Abstract: An antenna device (10) includes a substrate (100) including a first surface (102), a first antenna (200) provided on the substrate (100), a second antenna (300) provided on the substrate (100), and a third antenna (400) provided on the first surface (102) of the substrate (100), and a center point (CP) of the third antenna (400) is positioned on the same side as an end portion (EP2) of the second antenna (300) furthest from the first antenna (200), relative to a center line (CL) passing through a center of a line (L) connecting an end portion (EP1) of the first antenna (200) furthest from the second antenna (300) and the end portion (EP2) of the second antenna (300) furthest from the first antenna (200), or relative to a center line (CL) of the first surface (102) of the substrate (100).

Abstract: A fixing unit or device that can be used in an image forming apparatus includes a first heater element that is formed of a material that increases in electrical resistance with increases in temperature. A controller of the fixing unit is configured to vary a duty ratio of electric power applied to the first heater element during a start-up operation in which the temperature of the first heater element is raised to a target operating temperature. By varying the duty ratio during the start-up operation, changes in the resistance of the first heater element with the heating can be compensated. For example, the duty ratio can be increased during the course of the start-up to achieve the target operating temperature faster.

Abstract: An antenna device (10) includes a substrate (100) including a first surface (102), a first antenna (200) provided on the substrate (100), a second antenna (300) provided on the substrate (100), and a third antenna (400) provided on the first surface (102) of the substrate (100), and a center point (CP) of the third antenna (400) is positioned on the same side as an end portion (EP2) of the second antenna (300) furthest from the first antenna (200), relative to a center line (CL) passing through a center of a line (L) connecting an end portion (EP1) of the first antenna (200) furthest from the second antenna (300) and the end portion (EP2) of the second antenna (300) furthest from the first antenna (200), or relative to a center line (CL) of the first surface (102) of the substrate (100).

Abstract: A manipulator includes an elongated portion; a bending portion coupled to a distal end of the elongated portion, the bending portion being formed by articulating a plurality of segment pieces; an end effector coupled to a distal end of the bending portion; an actuator coupled to a proximal end of the elongated portion; a first wire coupled to between the actuator and the end effector, the first wire being configured to actuate the end effector; and a second wire coupled to between the actuator and the bending portion, the second wire being configured to actuate the bending portion. Each of the plurality of segment pieces is configured to be articulated so as to be twisted with respect to a longitudinal central axis of the bending portion, and the first wire is configured to be inserted into the plurality of segment pieces so as to form a substantially twisted path.

Abstract: A distance measuring system includes a light source unit that emits infrared light toward a target object, a light receiving unit that receives the infrared light from the target object, and an arithmetic processing unit that obtains information regarding a distance to the target object on the basis of data from the light receiving unit, in which an optical member including a bandpass filter that is selectively transparent to infrared light in a predetermined wavelength range is arranged on a light receiving surface side of the light receiving unit, and the bandpass filter has a concave-shaped light incident surface.

Abstract: An antenna device to be mounted on a vehicle, including a ground conductor having a planar shape; and an antenna element which is a resonant type, is provided at a position so as not to overlap with the ground conductor within a plane substantially parallel to the ground conductor, and is configured to transmit or receive a polarized wave parallel to the ground conductor. A rectangular notch is formed in the ground conductor to have both a right and left edge portions with a predetermined width being left, and the antenna element is provided at a position overlapping with the notch in a plane substantially parallel to the ground conductor.

Abstract: Embodiments are disclosed that reduce gouging during multi-patterning processes using thermal decomposition materials. For one embodiment, gouging is reduced or suppressed by using thermal decomposition materials as cores during multiple patterning processes. For one embodiment, gouging is reduced or suppressed by using thermal decomposition materials as a gap fill material during multiple patterning processes. By using thermal decomposition material, gouging of an underlying layer, such as a hard mask layer, can be reduced or suppressed for patterned structures being formed using the self-aligned multi-patterning processes because more destructive etch processes, such as plasma etch processes, are not required to remove the thermal decomposition materials.

Abstract: Embodiments are disclosed that improve etch uniformity during multi-patterning processes for the manufacture of microelectronic workpieces by reshaping spacers using thermal decomposition materials as a protective layer. Because the thermal decomposition material can be removed through thermal treatment processes without requiring etch processes, spacers can be reshaped with no spacer profile change or damage while suppressing undesired gouging differences in underlying layers and related degradation in etch uniformity.

Abstract: A process is provided in which a patterned layer, an intervening layer and a first layer to be etched according to the pattern of the patterned layer are formed. The intervening layer may be a thermal decomposition layer that may be removed by a heat based removal process. After etching the first layer, the use of a heat based removal process may allow the intervening layer to be removed from the substrate without altering the first layer. In one embodiment, the first layer may be a memorization layer and the process may be a multiple patterning process.

Abstract: A manipulator is used to operate a surgical device that treats a body tissue. The manipulator includes a drive mechanism having a stationary section to be attached on a housing of a drive unit containing with at least one motor. A movable part is supported rotatably about a predetermined axis on the stationary section and having a connecting portion configured to be connected to the at least one motor when the stationary section is attached on the housing. A cover is configured to seal a gap between the movable part and the stationary section so as to prevent fluid from entering the gap between the movable part and the stationary part. A power transmission member is connected to both the movable part and the surgical device to transmit power from the motor to the surgical device.

