimensions of a front end opening (48) are larger than the outer dimensions of the jib-fixing pin (43). It is thus possible to absorb positional displacement between the jib-fixing pin (43) and the insertion hole (48).

Abstract: The overhanging storage mechanism for a jib is provided with: a guide roller (31) and a pin socket (45) that are provided to a jib (15); and a guide (32) and a jib-fixing pin (43) that are provided to a base end boom (14a). The guide (32) comprises a first raceway surface (34s) that pulls the jib (15) toward the bottom surface of the base end boom (14a) as a result of rolling of the guide roller (31), a second raceway surface (35s) on which the jib (15) moves along the base end boom (14a), and a protruding third raceway surface (36s) that protrudes from the second raceway surface (35s). The jib (15) is pulled further toward the bottom surface of the base end boom (14a) by rolling of the guide roller (31) on the third raceway surface (36s).