Abstract: A distance measuring system includes a light source unit that emits infrared light toward a target object, a light receiving unit that receives the infrared light from the target object, and an arithmetic processing unit that obtains information regarding a distance to the target object on the basis of data from the light receiving unit, in which an optical member including a bandpass filter that is selectively transparent to infrared light in a predetermined wavelength range is arranged on a light receiving surface side of the light receiving unit, and the bandpass filter has a concave-shaped light incident surface.

Abstract: Self-aligned interconnect patterning for back-end-of-line (BEOL) structures is described. A method of fabricating an interconnect structure for an integrated circuit includes depositing a first metal layer on an initial interconnect structure, forming a patterned spacer layer containing recessed features on the first metal layer, and etching a self-aligned via in the first metal layer and into the initial interconnect structure using a recessed feature in the patterned spacer layer as a mask. The method further includes filling the via in the first metal layer and the recessed features in the patterned spacer layer with a second metal layer, removing the patterned spacer layer, and etching a recessed feature in the first metal layer using the second metal layer as a mask.

Abstract: A process is provided in which low-k layers are protected from damage by the use of thermal decomposition materials. In one embodiment, the low-k layers may be low-k dielectric layers utilized in BEOL process steps. The thermal decomposition materials may be utilized to replace organic layers that typically require ashing processes to remove. By removing the need for certain ashing steps, the exposure of the low-k dielectric layer to ashing processes may be lessened. In another embodiment, the low-k layers may be protected by plugging openings in the low-k layer with the thermal decomposition material before a subsequent process step that may damage the low-k layer is performed. The thermal decomposition materials may be removed by a thermal anneal process step that does not damage the low-k layers.

Abstract: A manipulator includes an elongated portion; a bending portion coupled to a distal end of the elongated portion, the bending portion being formed by articulating a plurality of segment pieces; an end effector coupled to a distal end of the bending portion; an actuator coupled to a proximal end of the elongated portion; a first wire coupled to between the actuator and the end effector, the first wire being configured to actuate the end effector; and a second wire coupled to between the actuator and the bending portion, the second wire being configured to actuate the bending portion. Each of the plurality of segment pieces is configured to be articulated so as to be twisted with respect to a longitudinal central axis of the bending portion, and the first wire is configured to be inserted into the plurality of segment pieces so as to form a substantially twisted path.

Abstract: A process is provided in which a patterned layer, an intervening layer and a first layer to be etched according to the pattern of the patterned layer are formed. The intervening layer may be a thermal decomposition layer that may be removed by a heat based removal process. After etching the first layer, the use of a heat based removal process may allow the intervening layer to be removed from the substrate without altering the first layer. In one embodiment, the first layer may be a memorization layer and the process may be a multiple patterning process.

Abstract: Embodiments are disclosed that reduce gouging during multi-patterning processes using thermal decomposition materials. For one embodiment, gouging is reduced or suppressed by using thermal decomposition materials as cores during multiple patterning processes. For one embodiment, gouging is reduced or suppressed by using thermal decomposition materials as a gap fill material during multiple patterning processes. By using thermal decomposition material, gouging of an underlying layer, such as a hard mask layer, can be reduced or suppressed for patterned structures being formed using the self-aligned multi-patterning processes because more destructive etch processes, such as plasma etch processes, are not required to remove the thermal decomposition materials.

Abstract: Embodiments are disclosed that improve etch uniformity during multi-patterning processes for the manufacture of microelectronic workpieces by reshaping spacers using thermal decomposition materials as a protective layer. Because the thermal decomposition material can be removed through thermal treatment processes without requiring etch processes, spacers can be reshaped with no spacer profile change or damage while suppressing undesired gouging differences in underlying layers and related degradation in etch uniformity.

Abstract: A process is provided in which low-k layers are protected from damage caused by exposure to atmospheric conditions by providing protection through the use of thermal decomposition materials. In one embodiment, the low-k layers may be low-k dielectric layers utilized in BEOL process steps. The thermal decomposition materials may be utilized to coat exposed regions of the low-k layers so that the low-k layers are not exposed to atmospheric conditions. In an exemplary embodiment, the low-k layers may be protected by plugging openings in the low-k layer with the thermal decomposition material. In another exemplary embodiment, trench and via openings in the low-k layer are plugged with the thermal decomposition material. The thermal decomposition materials may be removed by a heat based thermal anneal process step that does not damage the low-k layers.

Abstract: A process is provided in which low-k layers are protected from damage by the use of thermal decomposition materials. In one embodiment, the low-k layers may be low-k dielectric layers utilized in BEOL process steps. The thermal decomposition materials may be utilized to replace organic layers that typically require ashing processes to remove. By removing the need for certain ashing steps, the exposure of the low-k dielectric layer to ashing processes may be lessened. In another embodiment, the low-k layers may be protected by plugging openings in the low-k layer with the thermal decomposition material before a subsequent process step that may damage the low-k layer is performed. The thermal decomposition materials may be removed by a thermal anneal process step that does not damage the low-k layers.

Abstract: Self-aligned interconnect patterning for back-end-of-line (BEOL) structures is described. A method of fabricating an interconnect structure for an integrated circuit includes depositing a first metal layer on an initial interconnect structure, forming a patterned spacer layer containing recessed features on the first metal layer, and etching a self-aligned via in the first metal layer and into the initial interconnect structure using a recessed feature in the patterned spacer layer as a mask. The method further includes filling the via in the first metal layer and the recessed features in the patterned spacer layer with a second metal layer, removing the patterned spacer layer, and etching a recessed feature in the first metal layer using the second metal layer as a mask.